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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| PMGD8000LN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-pmgd8000ln115-datasheets-9727.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 0.2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 200mW | 0.125A | 8Ohm | 2 N-Channel (Dual) | 18.5pF @ 5V | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 125mA | 0.35nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| APTMC120AM08CD3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am08cd3ag-datasheets-9758.pdf | D-3 Module | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 1.1kW | 1 | FET General Purpose Power | 250A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 1100W | 260A | 2 N-Channel (Half Bridge) | 9500pF @ 1000V | 10m Ω @ 200A, 20V | 2.2V @ 10mA (Typ) | 250A Tc | 490nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM19FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50am19fg-datasheets-9759.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | 18 ns | 35ns | 77 ns | 87 ns | 163A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1136W | 0.019Ohm | 2 N-Channel (Half Bridge) | 22400pF @ 25V | 22.5m Ω @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| NTHD2102PT1 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntljd2104ptbg-datasheets-3010.pdf | 8-SMD, Flat Lead | 8 | yes | unknown | e0 | TIN LEAD | YES | C BEND | 240 | 8 | 30 | 2 | COMMERCIAL | R-XDSO-C8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 3.4A | 4.6A | 0.058Ohm | 2 P-Channel (Dual) | 715pF @ 6.4V | 58m Ω @ 3.4A, 4.5V | 1.5V @ 250μA | 3.4A | 16nC @ 2.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| STL20DNF06LAG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 6 | EAR99 | YES | FLAT | NOT SPECIFIED | STL20 | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 75W | 20A | 80A | 0.05Ohm | 210 mJ | 2 N-Channel (Dual) | 670pF @ 25V | 40m Ω @ 4A, 10V | 2.5V @ 250μA | 20A | 22.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| STL60N32N3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl60n32n3ll-datasheets-9670.pdf | 8-PowerVDFN | Lead Free | 4 | 8 | EAR99 | e3 | Matte Tin (Sn) - annealed | 50W | NO LEAD | 260 | STL60 | 8 | Dual | 30 | 50W | 2 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 30ns | 12 ns | 37 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 23W 50W | 32A | 0.12Ohm | 30V | 2 N-Channel (Dual) Asymmetrical | 950pF @ 25V | 9.2m Ω @ 6.8A, 10V | 1V @ 1μA | 32A 60A | 6.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| STS4DNF60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts4dnf60-datasheets-9638.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOW THRESHOLD | No | 2W | GULL WING | STS4D | 8 | 2W | 2 | FET General Purpose Power | 7 ns | 18ns | 6 ns | 17 ns | 4A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 4A | 16A | 0.09Ohm | 60V | 2 N-Channel (Dual) | 315pF @ 25V | 90m Ω @ 2A, 10V | 4V @ 250μA | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| APTM120DU15G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm120du15g-datasheets-9612.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 20 ns | 15ns | 45 ns | 160 ns | 60A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 1250W | 0.175Ohm | 3000 mJ | 2 N-Channel (Dual) | 20600pF @ 25V | 175m Ω @ 30A, 10V | 5V @ 10mA | 748nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| PMDPB65UP,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn2222anlbu-datasheets-1910.pdf | 6-UDFN Exposed Pad | DFN2020-6 | 20V | 520mW | 2 P-Channel (Dual) | 380pF @ 10V | 70mOhm @ 1A, 4.5V | 1V @ 250μA | 3.5A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STC6NF30V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stc6nf30v-datasheets-9593.pdf | 30V | 6A | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | EAR99 | LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.5W | GULL WING | 260 | STC6NF | 8 | 10 | 1.5W | 2 | FET General Purpose Power | 20 ns | 25ns | 25 ns | 32 ns | 6A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 0.03Ohm | 30V | 2 N-Channel (Dual) | 800pF @ 25V | 25m Ω @ 3A, 4.5V | 600mV @ 250μA | 9nC @ 2.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| APTC60TAM24TPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60tam24tpg-datasheets-9620.pdf | SP6 | 36 Weeks | 23 | EAR99 | No | 462W | 3 | FET General Purpose Power | 95A | 600V | METAL-OXIDE SEMICONDUCTOR | 462W | 6 N-Channel (3-Phase Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS7C4F30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts7c4f30l-datasheets-9614.pdf | 7A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | e4 | NICKEL PALLADIUM GOLD | 2W | DUAL | GULL WING | 260 | STS7C4 | 8 | 30 | 2 | Other Transistors | Not Qualified | 35ns | 4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.026Ohm | N and P-Channel | 1050pF @ 25V | 22m Ω @ 3.5A, 10V | 2.5V @ 250μA | 7A 4A | 23nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| FDW2501NZ | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdy2001pz-datasheets-2722.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | e3 | TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 600mW | MO-153AA | 5.5A | 0.018Ohm | 2 N-Channel (Dual) | 1286pF @ 10V | 18m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 5.5A | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| STS8DNH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts8dnh3ll-datasheets-9642.pdf | 30V | 8A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 22mOhm | 8 | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS8DN | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 14.5ns | 8 ns | 23 ns | 8A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 30V | 2 N-Channel (Dual) | 857pF @ 25V | 22m Ω @ 4A, 10V | 1V @ 250μA | 10nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| STC5NF30V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stc5nf30v-datasheets-9646.pdf | 30V | 5A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | 8 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.5W | GULL WING | 260 | STC5NF | 8 | NOT SPECIFIED | 1.5W | 2 | FET General Purpose Power | Not Qualified | 33ns | 33 ns | 27 ns | 5A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 5A | 0.035Ohm | 30V | 2 N-Channel (Dual) | 460pF @ 15V | 31m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 11.