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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| CJ3139KDW-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/comchiptechnology-cj3139kdwg-datasheets-6143.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | yes | 150mW | NOT SPECIFIED | NOT SPECIFIED | 660mA | 20V | 2 P-Channel (Dual) | 170pF @ 16V | 520m Ω @ 1A, 4.5V | 1.1V @ 250μA | 660mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L61NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Base | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 6 | 12 Weeks | unknown | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.033Ohm | N and P-Channel | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7484 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7484trpbfree-datasheets-6432.pdf | SOT-563, SOT-666 | 24 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | 30V | METAL-OXIDE SEMICONDUCTOR | 150mW | 0.45A | N and P-Channel Complementary | 45pF @ 25V | 460m Ω @ 200mA, 4.5V | 1V @ 250μA | 450mA | 0.79nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTZD3154NT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntzd3154nt1g-datasheets-3038.pdf | 20V | 540mA | SOT-563, SOT-666 | Lead Free | 6 | 10 Weeks | 400MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 250mW | FLAT | 260 | NTZD3154N | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 6 ns | 4ns | 4 ns | 16 ns | 540mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.54A | 20 pF | 20V | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||
| QS6J11TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-qs6j11tr-datasheets-6460.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 8 | 20 Weeks | 6 | yes | EAR99 | No | e1 | 600mW | GULL WING | 260 | *J11 | 6 | 2 | Dual | 10 | 1 | Other Transistors | R-PDSO-G8 | 10 ns | 17ns | 35 ns | 65 ns | 2A | 10V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 2A | 8A | 0.105Ohm | 2 P-Channel (Dual) | 770pF @ 6V | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 150mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 2 | 30 | 1.7W | 2 | 4A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 20V | N and P-Channel | 285pF @ 10V | 600 mV | 55m Ω @ 4.4A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTHC5513T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthc5513t1g-datasheets-6522.pdf | 20V | 3.1A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 4.535924g | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 1.1W | C BEND | 260 | NTHC5513 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 7 ns | 13ns | 33 ns | 3.9A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 10A | -20V | N and P-Channel | 180pF @ 10V | 600 mV | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A 2.2A | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIA537EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia537edjt1ge3-datasheets-6486.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | e3 | Matte Tin (Sn) - annealed | 7.8W | C BEND | NOT SPECIFIED | SIA537 | 2 | NOT SPECIFIED | 2 | 15 ns | 15ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 1V | -20V | N and P-Channel | 455pF @ 6V | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NVJD4401NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 4 Weeks | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | 6 | Dual | 550mW | 2 | FET General Purpose Power | 83 ns | 227ns | 506 ns | 786 ns | 910mA | 12V | METAL-OXIDE SEMICONDUCTOR | 0.91A | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMG8601UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg8601ufg7-datasheets-6381.pdf | 8-PowerUDFN | Lead Free | 5 | 16 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | Gold | e4 | 920mW | NO LEAD | 260 | DMG8601UFG | 8 | 2 | 40 | 2 | FET General Purpose Powers | Not Qualified | R-PDSO-N5 | 53 ns | 78ns | 234 ns | 562 ns | 6.1A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Common Drain | 143pF @ 10V | 23m Ω @ 6.5A, 4.5V | 1.05V @ 250μA | 8.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| QS6K21TR | ROHM Semiconductor | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-qs6k21tr-datasheets-6390.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | 6 | yes | EAR99 | No | e1 | 1.25W | GULL WING | *K21 | 6 | Dual | 1.25W | 2 | FET General Purpose Power | 6 ns | 8ns | 8 ns | 16 ns | 1A | 12V | SILICON | SWITCHING | 45V | METAL-OXIDE SEMICONDUCTOR | 1A | 300mOhm | 45V | 2 N-Channel (Dual) | 1.5V @ 1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SI1902DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 270mW | GULL WING | SI1902 | 6 | Dual | 270mW | 2 | 10 ns | 16ns | 10 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.385Ohm | 2 N-Channel (Dual) | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| NTLUD3A260PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntlud3a260pztbg-datasheets-1373.pdf | 6-UFDFN Exposed Pad | 1.6mm | 500μm | 1.6mm | Lead Free | 6 | 8 Weeks | 6 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | Tin | No | e3 | YES | 500mW | 6 | Dual | 800mW | 2 | Other Transistors | 17.4 ns | 32.3ns | 74 ns | 149 ns | 1.7A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 2 P-Channel (Dual) | 300pF @ 10V | 200m Ω @ 2A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| CSD85302L | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 4-XFLGA | 1.35mm | 1.35mm | Lead Free | 4 | 6 Weeks | 4 | ACTIVE (Last Updated: 5 days ago) | yes | 200μm | EAR99 | 1.7W | BOTTOM | NO LEAD | CSD85302 | 2 | 37 ns | 54ns | 99 ns | 173 ns | 7A | 10V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 79 pF | 2 N-Channel (Dual) Common Drain | 7.8nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/diodesincorporated-dmp2100ufu7-datasheets-6328.pdf | 6-UFDFN Exposed Pad | 15 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 900mW | NOT SPECIFIED | NOT SPECIFIED | 5.7A | 20V | 900mW | 2 P-Channel (Dual) | 906pF @ 10V | 38m Ω @ 3.5A, 10V | 1.4V @ 250μA | 21.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6M1T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/rohmsemiconductor-em6m1t2r-datasheets-6247.