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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Recovery Time | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Switching Frequency-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| FC6946010R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/panasonicelectroniccomponents-fc6946010r-datasheets-7847.pdf | SOT-563, SOT-666 | 1.6mm | 500μm | 1.2mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | 8541.21.00.95 | 125mW | FLAT | NOT SPECIFIED | FC694601 | Dual | NOT SPECIFIED | 125mW | 2 | FET General Purpose Power | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.1A | 15Ohm | 60V | 2 N-Channel (Dual) | 12pF @ 3V | 1.2 V | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2200UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2200udw13-datasheets-0928.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | 6 | EAR99 | Tin | e3 | 450mW | GULL WING | 260 | 30 | 2 | 9.8 ns | 88ns | 45 ns | 24.4 ns | 900mA | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.9A | 2 P-Channel (Dual) | 184pF @ 10V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7324trpbf-datasheets-6998.pdf | -20V | -9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 18mOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | IRF7324PBF | Dual | 30 | 2W | 2 | Other Transistors | 150°C | 17 ns | 36ns | 190 ns | 170 ns | -9A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 270 ns | 9A | 71A | -20V | 2 P-Channel (Dual) | 2940pF @ 15V | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 9A | 63nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SSM6N7002CFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 285mW | 170mA | 60V | 285mW | 2 N-Channel (Dual) | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.35nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008PBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008pbks115-datasheets-7993.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 4 Weeks | 6 | Tin | No | e3 | 445mW | 6 | Dual | 445mW | 2 | 19 ns | 30ns | 38 ns | 65 ns | 200mA | 8V | -30V | 30V | -30V | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002PS,125 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002ps125-datasheets-7999.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 420mW | GULL WING | 6 | 320mW | 2 | 3 ns | 4ns | 5 ns | 10 ns | 320mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 420mW | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM6K34NTCN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-um6k34ntcn-datasheets-7637.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | yes | EAR99 | 120mW | GULL WING | 260 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | 200mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.2A | 2.8Ohm | 2 N-Channel (Dual) | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | Logic Level Gate, 0.9V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3020NAKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx3020nakv115-datasheets-7482.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 375mW | GULL WING | 6 | 2 | Dual | 2 | 5 ns | 5ns | 17 ns | 34 ns | 200mA | 1.2V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 375mW | 30V | 2 N-Channel (Dual) | 13pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 0.44nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DW-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microcommercialco-2n7002dwtp-datasheets-8042.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 6 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 0.2W | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 200mW | 0.115A | 13.5Ohm | 5 pF | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD780SN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-pmgd780sn115-datasheets-0957.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | No SVHC | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 410mW | 2 | 490mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 410mW | 0.49A | 0.92Ohm | 2 N-Channel (Dual) | 23pF @ 30V | 920m Ω @ 300mA, 10V | 2.5V @ 250μA | 1.05nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138BKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/nexperiausainc-bss138bksh-datasheets-0821.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 445mW | 0.32A | 2 N-Channel (Dual) | 56pF @ 10V | 1.6 Ω @ 320mA, 10V | 1.6V @ 250μA | 320mA | 0.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMKDM8005 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmkdm8005trpbfree-datasheets-6362.pdf | 6-TSSOP, SC-88, SOT-363 | 20 Weeks | YES | Other Transistors | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.65A | 2 P-Channel (Dual) | 100pF @ 16V | 360m Ω @ 350mA, 4.5V | 1V @ 250μA | 650mA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N15AFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | unknown | 300mW | GULL WING | 300mW | 2 | R-PDSO-G6 | 100mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 6Ohm | 30V | 2 N-Channel (Dual) | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84AKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nexperiausainc-bss84akv115-datasheets-7928.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 500mW | FLAT | 6 | 330mW | 2 | 13 ns | 11ns | 25 ns | 48 ns | 170mA | 20V | -50V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 0.17A | 8.5Ohm | -50V | 2 P-Channel (Dual) | 36pF @ 25V | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.35nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT6K1T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-vt6k1t2cr-datasheets-7529.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | 6 | EAR99 | e1 | TIN SILVER COPPER | 120mW | 260 | 6 | 2 | 10 | 2 | 5 ns | 4ns | 38 ns | 20 ns | 100mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 20V | 2 N-Channel (Dual) | 7.1pF @ 10V | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008CBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008cbks115-datasheets-7695.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | LOW THRESHOLD | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 445mW | 0.35A | N and P-Channel | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 350mA 200mA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008NBKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008nbksh-datasheets-0814.