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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| IRF7317PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7317trpbf-datasheets-2708.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | IRF7317PBF | 20V | 2W | N and P-Channel | 900pF @ 15V | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 6.6A 5.3A | 27nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8207(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2002 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 20V | 6A | 8-SOIC (0.173, 4.40mm Width) | Lead Free | 8 | 750mW | TPC*207 | 1.5W | 2 | 8-SOP (5.5x6.0) | 2.01nF | 6A | 12V | 20V | 450mW | 2 N-Channel (Dual) | 2010pF @ 10V | 20mOhm @ 4.8A, 4V | 1.2V @ 200μA | 6A | 22nC @ 5V | Logic Level Gate | 20 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7105trpbf-datasheets-6154.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | IRF7105PBF | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 2W | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3.5A | 14A | 0.1Ohm | N and P-Channel | 330pF @ 15V | 100m Ω @ 1A, 10V | 3V @ 250μA | 3.5A 2.3A | 27nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| SP8M8TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-sp8m8tb-datasheets-0488.pdf | 6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M8 | 8 | 10 | 2 | Other Transistors | Not Qualified | 25ns | 4.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6A | 24A | 0.047Ohm | N and P-Channel | 520pF @ 10V | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 6A 4.5A | 7.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| US5K3TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2004 | 30V | 1.5A | Lead Free | 5 | 1.5A | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K4TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8k4tb-datasheets-0377.pdf | 30V | 9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | e2 | TIN COPPER | 2W | GULL WING | 260 | *K4 | 8 | 10 | 2 | FET General Purpose Power | Not Qualified | 15ns | 9A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 9A | 36A | 0.024Ohm | 2 N-Channel (Dual) | 1190pF @ 10V | 17m Ω @ 9A, 10V | 2.5V @ 1mA | 21nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SP8M9TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m9tb-datasheets-0493.pdf | 9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M9 | 8 | 10 | 2 | Other Transistors | Not Qualified | 30ns | 5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 9A | 36A | 0.025Ohm | N and P-Channel | 1190pF @ 10V | 18m Ω @ 9A, 10V | 2.5V @ 1mA | 9A 5A | 21nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| XP0487800L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-xp0487800l-datasheets-0222.pdf | 50V | 100mA | 6-TSSOP, SC-88, SOT-363 | 150mW | SMINI6-G1 | 12pF | 100mA | 50V | 150mW | 2 N-Channel (Dual) | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA | Logic Level Gate | 12 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7324trpbf-datasheets-6998.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 19 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | IRF7324PBF | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 9A | 71A | 0.018Ohm | 2 P-Channel (Dual) | 2940pF @ 15V | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 9A | 63nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IRF5850TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2003 | /files/infineontechnologies-irf5850-datasheets-0069.pdf | -20V | -2.2A | SOT-23-6 Thin, TSOT-23-6 | Contains Lead | 6 | 960mW | 6-TSOP | 320pF | 14ns | 2.2A | 20V | 960mW | -20V | 2 P-Channel (Dual) | 320pF @ 15V | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250μA | 2.2A | 5.4nC @ 4.5V | Logic Level Gate | 135 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMD65N02N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/diodesincorporated-zxmd65n02n8ta-datasheets-0523.pdf | 20V | 5.7A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | unknown | e3 | MATTE TIN | 2W | GULL WING | 260 | 8 | 40 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 6.6A | 0.025Ohm | 2 N-Channel (Dual) | 25m Ω @ 6A, 4.5V | 700mV @ 250μA | 6.6A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7331TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7331trpbf-datasheets-0543.pdf | 20V | 7A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 30MOhm | 8 | No | 2W | GULL WING | IRF7331PBF | Dual | 2W | 2 | 7.6 ns | 22ns | 50 ns | 110 ns | 7A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 7A | 20V | 2 N-Channel (Dual) | 1340pF @ 16V | 1.2 V | 30m Ω @ 7A, 4.5V | 1.2V @ 250μA | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDC6036P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdc6036p-datasheets-0552.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 | 20V | 900mW | 2 P-Channel (Dual) | 992pF @ 10V | 44mOhm @ 5A, 4.5V | 1.5V @ 250μA | 5A | 14nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6000NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-fdc6000nz-datasheets-0558.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 FLMP | 20V | 1.2W | 2 N-Channel (Dual) | 840pF @ 10V | 20mOhm @ 6.5A, 4.5V | 1.5V @ 250μA | 7.3A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7309PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7309trpbf-datasheets-5452.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | IRF7309PBF | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 1.4W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MS-012AA | 4A | 16A | 0.05Ohm | N and P-Channel | 520pF @ 15V | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 4A 3A | 25nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||
