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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SIZ240DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz240dtt1ge3-datasheets-1915.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 40V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 1180pF 1070pF @ 20V | 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V | 2.4V @ 250μA | 17.2A Ta 48A Tc 16.9A Ta 47A Tc | 23nC, 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL13DP10F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stl13dp10f6-datasheets-1916.pdf | 8-PowerVDFN | Lead Free | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 62.5W | NOT SPECIFIED | STL13 | NOT SPECIFIED | 13A | 100V | 62.5W | 2 P-Channel (Dual) | 864pF @ 25V | 180m Ω @ 1.7A, 10V | 4V @ 250μA | 16.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ208EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj208ept1ge3-datasheets-1883.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 40V | 27W Tc 48W Tc | 2 N-Channel (Dual) | 1700pF 3900pF @ 25V | 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V | 2.3V @ 250μA, 2.4V @ 250μA | 20A Tc 60A Tc | 33nC, 75nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TQM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tqm150nb04dcrrlg-datasheets-1922.pdf | 8-PowerTDFN | 8-PDFNU (5x6) | 40V | 2.4W Ta 48W Tc | 2 N-Channel (Dual) | 1135pF @ 20V | 15mOhm @ 9A, 10V | 4V @ 250μA | 9A Ta 39A Tc | 18nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ342ADT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz342adtt1ge3-datasheets-1833.pdf | 8-PowerWDFN | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 580pF @ 15V | 9.4mOhm @ 10A, 10V | 2.4V @ 250μA | 15.7A Ta 33.4A Tc | 12.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS5DP3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ H6 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STS5D | NOT SPECIFIED | 30V | 2.7W | 2 P-Channel (Dual) | 639pF @ 25V | 56m Ω @ 2.5A, 10V | 2.5V @ 250μA | 5A Ta | 6nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM110NB04LDCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm110nb04ldcrrlg-datasheets-1865.pdf | 8-PowerTDFN | 8-PDFN (5x6) | 40V | 2W Ta 48W Tc | 2 N-Channel (Dual) | 1269pF @ 20V | 11mOhm @ 10A, 10V | 2.5V @ 250μA | 10A Ta 48A Tc | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM250NB06LDCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm250nb06ldcrrlg-datasheets-1868.pdf | 8-PowerTDFN | 8-PDFN (5x6) | 60V | 2W Ta 48W Tc | 2 N-Channel (Dual) | 1314pF @ 30V | 25mOhm @ 6A, 10V | 2.5V @ 250μA | 6A Ta 29A Tc | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD609G | Alpha & Omega Semiconductor Inc. | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 18 Weeks | 40V | 2W Ta 27W Tc 2W Ta 30W Tc | N and P-Channel Complementary | 545pF 890pF @ 20V | 30m Ω @ 12A, 10V, 45m Ω @ 12A, 10V | 3V @ 250μA | 12A Tc | 13nC, 21nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5877NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5877nlt1g-datasheets-4039.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | AEC-Q101 | Halogen Free | YES | 3.2W | FLAT | 8 | Dual | 3.2W | 2 | FET General Purpose Power | R-PDSO-F6 | 17A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 6A | 74A | 0.06Ohm | 40 mJ | 2 N-Channel (Dual) | 540pF @ 25V | 39m Ω @ 7.5A, 10V | 3V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| STL38DN6F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | RoHS Compliant | /files/stmicroelectronics-stl38dn6f7ag-datasheets-1812.pdf | 8-PowerVDFN | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 57.7W Tc | 2 N-Channel (Dual) | 380pF @ 25V | 27m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 7.9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM150NB04LDCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm150nb04ldcrrlg-datasheets-1815.pdf | 8-PowerTDFN | 8-PDFN (5x6) | 40V | 2W Ta 40W Tc | 2 N-Channel (Dual) | 966pF @ 20V | 15mOhm @ 8A, 10V | 2.5V @ 250μA | 8A Ta 37A Tc | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8MA3TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8ma3tb1-datasheets-1813.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 18A | 0.057Ohm | 1.7 mJ | N and P-Channel | 300pF 480pF @ 15V | 28m Ω @ 7A, 10V, 50m Ω @ 6A, 10V | 2.5V @ 1mA | 7A Ta 6A Ta | 7.2nC, 10nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMWD16UN,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2005 | /files/nxpusainc-pmwd16un518-datasheets-0839.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 20V | 3.1W | 2 N-Channel (Dual) | 1366pF @ 16V | 19mOhm @ 3.5A, 4.5V | 700mV @ 1mA | 9.9A | 23.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7325PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 2004 | /files/infineontechnologies-irf7325trpbf-datasheets-0573.pdf | 8-SOIC (0.154, 3.90mm Width) | IRF7325PBF | 12V | 2W | 2 P-Channel (Dual) | 2020pF @ 10V | 24m Ω @ 7.8A, 4.5V | 900mV @ 250μA | 7.8A | 33nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTD1P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-nttd1p02r2-datasheets-0277.pdf | -20V | -1.45A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Lead Free | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 500mW | GULL WING | 260 | 8 | 40 | 500mW | 2 | Other Transistors | Not Qualified | 30ns | 30 ns | 30 ns | 1.45A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.16Ohm | -20V | 2 P-Channel (Dual) | 265pF @ 16V | 160m Ω @ 1.45A, 4.5V | 1.4V @ 250μA | 10nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF9953PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf9953trpbf-datasheets-5399.pdf | -30V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | No SVHC | 8 | No | 2W | IRF9953PBF | Dual | 2W | 2 | 8-SO | 190pF | 9.7 ns | 14ns | 6.9 ns | 20 ns | -2.3A | 20V | 30V | -1V | 2W | 250mOhm | -30V | 2 P-Channel (Dual) | 190pF @ 15V | -1 V | 250mOhm @ 1A, 10V | 1V @ 250μA | 2.3A | 12nC @ 10V | Standard | 250 mΩ | |||||||||||||||||||||||||||||||||||||||||
