Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NDM3000 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ndm3000-datasheets-3000.pdf | 16-SOIC (0.154, 3.90mm Width) | 16 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 16 | NOT SPECIFIED | 6 | COMMERCIAL | R-PDSO-G16 | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 3A | 0.16Ohm | 3 N and 3 P-Channel (3-Phase Bridge) | 360pF @ 10V | 90m Ω @ 3A, 10V | 3V @ 250μA | 3A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF8MR12W2M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-ff8mr12w2m1b11boma1-datasheets-3170.pdf | Module | 16 Weeks | 1200V | 20mW Tc | 2 N-Channel (Dual) | 11000pF @ 800V | 7.5m Ω @ 150A, 15V (Typ) | 5.55V @ 60mA | 150A Tj | 372nC @ 15V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1116PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1116pal-datasheets-3009.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | 500mW | 8-PDIP | 4.8mA | 13.2V | 10.6V | 500mW | 350Ohm | 12V | 2 N-Channel (Dual) Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM300D12P2E001 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | Module | 11 | 25 Weeks | EAR99 | not_compliant | 1.875kW | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XUFM-X11 | 300A | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 1875W | 600A | 2 N-Channel (Half Bridge) | 35000pF @ 10V | 4V @ 68mA | 300A Tc | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0910NDXTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-bsz0910ndxtma1-datasheets-2866.pdf | 8-PowerVDFN | 4 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.9W Ta 31W Tc | 2 N-Channel (Dual) | 800pF @ 15V | 9.5m Ω @ 9A, 10V | 2V @ 250μA | 9.5A Ta 25A Tc | 5.6nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD212900PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald212900pal-datasheets-3035.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 500mW | 8-PDIP | 30pF | 80mA | 10.6V | 500mW | 2 N-Channel (Dual) Matched Pair | 30pF @ 5V | 14Ohm | 20mV @ 20μA | 80mA | Logic Level Gate | 14 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C87NT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntmfd4c87nt1g-datasheets-3046.pdf | 8-PowerTDFN | 8-DFN (5x6) | 30V | 1.1W | 2 N-Channel (Dual) Asymmetrical | 1252pF @ 15V | 5.4mOhm @ 30A, 10V | 2.2V @ 250μA | 11.7A 14.9A | 22.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD114904SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114904sal-datasheets-3047.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 3.6V | 360mV @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87313DMST | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerWDFN | 3.3mm | 3.3mm | 6 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 750μm | AVALANCHE RATED | YES | NO LEAD | CSD87313 | 2 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.7W | 5.5mOhm | 200 pF | 67 mJ | 2 N-Channel (Dual) Common Drain | 4290pF @ 15V | 1.2V @ 250μA | 28nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1101SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1101asal-datasheets-9948.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 40mA | 13.2V | 10.6V | 500mW | 75Ohm | -12V | 2 N-Channel (Dual) Matched Pair | 75Ohm @ 5V | 1V @ 10μA | Standard | 75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI4212H-117P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfi4212h117p-datasheets-3065.pdf | TO-220-5 Full Pack | 10.67mm | 9.02mm | 4.83mm | Lead Free | 5 | 12 Weeks | No SVHC | 72.5MOhm | 5 | EAR99 | No | 18W | SINGLE | Dual | 18W | 2 | FET General Purpose Power | 4.7 ns | 8.3ns | 4.3 ns | 9.5 ns | 11A | 20V | SILICON | ISOLATED | AMPLIFIER | 100V | METAL-OXIDE SEMICONDUCTOR | 5V | 54 ns | 44A | 41 mJ | 100V | 2 N-Channel (Dual) | 490pF @ 50V | 5 V | 72.5m Ω @ 6.6A, 10V | 5V @ 250μA | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| CSD87384MT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5-LGA | 5mm | 3.5mm | Lead Free | 5 | 12 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | 400μm | EAR99 | Gold | e4 | 8W | BOTTOM | NO LEAD | 260 | CSD87384 | NOT SPECIFIED | 2 | 30A | SILICON | COMPLEX | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 8W | 0.0089Ohm | 114 pF | 231 mJ | 2 N-Channel (Half Bridge) | 1150pF @ 15V | 7.7m Ω @ 25A, 8V | 1.9V @ 250μA | 9.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| FF23MR12W1M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | Tray | Not Applicable | ROHS3 Compliant | 2008 | /files/infineontechnologies-ff23mr12w1m1b11boma1-datasheets-3094.pdf | Module | 12.35mm | 16 Weeks | EAR99 | AG-EASY1BM-2 | 2 | 20mW | 150°C | 12 ns | 43.5 ns | 50A | 1200V 1.2kV | 2 N-Channel (Dual) | 3950pF @ 800V | 23m Ω @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FD6M045N06 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Power-SPM™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fd6m045n06-datasheets-3107.pdf | EPM15 | 15 | unknown | NO | ZIG-ZAG | 15 | 2 | COMMERCIAL | R-PZIP-T15 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.0045Ohm | 794 mJ | 2 N-Channel (Dual) | 3890pF @ 25V | 4.5m Ω @ 40A, 10V | 4V @ 250μA | 60A | 87nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM180D12P2C101 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-bsm180d12p2c101-datasheets-3118.pdf | Module | 122mm | 21.1mm | 45.6mm | 8 | 25 Weeks | No SVHC | 10 | not_compliant | 1.13kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 1 | NOT SPECIFIED | 2 | R-XUFM-X8 | 180A | 22V | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 