Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCB40P1200LB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB40P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 2 N-Channel (Dual) Common Source | 58A | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB40P1200LB-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Tube | /files/ixys-mcb40p1200lbtub-datasheets-9397.pdf | 9-SMD Power Module | 28 Weeks | 1200V 1.2kV | 2 N-Channel (Dual) Common Source | 58A | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60TAM35PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60tam35pg-datasheets-9411.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 416W | 6 | FET General Purpose Power | Not Qualified | R-XUFM-X21 | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 200A | 0.035Ohm | 1800 mJ | 6 N-Channel (3-Phase Bridge) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| DMT3020LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmt3020lsdq13-datasheets-7033.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | 30V | 1W Ta | 2 N-Channel (Dual) | 393pF @ 15V | 20m Ω @ 9A, 10V | 2.5V @ 250μA | 16A Tc | 7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K23-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/nexperiausainc-buk7k2380ex-datasheets-6904.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | compliant | 8 | 80V | 53W | 2 N-Channel (Dual) | 1542pF @ 25V | 23m Ω @ 10A, 10V | 4V @ 1mA | 17A Ta | 22.8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP3A16DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-zxmp3a16dn8ta-datasheets-7057.pdf | -30V | -5.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 45mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | Other Transistors | 3.8 ns | 6.5ns | 21.4 ns | 37.1 ns | 5.5A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8W | -30V | 2 P-Channel (Dual) | 1022pF @ 15V | 45m Ω @ 4.2A, 10V | 1V @ 250μA (Min) | 4.2A | 29.6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| FDMS3668S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3668s-datasheets-6989.pdf | 8-PowerTDFN | 5mm | 1.1mm | 5.9mm | Lead Free | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | FLAT | Dual | 2.5W | 2 | FET General Purpose Power | R-PDSO-F6 | 7.7 ns | 19 ns | 18A | 12V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 13A | 70 pF | 30V | 2 N-Channel (Dual) Asymmetrical | 1765pF @ 15V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 18A | 29nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOSD21313C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 30V | 1.7W | 2 P-Channel (Dual) | 1100pF @ 15V | 32m Ω @ 5.7A, 10V | 2.2V @ 250μA | 5.7A Ta | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87355Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /storage/upload/CSD87355Q5D.pdf | 8-PowerLDFN | 5mm | 6mm | Contains Lead | 8 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.5mm | EAR99 | not_compliant | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 12W | NO LEAD | 1.27mm | CSD87355 | SWITCHING REGULATOR | 45A | 30V | 1.9V | 12V | 27V | PULSE WIDTH MODULATION | BUCK | 3.9mOhm | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 1860pF @ 15V | 1.9V @ 250μA | 13.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A16DN8QTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmp6a16dn8qta-datasheets-6772.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 73.992255mg | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.81W | GULL WING | 260 | 2 | Dual | 30 | 2 | 3.5 ns | 4.1ns | 10 ns | 35 ns | 2.9A | 20V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 1021pF @ 30V | 85m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 24.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VEC2616-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/onsemiconductor-vec2616tlw-datasheets-6453.pdf | 8-SMD, Flat Lead | Lead Free | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | 1W | 2.5A | 60V | 2.6V | N and P-Channel | 505pF @ 20V | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 3A 2.5A | 10nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K5R1-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk9k5r130ex-datasheets-6787.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 4 | 68W | GULL WING | 8 | 2 | R-PDSO-G6 | 40A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 68W | 329A | 0.0053Ohm | 2 N-Channel (Dual) | 3065pF @ 25V | 5.3m Ω @ 10A, 5V | 2.1V @ 1mA | 26.7nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSD21311C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 30V | 1.7W | 2 P-Channel (Dual) | 720pF @ 15V | 42m Ω @ 5A, 10V | 2.2V @ 250μA | 5A Ta | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF6MR12W2M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-ff6mr12w2m1b11boma1-datasheets-7053.pdf | Module | 16 Weeks | 1200V | 20mW Tc | 2 N-Channel (Dual) | 14700pF @ 800V | 5.63m Ω @ 200A, 15V | 5.55V @ 10mA | 200A Tj | 496nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K17-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/nexperiausainc-buk7k1780ex-datasheets-6860.