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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Switching Frequency-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| SSM6N7002CFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 285mW | 170mA | 60V | 285mW | 2 N-Channel (Dual) | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.35nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008PBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008pbks115-datasheets-7993.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 4 Weeks | 6 | Tin | No | e3 | 445mW | 6 | Dual | 445mW | 2 | 19 ns | 30ns | 38 ns | 65 ns | 200mA | 8V | -30V | 30V | -30V | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002PS,125 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002ps125-datasheets-7999.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 420mW | GULL WING | 6 | 320mW | 2 | 3 ns | 4ns | 5 ns | 10 ns | 320mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 420mW | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM6K34NTCN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-um6k34ntcn-datasheets-7637.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | yes | EAR99 | 120mW | GULL WING | 260 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | 200mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.2A | 2.8Ohm | 2 N-Channel (Dual) | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | Logic Level Gate, 0.9V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3020NAKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx3020nakv115-datasheets-7482.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 375mW | GULL WING | 6 | 2 | Dual | 2 | 5 ns | 5ns | 17 ns | 34 ns | 200mA | 1.2V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 375mW | 30V | 2 N-Channel (Dual) | 13pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 0.44nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DW-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microcommercialco-2n7002dwtp-datasheets-8042.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 0.2W | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 200mW | 0.115A | 13.5Ohm | 5 pF | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD780SN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-pmgd780sn115-datasheets-0957.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | No SVHC | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 410mW | 2 | 490mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 410mW | 0.49A | 0.92Ohm | 2 N-Channel (Dual) | 23pF @ 30V | 920m Ω @ 300mA, 10V | 2.5V @ 250μA | 1.05nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002PS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002ps125-datasheets-7999.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 4 Weeks | 1.6Ohm | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 420mW | GULL WING | 6 | Dual | 320mW | 2 | 3 ns | 4ns | 4 ns | 10 ns | 320mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 420mW | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN62D0UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn62d0udw7-datasheets-8038.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 2Ohm | 2 N-Channel (Dual) | 32pF @ 30V | 2 Ω @ 100mA, 4.5V | 1V @ 250μA | 0.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4253DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh4253dtrpbf-datasheets-7189.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | 14 Weeks | No SVHC | 8 | EAR99 | No | 50W | Dual | 2 | FET General Purpose Power | 145A | 20V | 25V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 31W 50W | 35A | 2 N-Channel (Dual) | 1314pF @ 13V | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 64A 145A | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84AKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nexperiausainc-bss84akv115-datasheets-7928.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 500mW | FLAT | 6 | 330mW | 2 | 13 ns | 11ns | 25 ns | 48 ns | 170mA | 20V | -50V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 0.17A | 8.5Ohm | -50V | 2 P-Channel (Dual) | 36pF @ 25V | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.35nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VT6K1T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-vt6k1t2cr-datasheets-7529.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | 6 | EAR99 | e1 | TIN SILVER COPPER | 120mW | 260 | 6 | 2 | 10 | 2 | 5 ns | 4ns | 38 ns | 20 ns | 100mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 20V | 2 N-Channel (Dual) | 7.1pF @ 10V | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008CBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008cbks115-datasheets-7695.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | LOW THRESHOLD | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 445mW | 0.35A | N and P-Channel | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 350mA 200mA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008NBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008nbksh-datasheets-0814.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 4 Weeks | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | GULL WING | 6 | 2 | 445mW | 2 | 150°C | 150°C | R-PDSO-G6 | 15 ns | 69 ns | 350mA | 8V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.35A | 30V | 2 N-Channel (Dual) | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DWQ-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-2n7002dwq7f-datasheets-7748.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 16 Weeks | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | AEC-Q101 | 310mW | GULL WING | 260 | 2 | 40 | 310mW | 2 | FET General Purpose Power | 150°C | R-PDSO-G6 | 7 ns | 11 ns | 230mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 5 pF | 70V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2700UDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc2700udm7-datasheets-7650.pdf | SOT-23-6 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 6 | 17 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.12W | DUAL | GULL WING | 260 | DMC2700UDM | 6 | 40 | 1.12W | 2 | Other Transistors | 5.1 ns | 28.4 ns | 1.14A | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.34A | 0.4Ohm | 20V | N and P-Channel | 60.67pF @ 16V | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | 1.34A 1.14A | 0.