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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI5515CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | No SVHC | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 2 | 30 | 1.3W | 2 | 10 ns | 32ns | 6 ns | 25 ns | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 800mV | 4A | 0.036Ohm | 20V | N and P-Channel | 632pF @ 10V | 800 mV | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 4A Tc | 11.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI4946CDY-T1-GE3 | Vishay Siliconix | $13.64 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4946cdyt1ge3-datasheets-6855.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 14 Weeks | 2 | 2W | 150°C | 8-SO | 8 ns | 16 ns | 5.2A | 20V | 60V | 2W Ta 2.8W Tc | 33mOhm | 60V | 2 N-Channel (Dual) | 350pF @ 30V | 40.9mOhm @ 5.2A, 10V | 3V @ 250μA | 5.2A Ta 6.1A Tc | 10nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4228DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4228dyt1ge3-datasheets-6948.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 18MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4228 | 8 | 2 | Dual | 30 | 2W | 2 | 7 ns | 12ns | 10 ns | 21 ns | 8A | 12V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 8A | 25V | 2 N-Channel (Dual) | 790pF @ 12.5V | 600 mV | 18m Ω @ 7A, 10V | 1.4V @ 250μA | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SIZ730DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz730dtt1ge3-datasheets-7074.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | SIZ730 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 100A | 0.0053Ohm | 45 mJ | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SQJ958EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj958ept1ge3-datasheets-7120.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 35W | 175°C | 5 ns | 18 ns | 20A | 20V | 60V | 2 N-Channel (Dual) | 1075pF @ 30V | 34.9m Ω @ 4.5A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqjb70ept1ge3-datasheets-7304.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 13 ns | 11.3A | 20V | 100V | 27W Tc | 78mOhm | 100V | 2 N-Channel (Dual) | 220pF @ 25V | 95mOhm @ 4A, 10V | 3.5V @ 250μA | 11.3A Tc | 7nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3590DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3590dvt1e3-datasheets-5561.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | DUAL | GULL WING | 260 | SI3590 | 6 | 2 | 30 | 830mW | 2 | Other Transistors | 5 ns | 2A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.077Ohm | 30V | N and P-Channel | 1.5 V | 77m Ω @ 3A, 4.5V | 1.5V @ 250μA | 2.5A 1.7A | 4.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SIZ342DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siz342dtt1ge3-datasheets-7370.pdf | 8-PowerWDFN | 8 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N8 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6W 4.3W | 26.5A | 100A | 0.0115Ohm | 5 mJ | 2 N-Channel (Dual) | 650pF @ 15V | 11.5m Ω @ 14A, 10V | 2.4V @ 250μA | 15.7A Ta 100A Tc | 20nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQJ956EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-sqj956ept1ge3-datasheets-7384.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 60V | 34W | 2 N-Channel (Dual) | 1395pF @ 30V | 26.7mOhm @ 5.2A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4532AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sq4532aeyt1ge3-datasheets-7201.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.3W | 2 | 175°C | R-PDSO-G8 | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7.3A | 0.031Ohm | 53 pF | N and P-Channel | 535pF @ 15V 528pF @ 15V | 31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V | 2.5V @ 250μA | 7.3A Tc 5.3A Tc | 7.8nC @ 10V, 10.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| SIS990DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis990dnt1ge3-datasheets-7450.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | EAR99 | No | 25W | C BEND | 2 | Dual | 2 | FET General Purpose Powers | S-PDSO-C6 | 8 ns | 8ns | 6 ns | 8 ns | 12.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.085Ohm | 100V | 2 N-Channel (Dual) | 250pF @ 50V | 85m Ω @ 8A, 10V | 4V @ 250μA | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SI7228DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7228dnt1ge3-datasheets-7581.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 13 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7228 | 8 | Dual | 30 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 10ns | 10 ns | 15 ns | 8.8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 35A | 30V | 2 N-Channel (Dual) | 480pF @ 15V | 20m Ω @ 8.8A, 10V | 2.5V @ 250μA | 26A | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| SQJ844AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj844aept1ge3-datasheets-7678.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 8A | 30V | 48W | 2 N-Channel (Dual) | 1161pF @ 15V | 16.6m Ω @ 7.6A, 10V | 2.5V @ 250μA | 26nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ320DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siz320dtt1ge3-datasheets-7454.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16.7W 31W | 25V | 2 N-Channel (Dual) | 660pF @ 12.5V 1370pF @ 12.5V | 8.3m Ω @ 8A, 10V, 4.24m Ω @ 10A, 10V | 2.4V @ 250μA | 30A Tc 40A Tc | 8.9nC @ 4.5V, 11.