Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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DMP2110UVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 22 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 20V | 740mW Ta | 2 P-Channel (Dual) | 443pF @ 6V | 150m Ω @ 2.8A, 4.5V | 1V @ 250μA | 1.8A Ta | 6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N15AFE,LM | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 16 Weeks | 150mW | SSM6N15 | 100mA | 30V | 150mW | 2 N-Channel (Dual) | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN65D8LDWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | 15 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NX6020CAKSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ROHS3 Compliant | /files/nexperiausainc-nx6020caksx-datasheets-2131.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 60V 50V | 330mW | N and P-Channel | 17pF @ 10V 36pF @ 25V | 4.5 Ω @ 100mA, 10V, 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 170mA Ta | 0.43nC @ 4.5V, 0.35nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC2990UDJQ-7 | Diodes Incorporated | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmc2990udjq7-datasheets-2093.pdf | SOT-963 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 350mW Ta | N and P-Channel Complementary | 27.6pF @ 15V 28.7pF @ 15V | 990m Ω @ 100mA, 4.5V, 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 450mA Ta 310mA Ta | 0.5nC @ 4.5V, 0.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
DMP2900UW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC2710UV-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmc2710uv13-datasheets-2095.pdf | SOT-563, SOT-666 | 6 | 24 Weeks | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 0.8W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 460mW Ta | 1.1A | 0.4Ohm | N and P-Channel Complementary | 42pF 49pF @ 16V | 400m Ω @ 600mA, 4.5V, 700m Ω @ 430mA, 4.5V | 1V @ 250μA | 1.1A Ta 800mA Ta | 600pC, 700pC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||
SIZF906ADT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf906adtt1ge3-datasheets-2038.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 4.5W Ta 38W Tc 5W Ta 83W Tc | 2 N-Channel (Dual), Schottky | 2000pF @ 15V 8200pF @ 15V | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V | 2.2V @ 250μA | 27A Ta 60A Tc 52A Ta 60A Tc | 49nC @ 10V, 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN32D4SDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn32d4sdw7-datasheets-5926.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 290mW | 260 | 30 | 650mA | 30V | 290mW | 2 N-Channel (Dual) | 50pF @ 15V | 400m Ω @ 250mA, 10V | 1.6V @ 250μA | 1.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
VMM90-09F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-vmm9009f-datasheets-2102.pdf | Y3-Li | Lead Free | 9 | 28 Weeks | 9 | yes | No | UPPER | UNSPECIFIED | VMM | 2 | FET General Purpose Power | 85A | 20V | SILICON | ISOLATED | SWITCHING | 900V | METAL-OXIDE SEMICONDUCTOR | 0.076Ohm | 2 N-Channel (Dual) | 76m Ω @ 65A, 10V | 5V @ 30mA | 960nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | EAR99 | 200mW | 2 | Dual | Other Transistors | 175 ns | 251 ns | 100mA | -1V | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.18A | N and P-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA 100mA | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||||||
DMC2710UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmc2710udw7-datasheets-2106.pdf | 6-TSSOP, SC-88, SOT-363 | 23 Weeks | 20V | 290mW Ta | N and P-Channel Complementary | 42pF 49pF @ 16V | 450m Ω @ 600mA, 4.5V, 750m Ω @ 430mA, 4.5V | 1V @ 250μA | 750mA Ta 600mA Ta | 600pC, 700pC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN31D5UDA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn31d5uda7b-datasheets-2107.pdf | 6-SMD, No Lead | 15 Weeks | e3 | Matte Tin (Sn) | 2 N-Channel (Dual) | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 400mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP32D9UDA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmp32d9uda7b-datasheets-2108.pdf | 6-SMD, No Lead | 15 Weeks | e3 | Matte Tin (Sn) | 2 P-Channel (Dual) | 5 Ω @ 100mA, 4.5V | 1V @ 250μA | 220mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N48FU,LF | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | 6 | No | GULL WING | 2 | 2 | 35 ns | 180 ns | 100mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 300mW | 0.1A | 5.4Ohm | 2 N-Channel (Dual) | 15.1pF @ 3V | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||