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| VT6M1T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/rohmsemiconductor-vt6m1t2cr-datasheets-7492.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | EAR99 | e1 | TIN SILVER COPPER | 120mW | DUAL | 260 | 6 | 10 | 2 | R-PDSO-F6 | 100mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.1A | 4.2Ohm | N and P-Channel | 7.1pF @ 10V | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMHC3A01T8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmhc3a01t8ta-datasheets-7162.pdf | 3.1A | 8-SMD, Gull Wing | 6.7mm | 1.6mm | 3.7mm | Lead Free | 8 | 17 Weeks | No SVHC | 210mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | DUAL | 260 | ZXMHC3A01T8 | 8 | 30 | 1.7W | 4 | 2.3ns | 2.3 ns | 12.1 ns | 3.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 2.7A | 2 N and 2 P-Channel (H-Bridge) | 190pF @ 25V | 120m Ω @ 2.5A, 10V | 3V @ 250μA | 2.7A 2A | 3.9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| CSD86350Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 5mm | 1.5mm | 6mm | Contains Lead | 9 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.5mm | EAR99 | Gold, Tin | No | 1 | e3 | Matte Tin (Sn) | 13W | 260 | 1.27mm | CSD86350 | 9 | SWITCHING REGULATOR | Dual | 13W | 40mA | 1.3V | 9 ns | 23ns | 21 ns | 24 ns | 40A | 8V | 25V | 1.4V | 12V | 22V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 25V | 2 N-Channel (Half Bridge) | 1870pF @ 12.5V | 1.3 V | 6m Ω @ 20A, 8V | 2.1V @ 250μA | 10.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| DMN65D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn65d8ldw7-datasheets-7571.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 6 | 15 Weeks | 6.010099mg | No SVHC | 6Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 300mW | GULL WING | 260 | DMN65D8LDW | 6 | 40 | 300mW | 2 | FET General Purpose Powers | 150°C | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 180mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.15A | 60V | 2 N-Channel (Dual) | 22pF @ 25V | 6 Ω @ 115mA, 10V | 2V @ 250μA | 0.87nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SSM6N37FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 20V | 300mW | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 250mA Ta | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm6n7002kfulf-datasheets-7489.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | AEC-Q101 | 285mW | GULL WING | 2 | R-PDSO-G6 | 300mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.3A | 1.75Ohm | 2 N-Channel (Dual) | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3190LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3190ldw7-datasheets-3156.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | 6 | 15 Weeks | 6 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 320mW | GULL WING | 260 | 6 | 30 | 2 | 4.5 ns | 8.9ns | 15.6 ns | 30.3 ns | 1A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.19Ohm | 2 N-Channel (Dual) | 87pF @ 20V | 190m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS138BKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/nexperiausainc-bss138bksh-datasheets-0821.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 445mW | 0.32A | 2 N-Channel (Dual) | 56pF @ 10V | 1.6 Ω @ 320mA, 10V | 1.6V @ 250μA | 320mA | 0.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMKDM8005 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmkdm8005trpbfree-datasheets-6362.pdf | 6-TSSOP, SC-88, SOT-363 | 20 Weeks | YES | Other Transistors | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.65A | 2 P-Channel (Dual) | 100pF @ 16V | 360m Ω @ 350mA, 4.5V | 1V @ 250μA | 650mA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N15AFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | unknown | 300mW | GULL WING | 300mW | 2 | R-PDSO-G6 | 100mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 6Ohm | 30V | 2 N-Channel (Dual) | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3400SDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc3400sdw13-datasheets-7674.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | 6 | EAR99 | e3 | Matte Tin (Sn) | 310mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 450mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.4Ohm | N and P-Channel | 55pF @ 15V | 400m Ω @ 590mA, 10V | 1.6V @ 250μA | 650mA 450mA | 1.4nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7994DP-T1-GE3 | Vishay Siliconix | $22.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7994dpt1ge3-datasheets-7311.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 56MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.5W | C BEND | 260 | SI7994 | 8 | 2 | 40 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 35 ns | 15ns | 15 ns | 40 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 46W | 2 N-Channel (Dual) | 3500pF @ 15V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 80nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| SI7540ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7540adpt1ge3-datasheets-7127.pdf | PowerPAK® SO-8 Dual | 6 | 14 Weeks | EAR99 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.5W | 8A | 35A | 0.015Ohm | N and P-Channel | 1310pF @ 10V | 28m Ω @ 12A, 10V | 1.4V @ 250μA | 12A 9A | 48nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM120D12P2C005 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/rohmsemiconductor-bsm120d12p2c005-datasheets-7460.pdf | Module | 122mm | 21.1mm | 45.6mm | 8 | 25 Weeks | Unknown | 10 | not_compliant | 780W | UPPER | UNSPECIFIED | NOT SPECIFIED | 1 | NOT SPECIFIED | 2 | FET General Purpose Powers | R-XUFM-X8 | 120A | 22V | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 2.7V | 240A | 2 N-Channel (Half Bridge) | 14000pF @ 10V | 2.7 V | 2.7V @ 22mA | 120A Tc | Silicon Carbide (SiC) |