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| STS2DPF80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts2dpf80-datasheets-9639.pdf | -80V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 250mOhm | 8 | EAR99 | unknown | 2.5W | GULL WING | STS2D | 8 | 2.5W | 2 | Other Transistors | Not Qualified | 18ns | 13 ns | 32 ns | 2A | 20V | SILICON | SWITCHING | 80V | METAL-OXIDE SEMICONDUCTOR | 2A | 8A | -80V | 2 P-Channel (Dual) | 739pF @ 25V | 250m Ω @ 1A, 10V | 4V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| STS5DPF20L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts5dpf20l-datasheets-9649.pdf | -20V | -5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | No | 1.6W | GULL WING | STS5D | 8 | 1.6W | 2 | Other Transistors | 25 ns | 35ns | 35 ns | 125 ns | 5A | 16V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 5A | 0.075Ohm | 20V | 2 P-Channel (Dual) | 1350pF @ 16V | 55m Ω @ 2.5A, 10V | 2.5V @ 250μA | 16nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| STC5DNF30V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stc5dnf30v-datasheets-9630.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | EAR99 | No | e4 | NICKEL PALLADIUM GOLD | 1.3W | GULL WING | 260 | STC5DNF | 8 | 10 | 1.3W | 2 | FET General Purpose Power | 7 ns | 33ns | 33 ns | 27 ns | 4.5A | 8V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.04Ohm | 30V | 2 N-Channel (Dual) | 460pF @ 25V | 35m Ω @ 2.3A, 4.5V | 600mV @ 250μA | 11.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| STS3DPF60L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts3dpf60l-datasheets-9592.pdf | -60V | -3A | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOW THRESHOLD | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS3D | 8 | 30 | 2W | 2 | Other Transistors | Not Qualified | 54ns | 14.5 ns | 39 ns | 3A | 16V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.16Ohm | -60V | 2 P-Channel (Dual) | 630pF @ 25V | 120m Ω @ 1.5A, 10V | 1.5V @ 250μA | 15.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| FDW2601NZ | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw2601nz-datasheets-9603.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 1.6W | 2 N-Channel (Dual) Common Drain | 1840pF @ 15V | 15mOhm @ 8.2A, 4.5V | 1.5V @ 250μA | 8.2A | 30nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS4DNF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts4dnf30l-datasheets-9576.pdf | 30V | 4A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 50mOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS4D | 8 | 30 | 2W | 2 | FET General Purpose Power | 11 ns | 100ns | 22 ns | 25 ns | 4A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4A | 16A | 30V | 2 N-Channel (Dual) | 330pF @ 25V | 50m Ω @ 2A, 10V | 1V @ 250μA | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| STS4C3F60L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts4c3f60l-datasheets-9578.pdf | 4A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 500mW | DUAL | GULL WING | 260 | STS4C | 8 | 30 | 2W | 2 | Other Transistors | 54ns | 14.5 ns | 39 ns | 530mA | 16V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 16A | 0.065Ohm | 60V | N and P-Channel | 1030pF @ 25V | 55m Ω @ 2A, 10V | 1V @ 250μA | 4A 3A | 20.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||
| STS5DNF20V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts5dnf20v-datasheets-9611.pdf | 20V | 5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.65mm | 4mm | Lead Free | 8 | No SVHC | 40mOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS5D | 8 | 30 | 2W | 2 | FET General Purpose Power | 7 ns | 33ns | 10 ns | 27 ns | 5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.7V | 5A | 20V | 2 N-Channel (Dual) | 460pF @ 25V | 40m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 11.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||
| IRF7380PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf7380pbf-datasheets-9565.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 80V | 2W | 2 N-Channel (Dual) | 660pF @ 25V | 73mOhm @ 2.2A, 10V | 4V @ 250μA | 3.6A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC170AM30CT1AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc170am30ct1ag-datasheets-9567.pdf | SP1 | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 700W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 106A | 1700V 1.7kV | 2 N Channel (Phase Leg) | 6160pF @ 1000V | 30m Ω @ 100A, 20V | 2.3V @ 5mA (Typ) | 100A Tc | 380nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM33CTPAG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam33ctpag-datasheets-9568.pdf | SP6 | 23 | 22 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 370W | UPPER | UNSPECIFIED | 6 | R-XUFM-X23 | 78A | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 155A | 0.033Ohm | 6 N-Channel (3-Phase Bridge) | 2850pF @ 1000V | 33m Ω @ 60A, 20V | 2.2V @ 3mA (Typ) | 78A Tc | 148nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||
| NTMD4N03R2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntmd4n03r2-datasheets-9574.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e0 | TIN LEAD | YES | GULL WING | 240 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 4A | 12A | 0.06Ohm | 80 mJ | 2 N-Channel (Dual) | 400pF @ 20V | 60m Ω @ 4A, 10V | 3V @ 250μA | 4A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| PMDPB70EN,115 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-pn2222arlra-datasheets-7038.pdf | 6-UDFN Exposed Pad | 6-HUSON-EP (2x2) | 30V | 510mW | 2 N-Channel (Dual) | 130pF @ 15V | 57mOhm @ 3.5A, 10V | 2.5V @ 250μA | 3.5A | 4.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100A13SCG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm100a13scg-datasheets-9583.pdf | SP6 | Lead Free | 7 | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 1.25kW | 2 | Not Qualified | R-XUFM-X7 | 9 ns | 24 ns | 50 ns | 65A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 15200pF @ 25V | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| STS4DPF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | -30V | -4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 80mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 2W | GULL WING | 260 | STS4D | 8 | Single | 30 | 2W | 2 | Other Transistors | 25 ns | 35ns | 35 ns | 125 ns | 4A | 16V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 4A | 16A | -30V | 2 P-Channel (Dual) | 1350pF @ 25V | 80m Ω @ 2A, 10V | 1V @ 250μA | 16nC @ 5V | Standard |