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | compliant | 8 | 80V | 64W | 12.5mOhm | 2 N-Channel (Dual) | 4V @ 1mA | 21A Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K25-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k2540e115-datasheets-6619.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AVALANCHE RATED | No | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | 32W | GULL WING | 8 | 2 | Dual | 32W | 2 | R-PDSO-G6 | 4.4 ns | 4.5ns | 5.2 ns | 8.3 ns | 27A | 20V | 40V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 107A | 10 mJ | 40V | 2 N-Channel (Dual) | 525pF @ 25V | 25m Ω @ 5A, 10V | 4V @ 1mA | 7.9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1102ASAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1102sal-datasheets-3509.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | -16mA | -13.2V | 10.6V | 500mW | 180Ohm | -12V | 2 P-Channel (Dual) Matched Pair | 270Ohm @ 5V | 1.2V @ 10μA | Standard | 270 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSD32334C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.7W | 2 N-Channel (Dual) | 600pF @ 15V | 20m Ω @ 7A, 10V | 2.3V @ 250μA | 7A Ta | 20nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | 4.9A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 28nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| ALD111933SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/advancedlineardevicesinc-ald111933sal-datasheets-6940.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 Weeks | 8 | yes | EAR99 | unknown | 500mW | GULL WING | Dual | 500mW | 2 | 10 ns | 6.9mA | 10.6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500 Ω @ 5.9V | 3.35V @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2028UFU-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2028ufu7-datasheets-6923.pdf | 6-UFDFN Exposed Pad | 16 Weeks | EAR99 | 900mW | NOT SPECIFIED | NOT SPECIFIED | 7.5A | 20V | 900mW | 2 N-Channel (Dual) Common Drain | 887pF @ 10V | 20.2m Ω @ 4.5A, 4.5V | 1V @ 250μA | 18.4nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110900ASAL | Advanced Linear Devices Inc. | $5.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 10mV @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L36TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-SMD, Flat Leads | 6 | 12 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 500mW Ta | 0.5A | 0.85Ohm | N and P-Channel | 46pF 43pF @ 10V | 630m Ω @ 200mA, 5V, 1.31 Ω @ 100mA, 4.5V | 1V @ 1mA | 500mA Ta 330mA Ta | 1.23nC, 1.2nC @ 4V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K134-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k134100ex-datasheets-8245.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 32W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 9.8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 32W | 39A | 0.121Ohm | 10.9 mJ | 2 N-Channel (Dual) | 564pF @ 25V | 121m Ω @ 5A, 10V | 4V @ 1mA | 10.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRB40DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sirb40dpt1ge3-datasheets-6987.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 46.2W | 2 N-Channel (Dual) | 4290pF @ 20V | 3.25m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 45nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K5R6-30E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k5r630e115-datasheets-6927.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AVALANCHE RATED | Tin | not_compliant | e3 | AEC-Q101; IEC-60134 | YES | 64W | GULL WING | 8 | 2 | Dual | 2 | R-PDSO-G6 | 9.2 ns | 10ns | 12.9 ns | 17.9 ns | 40A | 20V | 30V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 64W | 314A | 0.0056Ohm | 2 N-Channel (Dual) | 1969pF @ 25V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 29.7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6J1T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-em6j1t2r-datasheets-6505.pdf | SOT-563, SOT-666 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 150mW | FLAT | 260 | *J1 | 6 | 10 | 150mW | 2 | Other Transistors | 6 ns | 4ns | 17 ns | 17 ns | 200mA | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.2A | -20V | 2 P-Channel (Dual) | 115pF @ 10V | 1.2 Ω @ 200mA, 4.5V | 1V @ 100μA | 1.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TT8J3TR | ROHM Semiconductor | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SMD, Flat Lead | 8 | 10 Weeks | EAR99 | not_compliant | YES | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 2.5A | 0.084Ohm | 2 P-Channel (Dual) | 460pF @ 15V | 84m Ω @ 2.5A, 10V | 2.5V @ 1mA | 2.5A | 4.8nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8K11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SMD, Flat Lead | 8 | 20 Weeks | yes | EAR99 | YES | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 1.5W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 3.5A | 12A | 0.07Ohm | 2 N-Channel (Dual) | 180pF @ 10V | 50m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A | 3.3nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110800PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 20mV @ 1μA | Standard | 500 Ω |