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb80ept1ge3-datasheets-7905.pdf | PowerPAK® SO-8 Dual | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | 48W | 2 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 84A | 0.019Ohm | 80V | 2 N-Channel (Dual) | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ914EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj914ept1ge3-datasheets-7918.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 30V | 27W Tc | 9.8mOhm | 2 N-Channel (Dual) | 1110pF @ 15V | 12mOhm @ 4.5A, 10V | 2.5V @ 250μA | 30A Tc | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7904 | 8 | 2 | Dual | 40 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 17.8W | 6A | 20V | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||
| SQJB42EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb42ept1ge3-datasheets-7973.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.0095Ohm | 31 mJ | 2 N-Channel (Dual) | 1500pF @ 25V | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ980AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj980aept1ge3-datasheets-8013.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 41mOhm | 8 | EAR99 | YES | 34W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 17A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 2V | 34W Tc | 10 mJ | 2 N-Channel (Dual) | 790pF @ 35V | 50m Ω @ 3.8A, 10V | 2.5V @ 250μA | 17A Tc | 21nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| SQJ942EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj942ept1ge3-datasheets-7636.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 17W 48W | 15A | 60A | 0.022Ohm | 18.5 mJ | 2 N-Channel (Dual) | 809pF @ 20V 1451pF @ 20V | 22m Ω @ 7.8A, 10V, 11m Ω @ 10.1A, 10V | 2.3V @ 250μA | 15A Tc 45A Tc | 19.7nC @ 10V, 33.8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ952EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj952ept1ge3-datasheets-7856.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 25W Tc | 2 N-Channel (Dual) | 1800pF @ 30V | 20m Ω @ 10.3A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7900AEDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7900aednt1e3-datasheets-8896.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | C BEND | 260 | SI7900 | 8 | Dual | 40 | 1.5W | 2 | FET General Purpose Power | S-XDSO-C5 | 850 ns | 1.3μs | 1.3 μs | 8.6 μs | 8.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 20V | 2 N-Channel (Dual) Common Drain | 26m Ω @ 8.5A, 4.5V | 900mV @ 250μA | 6A | 16nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI3900DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3900dvt1e3-datasheets-4514.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3900 | 6 | Dual | 30 | 830mW | 2 | 10 ns | 30ns | 6 ns | 14 ns | 2.4A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2A | 20V | 2 N-Channel (Dual) | 125m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2A | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SIZF906DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sizf906dtt1ge3-datasheets-8842.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 38W Tc 83W Tc | 60A | 80A | 0.0038Ohm | 16 mJ | 2 N-Channel (Half Bridge) | 2000pF @ 15V 8200pF @ 15V | 3.8m Ω @ 15A, 10V, 1.17m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 22nC @ 4.5V, 92nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | 2 | Dual | 40 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.5V | 10A | 100V | 2 N-Channel (Dual) | 3.5 V | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||
| SI4904DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 14 Weeks | 186.993455mg | No SVHC | 8 | No | 2W | SI4904 | 2 | Dual | 2W | 2 | 8-SO | 2.39nF | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | 40V | 2V | 3.25W | 16mOhm | 40V | 2 N-Channel (Dual) | 2390pF @ 20V | 16mOhm @ 5A, 10V | 2V @ 250μA | 8A | 85nC @ 10V | Standard | 16 mΩ | |||||||||||||||||||||||||||||||||||||
| SI4943BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4943bdyt1e3-datasheets-9089.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 19mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 40 | 1.1W | 2 | Other Transistors | 11 ns | 10ns | 10 ns | 94 ns | -8.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | -20V | 2 P-Channel (Dual) | -1 V | 19m Ω @ 8.4A, 10V | 3V @ 250μA | 6.3A | 25nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI5504BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 40 | 1.5W | 2 | Other Transistors | 4 ns | 10ns | 5 ns | 10 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||
| SI7949DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7949dpt1e3-datasheets-8969.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 64mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.5W | C BEND | 260 | SI7949 | 8 | Dual | 40 | 1.5W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | -60V | 2 P-Channel (Dual) | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A | 40nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI7956DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 50 ns | 18 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 26nC @ 10V | Logic Level Gate |