| IRF7301PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7301trpbf-datasheets-5527.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7301PBF | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 1.4W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 5.2A | 21A | 0.05Ohm | 2 N-Channel (Dual) | 660pF @ 15V | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 5.2A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7304PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7304trpbf-datasheets-6191.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7304PBF | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 1.4W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.3A | 17A | 0.09Ohm | 2 P-Channel (Dual) | 610pF @ 15V | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7104trpbf-datasheets-2453.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | IRF7104PBF | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 2.3A | 10A | 0.25Ohm | 2 P-Channel (Dual) | 290pF @ 15V | 250m Ω @ 1A, 10V | 3V @ 250μA | 2.3A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF7338PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2004 | /files/infineon-irf7338pbf-datasheets-8560.pdf | 6.3A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 34mOhm | 8 | 2W | IRF7338PBF | 2W | 2 | 8-SO | 640pF | 13ns | 25 ns | 27 ns | 6.3A | 8V | 12V | 2W | 34mOhm | 12V | N and P-Channel | 640pF @ 9V | 34mOhm @ 6A, 4.5V | 1.5V @ 250μA | 6.3A 3A | 8.6nC @ 4.5V | Logic Level Gate | 34 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| UP0487800L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2004 | /files/panasonicelectroniccomponents-up0487800l-datasheets-0412.pdf | 50V | 100mA | SOT-563, SOT-666 | Lead Free | 6 | No | 125mW | SSMINI6-F1 | 12pF | 200 ns | 200 ns | 100mA | 7V | 50V | 125mW | 2 N-Channel (Dual) | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA | Logic Level Gate | 12 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K5TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8k5tb-datasheets-0440.pdf | 30V | 3.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | 2W | GULL WING | 260 | *K5 | 8 | 10 | 2 | FET General Purpose Power | Not Qualified | 6ns | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 14A | 0.15Ohm | 2 N-Channel (Dual) | 140pF @ 10V | 83m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SP8K1TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8k1tb-datasheets-0423.pdf | 30V | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | 2W | GULL WING | 260 | *K1 | 8 | 10 | 2W | 2 | FET General Purpose Power | 6 ns | 8ns | 5 ns | 22 ns | 5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | 30V | 2 N-Channel (Dual) | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SP8M3TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m3tb-datasheets-0418.pdf | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M3 | 8 | 10 | 2 | Other Transistors | 25ns | 4.5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | N and P-Channel | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 4.5A | 3.9nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| IRF7311TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | /files/infineontechnologies-irf7311tr-datasheets-0451.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 6.6A | 26A | 0.029Ohm | 100 mJ | 2 N-Channel (Dual) | 900pF @ 15V | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 6.6A | 27nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| NDS9947 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-nds9947-datasheets-9852.pdf | -20V | -3.5A | 8-SOIC (0.154, 3.90mm Width) | 187mg | 8 | 900mW | Dual | 2W | 2 | 13ns | 9 ns | 14 ns | -3.5A | 20V | 900mW | -20V | 2 P-Channel (Dual) | 542pF @ 10V | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 3.5A | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M5TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m5tb-datasheets-0400.pdf | 6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M5 | 8 | 10 | 2 | Other Transistors | Not Qualified | 50ns | 7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6A | 24A | 0.047Ohm | N and P-Channel | 520pF @ 10V | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 6A 7A | 7.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SP8M7TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m7tb-datasheets-0459.pdf | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M7 | 8 | 10 | 2 | Other Transistors | Not Qualified | 50ns | 7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | N and P-Channel | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 7A | 5.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| UM5K1NTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/rohmsemiconductor-um5k1ntr-datasheets-0404.pdf | 30V | 100mA | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 900μm | 1.25mm | Lead Free | 5 | No SVHC | 13Ohm | 5 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | GULL WING | 260 | *K1 | 5 | Dual | 10 | 150mW | 2 | FET General Purpose Power | 15 ns | 35ns | 35 ns | 80 ns | 100mA | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.1A | 30V | 2 N-Channel (Dual) Common Source | 13pF @ 5V | 1.5 V | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||
| BSO615N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso615n-datasheets-0338.pdf | 60V | 2.6A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | e0 | Tin/Lead (Sn/Pb) | 2W | GULL WING | 235 | BSO615 | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 15ns | 2.6A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10.4A | 0.15Ohm | 60 mJ | 2 N-Channel (Dual) | 380pF @ 25V | 150m Ω @ 2.6A, 4.5V | 2V @ 20μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF7910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7910trpbf-datasheets-2765.pdf | 12V | 10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | 2W | GULL WING | IRF7910PBF | Dual | 2W | 2 | FET General Purpose Power | 9.4 ns | 22ns | 6.3 ns | 16 ns | 10A | 12V | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 0.015Ohm | 12V | 2 N-Channel (Dual) | 1730pF @ 6V | 2 V | 15m Ω @ 8A, 4.5V | 2V @ 250μA | 26nC @ 4.5V | Logic Level Gate |
