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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | FET Technology | Threshold Voltage | Power - Max | Recovery Time | Output Current-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| NTHC5513T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthc5513t1g-datasheets-6522.pdf | 20V | 3.1A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 4.535924g | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 1.1W | C BEND | 260 | NTHC5513 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 7 ns | 13ns | 33 ns | 3.9A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 10A | -20V | N and P-Channel | 180pF @ 10V | 600 mV | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A 2.2A | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SIA537EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia537edjt1ge3-datasheets-6486.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | e3 | Matte Tin (Sn) - annealed | 7.8W | C BEND | NOT SPECIFIED | SIA537 | 2 | NOT SPECIFIED | 2 | 15 ns | 15ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 1V | -20V | N and P-Channel | 455pF @ 6V | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN2016LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn2016lfg7-datasheets-6549.pdf | 8-PowerUDFN | Lead Free | 5 | 16 Weeks | No SVHC | 18mOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 770mW | 260 | DMN2016L | 2 | Dual | 40 | 2 | FET General Purpose Power | S-PDSO-N5 | 2.6 ns | 13.2ns | 46.8 ns | 84.5 ns | 5.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Common Drain | 1472pF @ 10V | 18m Ω @ 6A, 4.5V | 1.1V @ 250μA | 16nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| US6J2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-us6j2tr-datasheets-6579.pdf | -20V | -1A | 6-SMD, Flat Leads | Lead Free | 6 | 10 Weeks | 390MOhm | 6 | yes | EAR99 | No | e2 | TIN COPPER | 1W | 260 | *J2 | 6 | Dual | 10 | 1W | 2 | Other Transistors | 9 ns | 8ns | 10 ns | 25 ns | 1A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1A | -20V | 2 P-Channel (Dual) | 150pF @ 10V | 390m Ω @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| CMLDM7585 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7585trpbfree-datasheets-6447.pdf | SOT-563, SOT-666 | 24 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.65A | N and P-Channel | 100pF @ 16V | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 650mA | 1.58nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC6040SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmc6040ssd13-datasheets-6618.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.24W | DUAL | GULL WING | 260 | 2 | 30 | 2 | 3.7 ns | 6.3ns | 26.1 ns | 58.7 ns | 3.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 5.1A | 0.04Ohm | -60V | N and P-Channel | 1130pF @ 15V | 40m Ω @ 8A, 10V | 3V @ 250μA | 5.1A 3.1A | 20.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDME1023PZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdme1023pzt-datasheets-6593.pdf | 6-UFDFN Exposed Pad | 1.6mm | 500μm | 1.6mm | 6 | 16 Weeks | 25.2mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTION | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | Dual | 1.3W | 2 | Other Transistors | 4.7 ns | 4.8ns | 16 ns | 33 ns | 2.6A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -600mV | 600mW | 75 pF | -20V | 2 P-Channel (Dual) | 405pF @ 10V | -600 mV | 142m Ω @ 2.3A, 4.5V | 1V @ 250μA | 7.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| DMC3021LK4-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc3021lk413-datasheets-6518.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 4 | 15 Weeks | 3.949996g | No SVHC | 5 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2.7W | SINGLE | GULL WING | 260 | DMC3021 | 4 | 2 | 40 | 2 | Other Transistors | R-PSSO-G4 | 2.5 ns | 6.6ns | 6.3 ns | 19 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.7A | 40A | 30V | N and P-Channel, Common Drain | 751pF @ 10V | 21m Ω @ 7A, 10V | 2.1V @ 250μA | 9.4A 6.8A | 17.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/diodesincorporated-dmp2100ufu7-datasheets-6328.pdf | 6-UFDFN Exposed Pad | 15 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 900mW | NOT SPECIFIED | NOT SPECIFIED | 5.7A | 20V | 900mW | 2 P-Channel (Dual) | 906pF @ 10V | 38m Ω @ 3.5A, 10V | 1.4V @ 250μA | 21.4nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6M1T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/rohmsemiconductor-em6m1t2r-datasheets-6247.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | FLAT | 260 | 6M1 | 6 | Dual | 10 | 150mW | 2 | Other Transistors | 200mA | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 8Ohm | 30V | N and P-Channel | 13pF @ 5V | 8 Ω @ 10mA, 4V | 100mA 200mA | 0.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7003TG TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7003ttr-datasheets-1403.pdf | SOT-563, SOT-666 | 42 Weeks | YES | FET General Purpose Power | 0.35W | 50V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.28A | 2 N-Channel (Dual) | 50pF @ 25V | 1.5 Ω @ 50mA, 5V | 1.2V @ 250μA | 280mA | 0.76nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1035X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1035xt1ge3-datasheets-6271.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 8Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1035 | 6 | 30 | 250mW | 2 | Other Transistors | 180mA | 5V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | N and P-Channel | 5 Ω @ 200mA, 4.5V | 400mV @ 250μA (Min) | 180mA 145mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| NTJD4105CT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 8 Weeks | 220mOhm | 6 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4105C | 6 | Dual | 40 | 270mW | 2 | Other Transistors | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| DMC2004VK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc2004vk7-datasheets-6300.