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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SQJ968EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj968ept1ge3-datasheets-4319.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 8 | EAR99 | 25W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 25W | 2 | R-PSSO-G4 | 18A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 42W Tc | 0.0336Ohm | 4 mJ | 2 N-Channel (Dual) | 714pF @ 30V | 33.6m Ω @ 4.8A, 10V | 2.5V @ 250μA | 23.5A Tc | 18.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| SQ4940AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq4940aeyt1ge3-datasheets-4275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 506.605978mg | EAR99 | unknown | 4W | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G8 | 8 ns | 13ns | 9 ns | 20 ns | 8A | 20V | SILICON | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 8A | 55 pF | 2 N-Channel (Dual) | 741pF @ 20V | 24m Ω @ 5.3A, 10V | 2.5V @ 250μA | 43nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI7980DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7980dpt1ge3-datasheets-4445.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 12 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 21.9W | C BEND | 260 | SI7980 | 8 | 2 | Dual | 30 | 3.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 18 ns | 18ns | 10 ns | 25 ns | 8A | 16V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 19.8W 21.9W | 8A | 30A | 20V | 2 N-Channel (Half Bridge) | 1010pF @ 10V | 22m Ω @ 5A, 10V | 2.5V @ 250μA | 27nC @ 10V | Standard | |||||||||||||||||||||||||||||
| SIA910EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia910edjt1ge3-datasheets-4467.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 28MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | SIA910E | 6 | 2 | Dual | 40 | 1.9W | 2 | FET General Purpose Powers | 10 ns | 12ns | 12 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | 2 N-Channel (Dual) | 455pF @ 6V | 400 mV | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIA517DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia517djt1ge3-datasheets-4425.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 800μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 6.5W | NO LEAD | 260 | SIA517 | 6 | 2 | 40 | 1.9W | 2 | Other Transistors | Not Qualified | 150°C | 30 ns | 25ns | 25 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | N and P-Channel | 500pF @ 6V | 400 mV | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI4936CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4936cdyt1ge3-datasheets-4603.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 40mOhm | 8 | EAR99 | Tin | No | e3 | 2.3W | GULL WING | 260 | SI4936 | 8 | 30 | 2.3W | 2 | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 5A | 30V | 2 N-Channel (Dual) | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 5.8A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SQ3987EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq3987evt1ge3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.67W | 3A | 0.185Ohm | 74 pF | 2 P-Channel (Dual) | 570pF @ 15V | 133m Ω @ 1.5A, 10V | 2.5V @ 250μA | 3A Tc | 12.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA921EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia921edjt1ge3-datasheets-4545.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 59MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | 6 | Dual | 40 | 1.9W | 2 | Other Transistors | 5 ns | 12ns | 10 ns | 25 ns | -4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 15A | -20V | 2 P-Channel (Dual) | 59m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI3552DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | Unknown | 200mOhm | 6 | No | 1.15W | SI3552 | 2 | Single | 1.15W | 2 | 6-TSOP | 8 ns | 12ns | 7 ns | 12 ns | 51A | 20V | 30V | 1V | 1.15W | 85mOhm | 30V | N and P-Channel | 1 V | 105mOhm @ 2.5A, 10V | 1V @ 250μA (Min) | 2.5A | 3.2nC @ 5V | Logic Level Gate | 105 mΩ | |||||||||||||||||||||||||||||||||||||||
| SI4532CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4532cdyt1ge3-datasheets-4680.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 89mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.78W | DUAL | GULL WING | 260 | SI4532 | 8 | 2 | 30 | 2.78W | 2 | 150°C | 5.5 ns | 13ns | 7.7 ns | 17 ns | 6A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 6A | 30V | N and P-Channel | 305pF @ 15V | 1 V | 47m Ω @ 3.5A, 10V | 3V @ 250μA | 6A 4.3A | 9nC @ 10V | Standard | |||||||||||||||||||||||||||
| SI5515CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 30 | 1.3W | 2 | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 4A | 0.036Ohm | N and P-Channel | 632pF @ 10V | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 11.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | DUAL | GULL WING | 260 | SI3552 | 6 | 2 | 30 | 1.15W | 1 | Other Transistors | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.105Ohm | 30V | N and P-Channel | 1 V | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4590DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4590dyt1ge3-datasheets-5123.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 183mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | 30 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2.4W 3.4W | 5.6A | N and P-Channel | 360pF @ 50V | 57m Ω @ 2A, 10V | 2.5V @ 250μA | 3.4A 2.8A | 11.5nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| SI5504BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 30 | 1.5W | 2 | Other Transistors | 3.7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 1.5 V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7223DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si7223dnt1ge3-datasheets-5177.