2.7V | 1130W | 360A | 2 N-Channel (Half Bridge) | 23000pF @ 10V | 2.7 V | 4V @ 35.2mA | 204A Tc | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM180D12P3C007 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | Module | 10 | 25 Weeks | EAR99 | not_compliant | NO | 880W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | R-XUFM-X10 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 180A | 360A | 2 N-Channel (Dual) | 900pF @ 10V | 5.6V @ 50mA | 180A Tc | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C85NT1G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-ntmfd4c85nt1g-datasheets-2998.pdf | 8-PowerTDFN | 8-DFN (5x6) | 30V | 1.13W | 2 N-Channel (Dual) Asymmetrical | 1960pF @ 15V | 3mOhm @ 20A, 10V | 2.1V @ 250μA | 15.4A 29.7A | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7104TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7104trpbf-datasheets-2453.pdf | -20V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 250mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7104PBF | Dual | 2W | 2 | 12 ns | 16ns | 30 ns | 42 ns | -2.3A | 12V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | -3V | 100 ns | 10A | -20V | 2 P-Channel (Dual) | 290pF @ 15V | -3 V | 250m Ω @ 1A, 10V | 3V @ 250μA | 2.3A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDMS7606 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fdms7606-datasheets-2815.pdf | 8-PowerWDFN | Power56 | 30V | 1W | 2 N-Channel (Dual) | 1400pF @ 15V | 11.4mOhm @ 11.5A, 10V | 3V @ 250μA | 11.5A 12A | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2791GR-E1-AT | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa2791gre1at-datasheets-2831.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | 2W | N and P-Channel | 400pF @ 10V | 36mOhm @ 3A, 10V | 2.5V @ 1mA | 5A | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0993NDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0993ndatma1-datasheets-2851.pdf | 8-PowerTDFN | 6 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 17A | 68A | 0.007Ohm | 14 mJ | 2 N-Channel | 5m Ω @ 7A, 10V | 2V @ 250μA | 17A Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0909NDXTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0909ndxtma1-datasheets-2871.pdf | 8-PowerVDFN | 8 | 4 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N8 | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 17W | 4.1A | 40A | 0.025Ohm | 4 mJ | 2 N-Channel (Dual) | 360pF @ 15V | 18m Ω @ 9A, 10V | 2V @ 250μA | 20A Tc | 2.6nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7317TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7317trpbf-datasheets-2708.pdf | 6.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 29mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | DUAL | GULL WING | IRF7317PBF | 2W | 2 | 40ns | 49 ns | 42 ns | 6.6A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 700mV | 100 mJ | 20V | N and P-Channel | 900pF @ 15V | 700 mV | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 6.6A 5.3A | 27nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| AUIRF7341QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7341qtr-datasheets-2907.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | 2.4W | GULL WING | Dual | 2.4W | 2 | FET General Purpose Power | 9.2 ns | 7.7ns | 12.5 ns | 31 ns | 5.1A | 20V | SILICON | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.05Ohm | 140 mJ | 55V | 2 N-Channel (Dual) | 780pF @ 25V | 50m Ω @ 5.1A, 10V | 3V @ 250μA | 44nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7905TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7905trpbf-datasheets-2571.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7905PBF | Dual | 2W | 2 | FET General Purpose Power | 3.4 ns | 8.9A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 71A | 0.0171Ohm | 30V | 2 N-Channel (Dual) | 600pF @ 15V | 21.8m Ω @ 7.8A, 10V | 2.25V @ 25μA | 7.8A 8.9A | 6.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S408ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n04s408atma1-datasheets-2924.pdf | 8-PowerVDFN | 8 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 65W | 20A | 80A | 0.0076Ohm | 230 mJ | 2 N-Channel (Dual) | 2940pF @ 25V | 7.6m Ω @ 17A, 10V | 4V @ 30μA | 20A | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8947A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds8947a-datasheets-2943.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 900mW | 4A | 20A | 0.052Ohm | 2 P-Channel (Dual) | 730pF @ 15V | 52m Ω @ 4A, 10V | 3V @ 250μA | 4A | 27nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDW2504P | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw2504p-datasheets-2945.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | EAR99 | unknown | 8541.29.00.95 | e3 | TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 600mW | MO-153AA | 3.8A | 0.043Ohm | 2 P-Channel (Dual) | 1030pF @ 10V | 43m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 3.8A | 16nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C88NT1G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntmfd4c88nt1g-datasheets-2948.pdf | 8-PowerTDFN | 8-DFN (5x6) | 30V | 1.1W | 2 N-Channel (Dual) Asymmetrical | 1252pF @ 15V | 5.4mOhm @ 10A, 10V | 2.2V @ 250μA | 11.7A 14.2A | 22.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C86NT1G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-ntmfd4c86nt1g-datasheets-2955.pdf | 8-PowerTDFN | 8-DFN (5x6) | 30V | 1.1W | 2 N-Channel (Dual) Asymmetrical | 1153pF @ 15V | 5.4mOhm @ 30A, 10V | 2.2V @ 250μA | 11.3A 18.1A | 22.2nC @ 10V | Standard |