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 19 Weeks | 3.005049mg | No SVHC | 900mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 400mW | DUAL | FLAT | 260 | DMC2004VK | 6 | 2 | 40 | 1W | 2 | Other Transistors | 670mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 450mW | 20V | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 670mA 530mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| FDG6308P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdg6308p-datasheets-6256.pdf | -20V | -600mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | 400MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 5 ns | 15ns | 15 ns | 7 ns | 600mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 153pF @ 10V | 400m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI1965DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 390mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | 2 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 10 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | -12V | 2 P-Channel (Dual) | 120pF @ 6V | -400 mV | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| IRFI4020H-117P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfi4020h117p-datasheets-6348.pdf | TO-220-5 Full Pack | 10.6172mm | 9.02mm | 4.826mm | Lead Free | 5 | 12 Weeks | No SVHC | 100MOhm | 5 | EAR99 | No | 21W | SINGLE | Dual | 21W | 2 | FET General Purpose Power | 8.4 ns | 8ns | 4 ns | 18 ns | 9.1A | 20V | SILICON | DRAIN | AMPLIFIER | 200V | METAL-OXIDE SEMICONDUCTOR | 4.9V | 110 ns | 36A | 130 mJ | 200V | 2 N-Channel (Dual) | 1240pF @ 25V | 4.9 V | 100m Ω @ 5.5A, 10V | 4.9V @ 100μA | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| NVJD4401NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 4 Weeks | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | 6 | Dual | 550mW | 2 | FET General Purpose Power | 83 ns | 227ns | 506 ns | 786 ns | 910mA | 12V | METAL-OXIDE SEMICONDUCTOR | 0.91A | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG8601UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg8601ufg7-datasheets-6381.pdf | 8-PowerUDFN | Lead Free | 5 | 16 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | Gold | e4 | 920mW | NO LEAD | 260 | DMG8601UFG | 8 | 2 | 40 | 2 | FET General Purpose Powers | Not Qualified | R-PDSO-N5 | 53 ns | 78ns | 234 ns | 562 ns | 6.1A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Common Drain | 143pF @ 10V | 23m Ω @ 6.5A, 4.5V | 1.05V @ 250μA | 8.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| QS6K21TR | ROHM Semiconductor | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-qs6k21tr-datasheets-6390.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | 6 | yes | EAR99 | No | e1 | 1.25W | GULL WING | *K21 | 6 | Dual | 1.25W | 2 | FET General Purpose Power | 6 ns | 8ns | 8 ns | 16 ns | 1A | 12V | SILICON | SWITCHING | 45V | METAL-OXIDE SEMICONDUCTOR | 1A | 300mOhm | 45V | 2 N-Channel (Dual) | 1.5V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI1902DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 270mW | GULL WING | SI1902 | 6 | Dual | 270mW | 2 | 10 ns | 16ns | 10 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.385Ohm | 2 N-Channel (Dual) | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLUD3A260PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntlud3a260pztbg-datasheets-1373.pdf | 6-UFDFN Exposed Pad | 1.6mm | 500μm | 1.6mm | Lead Free | 6 | 8 Weeks | 6 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | Tin | No | e3 | YES | 500mW | 6 | Dual | 800mW | 2 | Other Transistors | 17.4 ns | 32.3ns | 74 ns | 149 ns | 1.7A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 2 P-Channel (Dual) | 300pF @ 10V | 200m Ω @ 2A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| CSD85302L | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 4-XFLGA | 1.35mm | 1.35mm | Lead Free | 4 | 6 Weeks | 4 | ACTIVE (Last Updated: 5 days ago) | yes | 200μm | EAR99 | 1.7W | BOTTOM | NO LEAD | CSD85302 | 2 | 37 ns | 54ns | 99 ns | 173 ns | 7A | 10V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 79 pF | 2 N-Channel (Dual) Common Drain | 7.8nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FC6546010R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fc6546010r-datasheets-6053.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.25mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | 8541.21.00.95 | 150mW | NOT SPECIFIED | FC654601 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.1A | 15Ohm | 60V | 2 N-Channel (Dual) | 12pF @ 3V | 1.2 V | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002VA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-2n7002v-datasheets-1455.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 32mg | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 250mW | FLAT | Dual | 250mW | 2 | FET General Purpose Power | 5.85 ns | 12.5 ns | 280mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 7 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD88584Q5DCT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22-PowerTFDFN | 6mm | 5mm | 22 | 8 Weeks | 22 | ACTIVE (Last Updated: 2 days ago) | yes | 850μm | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 10V | CSD88584 | 16V | 4.5V | BRUSHLESS DC MOTOR CONTROLLER | NOT SPECIFIED | 40V | 12W | 50A | 2 N-Channel (Half Bridge) | 12400pF @ 20V | 0.95m Ω @ 30A, 10V | 2.3V @ 250μA | 88nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDT670UPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt670upe115-datasheets-6056.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 330mW | FLAT | 6 | 390mW | 2 | 18 ns | 30ns | 72 ns | 80 ns | 550mA | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.55A | 0.85Ohm | 2 P-Channel (Dual) | 87pF @ 10V | 850m Ω @ 400mA, 4.5V | 1.3V @ 250μA | 1.14nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD5121NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvjd5121nt1g-datasheets-9702.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 8 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW THRESHOLD | No | e3 | Tin (Sn) | YES | 250mW | GULL WING | NTJD5121N | 6 | Dual | 250mW | 2 | FET General Purpose Power | 22 ns | 34ns | 32 ns | 34 ns | 295mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.7V | 60V | 2 N-Channel (Dual) | 26pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| UM6K31NFHATCN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2016 | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | Unknown | 6 | EAR99 | not_compliant | 150mW | NOT SPECIFIED | NOT SPECIFIED | 250mA | 60V | 2.3V | 2 N-Channel (Dual) | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN53D0LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn53d0ldw13-datasheets-5922.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 310mW | 260 | 2 | Dual | 30 | 2.7 ns | 2.5ns | 11 ns | 19 ns | 360mA | 20V | 50V | 50V | 2 N-Channel (Dual) | 46pF @ 25V | 1.6 Ω @ 500mA, 10V | 1.5V @ 250μA | 0.6nC @ 4.5V | Logic Level Gate |
