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FDMD84100 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMD84100
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 5937
- Description: FDMD84100 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 153.4014mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 23W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 8.4 ns |
| Power - Max | 2.1W |
| FET Type | 2 N-Channel (Dual) Common Source |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Rise Time | 2.6ns |
| Fall Time (Typ) | 2.8 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 21A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 750μm |
| Length | 5.1mm |
| Width | 3.4mm |
| RoHS Status | ROHS3 Compliant |
FDMD84100 Description
This package combines two N-Channel devices that are figuratively joined ternally in communication. This makes it possible for very low package parasitics and an improved thermal path to the bottom-mounted communication source pad. for increased power density, has a very tiny footprint (3.3 x 5 mm).
FDMD84100 Features
Maximum DS(on) at Vq = 10 V and Ip = 7 A is 20 mQ.
Max gs(on) is 32 mQ at 6 V, lD, and VGS.
Ideal for synchronous secondary side layout flexibility
"Termination is lead-free and compliant with RoHS."
100% of UILs were tested.
FDMD84100 Applications
Synchronous Rectifiers, Isolated DC-DC
switches with same ground loads