DMC2990UDJQ-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmc2990udjq7-datasheets-2093.pdf | SOT-963 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 350mW Ta | N and P-Channel Complementary | 27.6pF @ 15V 28.7pF @ 15V | 990m Ω @ 100mA, 4.5V, 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 450mA Ta 310mA Ta | 0.5nC @ 4.5V, 0.4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
DMN62D0UDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn62d0udw7-datasheets-8038.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 2Ohm | 2 N-Channel (Dual) | 32pF @ 30V | 2 Ω @ 100mA, 4.5V | 1V @ 250μA | 0.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||
DMC31D5UDA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmc31d5uda7b-datasheets-2122.pdf | 6-SMD, No Lead | 15 Weeks | e3 | Matte Tin (Sn) | 30V | 370mW Ta | N and P-Channel Complementary | 22.6pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 400mA Ta | 380pC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN62D0UT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 6-TSSOP, SC-88, SOT-363 | 14 Weeks | SOT-363 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMD84100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmd84100-datasheets-2015.pdf | 8-PowerWDFN | 5.1mm | 750μm | 3.4mm | 8 | 12 Weeks | 153.4014mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 23W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 8.4 ns | 2.6ns | 2.8 ns | 14 ns | 21A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.1W | 7A | 100V | 2 N-Channel (Dual) Common Source | 980pF @ 50V | 20m Ω @ 7A, 10V | 4V @ 250μA | 7A | 16nC @ 10V | Standard | ||||||||||||||||||||||
NX138BKSF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-nx138bksx-datasheets-7925.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | AEC-Q101; IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 860mW | 0.21A | 2 N-Channel (Dual) | 20pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 330mA Tc | 0.7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
DMN3401LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn3401ldw13-datasheets-2060.pdf | 6-TSSOP, SC-88, SOT-363 | 22 Weeks | e3 | Matte Tin (Sn) | 30V | 290mW Ta | 2 N-Channel (Dual) | 50pF @ 15V | 400m Ω @ 590mA, 10V | 1.6V @ 250μA | 800mA Ta | 1.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTJD1155LT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ntjd1155lt2g-datasheets-2061.pdf | 6-TSSOP, SC-88, SOT-363 | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 8V | 400mW | N and P-Channel | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIZ980BDT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz980bdtt1ge3-datasheets-2040.pdf | 8-PowerPair™ | 8-PowerPair™ | 30V | 3.8W Ta 20W Tc 5W Ta 66W Tc | 2 N-Channel (Dual), Schottky | 790pF 3655pF @ 15V | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V | 2.2V @ 250μA | 23.7A Ta 54.8A Tc 54.3A Ta 197A Tc | 18nC, 79nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3401LDW-13 | Diodes Incorporated | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmc3401ldw13-datasheets-2065.pdf | 6-TSSOP, SC-88, SOT-363 | 23 Weeks | e3 | Matte Tin (Sn) | 30V | 290mW Ta | N and P-Channel Complementary | 50pF 19pF @ 15V | 400m Ω @ 590mA, 10V, 900m Ω @ 420mA, 10V | 1.6V @ 250μA, 2.6V @ 250μA | 800mA Ta 550mA Ta | 1.2nC, 800pC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
DMC3071LVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 22 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 30V | 700mW Ta | N and P-Channel Complementary | 190pF @ 15V 254pF @ 15V | 50m Ω @ 3.5A, 10V, 95m Ω @ 3.8A, 10V | 2.5V @ 250μA | 4.6A Ta 3.3A Ta | 4.5nC @ 10V, 6.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN67D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn67d8ldw13-datasheets-1994.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 320mW | NOT SPECIFIED | NOT SPECIFIED | 230mA | 60V | 320mW | 2 N-Channel (Dual) | 22pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.82nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 16 Weeks | yes | 150mW | 150mW | 250mA | 10V | 20V | 20V | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN61D9UDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d9udw7-datasheets-8247.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 3.5Ohm | 2 N-Channel (Dual) | 28.5pF @ 30V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 0.4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||
NX3020NAKVYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx3020nakv115-datasheets-7482.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 6 | YES | 260mW | GULL WING | 6 | 2 | 200mA | 30V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 5.2Ohm | 2 N-Channel (Dual) | 20pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 0.44nC @ 4.5V | Standard |
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