| TPCF8201(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 2003 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 20V | 330mW | 2 N-Channel (Dual) | 590pF @ 10V | 49m Ω @ 1.5A, 4.5V | 1.2V @ 200μA | 3A | 7.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7335D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2002 | 14-SOIC (0.154, 3.90mm Width) | 14-SOIC | 30V | 2W | 2 N-Channel (Dual) Asymmetrical | 1500pF @ 15V | 17.5mOhm @ 10A, 4.5V | 1V @ 250μA | 10A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD5904T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/onsemiconductor-nthd5904t1-datasheets-0905.pdf | 20V | 3.1A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.1W | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 35ns | 3.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.075Ohm | 2 N-Channel (Dual) | 75m Ω @ 3.1A, 4.5V | 600mV @ 250μA | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7342PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf7342trpbf-datasheets-5781.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 39 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | IRF7342PBF | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3.4A | 27A | 0.105Ohm | 114 mJ | 2 P-Channel (Dual) | 690pF @ 25V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 3.4A | 38nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6150 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 16-WFBGA | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | IRF6150 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | DRAIN | N-CHANNEL | 20V | 250V | METAL-OXIDE SEMICONDUCTOR | 3W | 2.2A | 8.8A | 3Ohm | 2 P-Channel (Dual) | 36m Ω @ 7.9A, 4.5V | 1.2V @ 250μA | 7.9A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMWD19UN,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 1997 | /files/nxpusainc-pmwd19un518-datasheets-0826.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 2.3W | 2 N-Channel (Dual) | 1478pF @ 10V | 23mOhm @ 3.5A, 4.5V | 700mV @ 1mA | 5.6A | 28nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7380PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7380trpbf-datasheets-2632.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | EAR99 | IRF7380PBF | 80V | 2W | 2 N-Channel (Dual) | 660pF @ 25V | 73m Ω @ 2.2A, 10V | 4V @ 250μA | 3.6A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7756TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2004 | 8-TSSOP (0.173, 4.40mm Width) | 12V | 1W | 2 P-Channel (Dual) | 1400pF @ 10V | 40m Ω @ 4.3A, 4.5V | 900mV @ 250μA | 4.3A | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMD2C02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntmd2c02r2-datasheets-0369.pdf | 20V | 2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 2W | DUAL | GULL WING | 260 | 8 | 40 | 2W | 2 | Other Transistors | Not Qualified | 40ns | 35 ns | 35 ns | 3.4A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.043Ohm | 20V | N and P-Channel | 1100pF @ 10V | 43m Ω @ 4A, 4.5V | 1.2V @ 250μA | 5.2A 3.4A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF7101PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7101trpbf-datasheets-5097.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | GULL WING | NOT SPECIFIED | IRF7101PBF | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.5A | 14A | 0.1Ohm | 2 N-Channel (Dual) | 320pF @ 15V | 100m Ω @ 1.8A, 10V | 3V @ 250μA | 3.5A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8J1TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-sp8j1tb-datasheets-0380.pdf | -30V | -5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | 2W | GULL WING | 260 | *J1 | 8 | 10 | 2 | Other Transistors | 15 ns | 30ns | 40 ns | 80 ns | 5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | 0.042Ohm | 2 P-Channel (Dual) | 1400pF @ 10V | 42m Ω @ 5A, 10V | 2.5V @ 1mA | 16nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| FDS6982 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-fds6982-datasheets-0820.pdf | 30V | 8.6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 187mg | No SVHC | 15mOhm | 8 | 2W | Dual | 2W | 2 | 11ns | 18 ns | 36 ns | 8.6A | 20V | 30V | 2.2V | 900mW | 30V | 2 N-Channel (Dual) | 760pF @ 10V | 2.2 V | 28m Ω @ 6.3A, 10V | 3V @ 250μA | 6.3A 8.6A | 12nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7306PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7306trpbf-datasheets-6230.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7306PBF | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 1.4W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3.6A | 14A | 0.1Ohm | 2 P-Channel (Dual) | 440pF @ 25V | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 3.6A | 25nC @ 10V | Logic Level Gate |