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 4 Weeks | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | GULL WING | 6 | 2 | 445mW | 2 | 150°C | 150°C | R-PDSO-G6 | 15 ns | 69 ns | 350mA | 8V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.35A | 30V | 2 N-Channel (Dual) | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DWQ-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-2n7002dwq7f-datasheets-7748.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 16 Weeks | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | AEC-Q101 | 310mW | GULL WING | 260 | 2 | 40 | 310mW | 2 | FET General Purpose Power | 150°C | R-PDSO-G6 | 7 ns | 11 ns | 230mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 5 pF | 70V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2700UDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc2700udm7-datasheets-7650.pdf | SOT-23-6 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 6 | 17 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.12W | DUAL | GULL WING | 260 | DMC2700UDM | 6 | 40 | 1.12W | 2 | Other Transistors | 5.1 ns | 28.4 ns | 1.14A | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.34A | 0.4Ohm | 20V | N and P-Channel | 60.67pF @ 16V | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | 1.34A 1.14A | 0.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| VT6M1T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/rohmsemiconductor-vt6m1t2cr-datasheets-7492.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | EAR99 | e1 | TIN SILVER COPPER | 120mW | DUAL | 260 | 6 | 10 | 2 | R-PDSO-F6 | 100mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.1A | 4.2Ohm | N and P-Channel | 7.1pF @ 10V | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMHC3A01T8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmhc3a01t8ta-datasheets-7162.pdf | 3.1A | 8-SMD, Gull Wing | 6.7mm | 1.6mm | 3.7mm | Lead Free | 8 | 17 Weeks | No SVHC | 210mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | DUAL | 260 | ZXMHC3A01T8 | 8 | 30 | 1.7W | 4 | 2.3ns | 2.3 ns | 12.1 ns | 3.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 2.7A | 2 N and 2 P-Channel (H-Bridge) | 190pF @ 25V | 120m Ω @ 2.5A, 10V | 3V @ 250μA | 2.7A 2A | 3.9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| CSD86350Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 5mm | 1.5mm | 6mm | Contains Lead | 9 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.5mm | EAR99 | Gold, Tin | No | 1 | e3 | Matte Tin (Sn) | 13W | 260 | 1.27mm | CSD86350 | 9 | SWITCHING REGULATOR | Dual | 13W | 40mA | 1.3V | 9 ns | 23ns | 21 ns | 24 ns | 40A | 8V | 25V | 1.4V | 12V | 22V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 25V | 2 N-Channel (Half Bridge) | 1870pF @ 12.5V | 1.3 V | 6m Ω @ 20A, 8V | 2.1V @ 250μA | 10.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| DMN65D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn65d8ldw7-datasheets-7571.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 6 | 15 Weeks | 6.010099mg | No SVHC | 6Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 300mW | GULL WING | 260 | DMN65D8LDW | 6 | 40 | 300mW | 2 | FET General Purpose Powers | 150°C | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 180mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.15A | 60V | 2 N-Channel (Dual) | 22pF @ 25V | 6 Ω @ 115mA, 10V | 2V @ 250μA | 0.87nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SSM6N37FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 20V | 300mW | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 250mA Ta | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm6n7002kfulf-datasheets-7489.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | AEC-Q101 | 285mW | GULL WING | 2 | R-PDSO-G6 | 300mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.3A | 1.75Ohm | 2 N-Channel (Dual) | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3190LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3190ldw7-datasheets-3156.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | 6 | 15 Weeks | 6 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 320mW | GULL WING | 260 | 6 | 30 | 2 | 4.5 ns | 8.9ns | 15.6 ns | 30.3 ns | 1A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.19Ohm | 2 N-Channel (Dual) | 87pF @ 20V | 190m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMHC6A07T8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/diodesincorporated-zxmhc6a07t8ta-datasheets-7355.pdf | 60V | 1.8A | 8-SMD, Gull Wing | 6.7mm | 1.6mm | 3.7mm | Lead Free | 8 | 17 Weeks | No SVHC | 425mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.7W | DUAL | 260 | ZXMHC6A07T8 | 8 | 4 | 40 | 1.7W | 4 | 2.2A | 1.6 ns | 2.3ns | 5.8 ns | 13 ns | 1.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 1.3W | 60V | 2 N and 2 P-Channel (H-Bridge) | 166pF @ 40V | 300m Ω @ 1.8A, 10V | 3V @ 250μA | 1.6A 1.3A | 3.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NX3020NAKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx3020naks115-datasheets-7656.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 375mW | GULL WING | 6 | 2 | Dual | 375mW | 2 | 5 ns | 5ns | 17 ns | 34 ns | 180mA | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.18A | 2 N-Channel (Dual) | 13pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 0.44nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN63D8LV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmn63d8lv7-datasheets-7666.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 450mW | FLAT | 260 | DMN63D8L | Dual | 30 | 450mW | 2 | FET General Purpose Power | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 260mA | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 4.5Ohm | 30V | 2 N-Channel (Dual) | 22pF @ 25V | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 0.87nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMC3400SDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc3400sdw13-datasheets-7674.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | 6 | EAR99 | e3 | Matte Tin (Sn) | 310mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 450mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.4Ohm | N and P-Channel | 55pF @ 15V | 400m Ω @ 590mA, 10V | 1.6V @ 250μA | 650mA 450mA | 1.4nC @ 10V | Standard |