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | PowerPAK® 1212-8 Dual | 30V | 2.6W Ta 23W Tc | 2 P-Channel (Dual) | 1425pF @ 15V | 26.4mOhm @ 8A, 10V | 2.5V @ 250μA | 6A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ340DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz340dtt1ge3-datasheets-5238.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | 8 | 14 Weeks | Unknown | 8 | EAR99 | No | 31W | 2 | Dual | 2 | 13 ns | 55ns | 7 ns | 16 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 16.7W 31W | 100A | 0.0095Ohm | 5 mJ | 2 N-Channel (Half Bridge) | 760pF @ 15V | 9.5m Ω @ 15.6A, 10V | 2.4V @ 250μA | 30A 40A | 19nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| SQJB00EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb00ept1ge3-datasheets-5369.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 48W | 25A | 84A | 0.013Ohm | 26.5 mJ | 2 N-Channel (Dual) | 1700pF @ 25V | 13m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-E3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 58mOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 40 | 2W | 2 | 10 ns | 15ns | 10 ns | 20 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI6968BEDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | GULL WING | 260 | SI6968 | 8 | 2 | Dual | 40 | 1W | 2 | FET General Purpose Power | 245 ns | 330ns | 510 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 20V | 2 N-Channel (Dual) Common Drain | 600 mV | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI5908DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | C BEND | 260 | SI5908 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 20 ns | 36ns | 36 ns | 30 ns | 5.9A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 4.4A | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 4.4A | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI4564DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si4564dyt1ge3-datasheets-5645.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.2W | DUAL | GULL WING | 260 | SI4564 | 8 | 2 | 40 | 2W | 2 | Other Transistors | 150°C | 42 ns | 40ns | 15 ns | 40 ns | 10A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 800mV | 3.1W 3.2W | 8A | N and P-Channel | 855pF @ 20V | 800 mV | 17.5m Ω @ 8A, 10V | 2V @ 250μA | 10A 9.2A | 31nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||
| SI4599DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4599dyt1ge3-datasheets-5317.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 540.001716mg | Unknown | 45mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | GULL WING | 260 | SI4599 | 8 | 2 | 40 | 3W | 2 | 44 ns | 33ns | 13 ns | 30 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4V | 3W 3.1W | 5.6A | 40V | N and P-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 6.8A 5.8A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| SQJ912AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqj912aept1ge3-datasheets-5421.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | 48W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 120A | 0.0093Ohm | 34 mJ | 2 N-Channel (Dual) | 1835pF @ 20V | 9.3m Ω @ 9.7A, 10V | 2.5V @ 250μA | 38nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7949DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7949dpt1e3-datasheets-8969.pdf | PowerPAK® SO-8 Dual | 6 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.5W | C BEND | 260 | SI7949 | 8 | Dual | 30 | 1.5W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 9ns | 30 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 0.064Ohm | -60V | 2 P-Channel (Dual) | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SQJQ960EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq960elt1ge3-datasheets-5714.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 71W | 175°C | PowerPAK® 8 x 8 Dual | 10 ns | 22 ns | 63A | 20V | 60V | 71W | 7mOhm | 60V | 2 N-Channel (Dual) | 1950pF @ 25V | 9mOhm @ 10A, 10V | 2.5V @ 250μA | 63A Tc | 24nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4816BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18.5mOhm | 8 | EAR99 | Tin | No | e3 | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 30 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 1W 1.25W | 2 N-Channel (Half Bridge) | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SQJ963EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqj963ept1ge3-datasheets-5777.pdf | PowerPAK® SO-8 Dual | 12 Weeks | 8 | No | 27W | 2 | Dual | 27W | 2 | PowerPAK® SO-8 Dual | 11 ns | 13ns | 8 ns | 36 ns | 8A | 20V | 60V | 27W Tc | 115mOhm | 2 P-Channel (Dual) | 1140pF @ 30V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 8A Tc | 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI1035X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1035xt1ge3-datasheets-6271.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 8Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1035 | 6 | 30 | 250mW | 2 | Other Transistors | 180mA | 5V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | N and P-Channel | 5 Ω @ 200mA, 4.5V | 400mV @ 250μA (Min) | 180mA 145mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI1965DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 390mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | 2 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 10 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | -12V | 2 P-Channel (Dual) | 120pF @ 6V | -400 mV | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI1902DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 270mW | GULL WING | SI1902 | 6 | Dual | 270mW | 2 | 10 ns | 16ns | 10 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.385Ohm | 2 N-Channel (Dual) | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate |