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | FLAT | 260 | 6M1 | 6 | Dual | 10 | 150mW | 2 | Other Transistors | 200mA | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 8Ohm | 30V | N and P-Channel | 13pF @ 5V | 8 Ω @ 10mA, 4V | 100mA 200mA | 0.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7003TG TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7003ttr-datasheets-1403.pdf | SOT-563, SOT-666 | 42 Weeks | YES | FET General Purpose Power | 0.35W | 50V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.28A | 2 N-Channel (Dual) | 50pF @ 25V | 1.5 Ω @ 50mA, 5V | 1.2V @ 250μA | 280mA | 0.76nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1035X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1035xt1ge3-datasheets-6271.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 8Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1035 | 6 | 30 | 250mW | 2 | Other Transistors | 180mA | 5V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | N and P-Channel | 5 Ω @ 200mA, 4.5V | 400mV @ 250μA (Min) | 180mA 145mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTJD4105CT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 8 Weeks | 220mOhm | 6 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4105C | 6 | Dual | 40 | 270mW | 2 | Other Transistors | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| DMC2004VK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc2004vk7-datasheets-6300.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 19 Weeks | 3.005049mg | No SVHC | 900mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 400mW | DUAL | FLAT | 260 | DMC2004VK | 6 | 2 | 40 | 1W | 2 | Other Transistors | 670mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 450mW | 20V | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 670mA 530mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| FDG6308P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdg6308p-datasheets-6256.pdf | -20V | -600mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | 400MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 5 ns | 15ns | 15 ns | 7 ns | 600mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 153pF @ 10V | 400m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI1965DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 390mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | 2 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 10 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | -12V | 2 P-Channel (Dual) | 120pF @ 6V | -400 mV | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| IRFI4020H-117P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfi4020h117p-datasheets-6348.pdf | TO-220-5 Full Pack | 10.6172mm | 9.02mm | 4.826mm | Lead Free | 5 | 12 Weeks | No SVHC | 100MOhm | 5 | EAR99 | No | 21W | SINGLE | Dual | 21W | 2 | FET General Purpose Power | 8.4 ns | 8ns | 4 ns | 18 ns | 9.1A | 20V | SILICON | DRAIN | AMPLIFIER | 200V | METAL-OXIDE SEMICONDUCTOR | 4.9V | 110 ns | 36A | 130 mJ | 200V | 2 N-Channel (Dual) | 1240pF @ 25V | 4.9 V | 100m Ω @ 5.5A, 10V | 4.9V @ 100μA | 29nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| PMDXB1200UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmdxb1200upez-datasheets-6170.pdf | 6-XFDFN Exposed Pad | 4 Weeks | 285mW | NOT SPECIFIED | 6 | NOT SPECIFIED | 410mA | 30V | 285mW | 2 P-Channel (Dual) | 43.2pF @ 15V | 1.4 Ω @ 410mA, 4.5V | 950mV @ 250μA | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG6318PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdg6318pz-datasheets-6196.pdf | -20V | -500mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | 780MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 300mW | GULL WING | 260 | Dual | 30 | 300mW | 2 | Other Transistors | 10 ns | 13ns | 13 ns | 40 ns | 500mA | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | -20V | 2 P-Channel (Dual) | 85.4pF @ 10V | 780m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.62nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| DMC2004LPK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc2004lpk7-datasheets-6208.pdf | 6-SMD, No Lead | 1.6mm | 480μm | 1.2mm | 6 | 16 Weeks | 21.092045mg | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 500mW | BOTTOM | 260 | 6 | 40 | 500mW | 2 | Other Transistors | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.75A | 0.55Ohm | 20V | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 750mA 600mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4816BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18.5mOhm | 8 | EAR99 | Tin | No | e3 | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 30 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 1W 1.25W | 2 N-Channel (Half Bridge) | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| DMP58D0SV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmp58d0sv7-datasheets-6215.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 19 Weeks | 3.005049mg | No SVHC | 8Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 400mW | FLAT | 260 | 6 | Dual | 40 | 400mW | 2 | Other Transistors | 160mA | 20V | SILICON | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 27pF @ 25V | 8 Ω @ 100mA, 5V | 2.1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SQJ963EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqj963ept1ge3-datasheets-5777.pdf | PowerPAK® SO-8 Dual | 12 Weeks | 8 | No | 27W | 2 | Dual | 27W | 2 | PowerPAK® SO-8 Dual | 11 ns | 13ns | 8 ns | 36 ns | 8A | 20V | 60V | 27W Tc | 115mOhm | 2 P-Channel (Dual) | 1140pF @ 30V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 8A Tc | 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FC6546010R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fc6546010r-datasheets-6053.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.25mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | 8541.21.00.95 | 150mW | NOT SPECIFIED | FC654601 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.1A | 15Ohm | 60V | 2 N-Channel (Dual) | 12pF @ 3V | 1.2 V | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | Logic Level Gate |
