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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | JEDEC-95 Code | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SP8M7TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m7tb-datasheets-0459.pdf | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M7 | 8 | 10 | 2 | Other Transistors | Not Qualified | 50ns | 7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | N and P-Channel | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 7A | 5.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| UM5K1NTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/rohmsemiconductor-um5k1ntr-datasheets-0404.pdf | 30V | 100mA | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 900μm | 1.25mm | Lead Free | 5 | No SVHC | 13Ohm | 5 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | GULL WING | 260 | *K1 | 5 | Dual | 10 | 150mW | 2 | FET General Purpose Power | 15 ns | 35ns | 35 ns | 80 ns | 100mA | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.1A | 30V | 2 N-Channel (Dual) Common Source | 13pF @ 5V | 1.5 V | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||
| BSO615N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso615n-datasheets-0338.pdf | 60V | 2.6A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | e0 | Tin/Lead (Sn/Pb) | 2W | GULL WING | 235 | BSO615 | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 15ns | 2.6A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10.4A | 0.15Ohm | 60 mJ | 2 N-Channel (Dual) | 380pF @ 25V | 150m Ω @ 2.6A, 4.5V | 2V @ 20μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| NTHD5905T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthd5905t1-datasheets-0402.pdf | -8V | -3A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.1W | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | 45ns | 3A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.09Ohm | 2 P-Channel (Dual) | 90m Ω @ 3A, 4.5V | 450mV @ 250μA | 9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SP8J4TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-sp8j4tb-datasheets-0408.pdf | -30V | -2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | e2 | TIN COPPER | 2W | GULL WING | 260 | *J4 | 8 | 10 | 2 | Other Transistors | Not Qualified | 10ns | 2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2A | 8A | 0.235Ohm | 2 P-Channel (Dual) | 190pF @ 10V | 235m Ω @ 2A, 10V | 2.5V @ 1mA | 2.4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7503TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/infineontechnologies-irf7503tr-datasheets-9978.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7503 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 2.4A | 14A | 0.135Ohm | 2 N-Channel (Dual) | 210pF @ 25V | 135m Ω @ 1.7A, 10V | 1V @ 250μA | 2.4A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m6tb-datasheets-0407.pdf | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M6 | 8 | 10 | 2 | Other Transistors | 15ns | 3.5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | N and P-Channel | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 3.5A | 3.9nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NTHD4401PT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-nthd4401pt1-datasheets-0361.pdf | -20V | -2.1A | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 10 hours ago) | yes | EAR99 | e3 | Tin (Sn) | 1.1W | C BEND | NTHD4401P | 8 | 1.1W | 2 | 13ns | 13 ns | 33 ns | 2.1A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.155Ohm | 50 pF | -20V | 2 P-Channel (Dual) | 300pF @ 10V | 155m Ω @ 2.1A, 4.5V | 1.2V @ 250μA | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| 2N7002V-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2005 | /files/microcommercialco-2n7002vtp-datasheets-0437.pdf | SOT-563, SOT-666 | compliant | 60V | 150mW | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 280mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTQD4154ZR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-ntqd4154zr2-datasheets-0303.pdf | 20V | 7.5A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.52W | GULL WING | NTQD4154Z | 8 | 2 | Not Qualified | 7.5A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 30A | 0.019Ohm | 2 N-Channel (Dual) | 1485pF @ 16V | 19m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 21.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4401PT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-nthd4401pt1-datasheets-0361.pdf | -20V | -2.1A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.1W | C BEND | 240 | NTHD4401P | 8 | 30 | 1.1W | 2 | Other Transistors | Not Qualified | 13ns | 13 ns | 33 ns | 2.1A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.155Ohm | 50 pF | -20V | 2 P-Channel (Dual) | 300pF @ 10V | 155m Ω @ 2.1A, 4.5V | 1.2V @ 250μA | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| MMDF2C03HDR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mmdf2c03hdr2-datasheets-0291.pdf | 30V | 4.1A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 2W | DUAL | GULL WING | 240 | MMDF2C03HD | 8 | 30 | 2W | 2 | Other Transistors | Not Qualified | 18ns | 194 ns | 81 ns | 3A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 21A | 0.07Ohm | 324 mJ | 30V | N and P-Channel | 630pF @ 24V | 70m Ω @ 3A, 10V | 3V @ 250μA | 4.1A 3A | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| NTJD2152PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntjd2152pt1-datasheets-0332.pdf | -8V | -775mA | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 20 hours ago) | yes | EAR99 | e3 | Tin (Sn) | 270mW | GULL WING | 260 | NTJD2152P | 6 | Dual | 40 | 270mW | 2 | Other Transistors | Not Qualified | 23ns | 23 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.775A | 0.3Ohm | 40 pF | -8V | 2 P-Channel (Dual) | 225pF @ 8V | 300m Ω @ 570mA, 4.5V | 1V @ 250μA | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| NTMD2C02R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntmd2c02r2-datasheets-0369.pdf | 20V | 2A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 2W | DUAL | GULL WING | 240 | 8 | 30 | 2W | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | 40ns | 35 ns | 35 ns | 3.4A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 48A | 0.043Ohm | 20V | N and P-Channel | 1100pF @ 10V | 43m Ω @ 4A, 4.5V | 1.2V @ 250μA | 5.2A 3.4A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| 19MT050XF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | Non-RoHS Compliant | 2003 | /files/vishaysemiconductordiodesdivision-19mt050xf-datasheets-0372.pdf | 500V | 31A | 16-MTP Module | Contains Lead | 1.14kW | 1kW | 16-MTP | 7.21nF | 165ns | 31A | 500V | 1140W | 500V | 4 N-Channel (H-Bridge) | 7210pF @ 25V | 220mOhm @ 19A, 10V | 6V @ 250μA | 31A | 160nC @ 10V | Standard | 220 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9910 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | NOT SPECIFIED | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 12A | 98A | 0.0093Ohm | 26 mJ | 2 N-Channel (Dual) | 900pF @ 10V | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 10A 12A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD5902T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/onsemiconductor-nthd5902t1-datasheets-0390.pdf | 30V | 2.9A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.1W | C BEND | 8 | 2 | FET General Purpose Power | Not Qualified | 12ns | 2.9A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 85m Ω @ 2.9A, 10V | 1V @ 250μA | 7.5 nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| XP0187800L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2004 | /files/panasonicelectroniccomponents-xp0187800l-datasheets-0336.pdf | 50V | 100mA | 5-TSSOP, SC-70-5, SOT-353 | Lead Free | 150mW | SMini5-G1 | 12pF | 100mA | 50V | 150mW | 2 N-Channel (Dual) | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA | Logic Level Gate | 12 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO203PNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | /files/infineontechnologies-bso203pntma1-datasheets-0172.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 2W | GULL WING | 2 | 8.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 0.021Ohm | 97 mJ | 2 P-Channel (Dual) | 2242pF @ 15V | 21m Ω @ 8.2A, 4.5V | 1.2V @ 100μA | 48.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD2152PT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntjd2152pt1-datasheets-0332.pdf | -8V | -775mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | OBSOLETE (Last Updated: 21 hours ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 270mW | GULL WING | 240 | NTJD2152P | 6 | Dual | 30 | 270mW | 2 | Other Transistors | Not Qualified | 23ns | 23 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.775A | 0.3Ohm | 40 pF | -8V | 2 P-Channel (Dual) | 225pF @ 8V | 300m Ω @ 570mA, 4.5V | 1V @ 250μA | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| 2N7002V-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/diodesincorporated-2n7002va7-datasheets-0648.pdf | 60V | 280mA | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 3.005049mg | 7.5Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 150mW | FLAT | 260 | 6 | 2 | Dual | 40 | 150mW | 2 | FET General Purpose Power | 20 ns | 20 ns | 280mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60V | 5 pF | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||
| NTQD6968R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/onsemiconductor-ntqd6968r2-datasheets-0350.pdf | 20V | 6.6A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 940mW | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | 6.6A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.42W | 5.4A | 20A | 0.022Ohm | 150 mJ | 2 N-Channel (Dual) | 900pF @ 16V | 22m Ω @ 6.6A, 4.5V | 1.2V @ 250μA | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| NTJD4401NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 20V | 630mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | YES | 270mW | GULL WING | 240 | NTJD4401N | 6 | Dual | 30 | 270mW | 2 | FET General Purpose Power | Not Qualified | 227ns | 227 ns | 786 ns | 630mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.375Ohm | 5 pF | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| IRF9910TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 10A | 83A | 0.0134Ohm | 33 mJ | 2 N-Channel (Dual) | 900pF @ 10V | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 10A 12A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| NTQD6866R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntqd6866r2-datasheets-0357.pdf | 20V | 6.9A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | 940mW | GULL WING | 240 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 45ns | 90 ns | 40 ns | 4.7A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.032Ohm | 175 pF | 20V | 2 N-Channel (Dual) | 1400pF @ 16V | 32m Ω @ 6.9A, 4.5V | 1.2V @ 250μA | 22nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NTHC5513T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-nthc5513t1g-datasheets-6522.pdf | 20V | 3.1A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | 1.1W | C BEND | 240 | NTHC5513 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | Not Qualified | 13ns | 33 ns | 2.2A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.1A | 10A | -20V | N and P-Channel | 180pF @ 10V | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A 2.2A | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTMD2P01R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntmd2p01r2-datasheets-0315.pdf | -16V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 710mW | GULL WING | 240 | 8 | 30 | 2W | 2 | Other Transistors | Not Qualified | 35ns | 29 ns | 33 ns | 2.3A | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 16V | METAL-OXIDE SEMICONDUCTOR | 9A | 0.1Ohm | 350 mJ | -16V | 2 P-Channel (Dual) | 750pF @ 16V | 100m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| NTHD2102PT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-nthd2102pt1-datasheets-0318.pdf | -8V | -3.4A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 2 days ago) | no | not_compliant | e0 | 1.1W | C BEND | 240 | NTHD2102P | 8 | 30 | 1.1W | 2 | Other Transistors | Not Qualified | 20ns | 20 ns | 20 ns | 3.4A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4.6A | -8V | 2 P-Channel (Dual) | 715pF @ 6.4V | 58m Ω @ 3.4A, 4.5V | 1.5V @ 250μA | 16nC @ 2.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTMD6N02R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-ntmd6n02r2g-datasheets-3840.pdf | 20V | 6A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | 730mW | GULL WING | 240 | NTMD6N02 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 35ns | 80 ns | 45 ns | 3.92A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 0.035Ohm | 360 mJ | 20V | 2 N-Channel (Dual) | 1100pF @ 16V | 35m Ω @ 6A, 4.5V | 1.2V @ 250μA | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| MMDF1N05ER2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mmdf1n05er2-datasheets-0323.pdf | 50V | 1A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 2 weeks ago) | no | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 2W | GULL WING | 240 | MMDF1N05E | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 30ns | 25 ns | 40 ns | 2A | 20V | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2A | 10A | 0.3Ohm | 300 mJ | 50V | 2 N-Channel (Dual) | 330pF @ 25V | 300m Ω @ 1.5A, 10V | 3V @ 250μA | 12.5nC @ 10V | Logic Level Gate |
