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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5513CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 150mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 2 | 30 | 1.7W | 2 | 4A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 20V | N and P-Channel | 285pF @ 10V | 600 mV | 55m Ω @ 4.4A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIA537EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia537edjt1ge3-datasheets-6486.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | e3 | Matte Tin (Sn) - annealed | 7.8W | C BEND | NOT SPECIFIED | SIA537 | 2 | NOT SPECIFIED | 2 | 15 ns | 15ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 1V | -20V | N and P-Channel | 455pF @ 6V | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI5936DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5936dut1ge3-datasheets-6643.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | 6 | 14 Weeks | 8 | EAR99 | Tin | 2.3W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2.3W | 2 | R-PDSO-N6 | 15 ns | 65ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 10.4W | 6A | 0.03Ohm | 2 N-Channel (Dual) | 320pF @ 15V | 30m Ω @ 5A, 10V | 2.2V @ 250μA | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI7998DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7998dpt1ge3-datasheets-6807.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 9.3mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 40W | C BEND | 260 | 8 | 2 | 30 | 2 | FET General Purpose Power | R-XDSO-C6 | 26 ns | 17ns | 10 ns | 35 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22W 40W | 15A | 60A | 30V | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A 30A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI7288DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7288dpt1ge3-datasheets-6861.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | Unknown | 19mOhm | 8 | yes | EAR99 | Tin | No | PowerPAKSO-8 | e3 | 15.6W | C BEND | 260 | SI7288 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 14ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 10A | 50A | 5 mJ | 40V | 2 N-Channel (Dual) | 565pF @ 20V | 1.2 V | 19m Ω @ 10A, 10V | 2.8V @ 250μA | 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| SI7220DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7220dnt1ge3-datasheets-1978.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7220 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 20 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.4A | 6.1 mJ | 60V | 2 N-Channel (Dual) | 60m Ω @ 4.8A, 10V | 3V @ 250μA | 3.4A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI5948DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5948dut1ge3-datasheets-6607.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 7W | 2 N-Channel (Dual) | 165pF @ 20V | 82m Ω @ 5A, 10V | 2.5V @ 250μA | 6A Tc | 2.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7942DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7942dpt1e3-datasheets-7171.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7942 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 35 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.049Ohm | 2 N-Channel (Dual) | 49m Ω @ 5.9A, 10V | 4V @ 250μA | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI7938DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7938dpt1ge3-datasheets-6952.pdf | PowerPAK® SO-8 Dual | 1.17mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | S17-0173-DUAL | unknown | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7938 | 8 | 2 | Dual | 40 | 3.5W | 2 | FET General Purpose Power | Not Qualified | 150°C | R-XDSO-C6 | 11 ns | 19ns | 15 ns | 33 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 40V | 2 N-Channel (Dual) | 2300pF @ 20V | 2.5 V | 5.8m Ω @ 18.5A, 10V | 2.5V @ 250μA | 65nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| SI7252DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si7252dpt1ge3-datasheets-7360.pdf | PowerPAK® SO-8 Dual | 1.12mm | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | SI7252 | Dual | 3.5W | 2 | 150°C | R-PDSO-C6 | 12 ns | 12ns | 7 ns | 18 ns | 36.7A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.017Ohm | 100V | 2 N-Channel (Dual) | 1170pF @ 50V | 18m Ω @ 15A, 10V | 3.5V @ 250μA | 27nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI7942DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7942dpt1e3-datasheets-7171.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 49mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7942 | 8 | 2 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 15 ns | 15ns | 20 ns | 35 ns | 5.9A | 20V | 100V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 100V | 2 N-Channel (Dual) | 4 V | 49m Ω @ 5.9A, 10V | 4V @ 250μA | 3.8A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI7234DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7234dpt1ge3-datasheets-7285.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 3.4mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7234 | 8 | 2 | 30 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 15ns | 25 ns | 90 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 46W | 2 N-Channel (Dual) | 5000pF @ 6V | 3.4m Ω @ 20A, 4.5V | 1.5V @ 250μA | 120nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| SI7994DP-T1-GE3 | Vishay Siliconix | $22.56 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7994dpt1ge3-datasheets-7311.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 56MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.5W | C BEND | 260 | SI7994 | 8 | 2 | 40 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 35 ns | 15ns | 15 ns | 40 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 46W | 2 N-Channel (Dual) | 3500pF @ 15V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 80nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| SI7540ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7540adpt1ge3-datasheets-7127.pdf | PowerPAK® SO-8 Dual | 6 | 14 Weeks | EAR99 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.5W | 8A | 35A | 0.015Ohm | N and P-Channel | 1310pF @ 10V | 28m Ω @ 12A, 10V | 1.4V @ 250μA | 12A 9A | 48nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1967DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1967dht1e3-datasheets-1153.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 490MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1967 | 6 | Dual | 30 | 740mW | 2 | Other Transistors | 150°C | 2 ns | 27ns | 10 ns | 12 ns | -1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 1A | -20V | 2 P-Channel (Dual) | 110pF @ 10V | 490m Ω @ 910mA, 4.5V | 1V @ 250μA | 1.3A | 4nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI1926DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 1.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | SI1926 | 6 | Dual | 40 | 300mW | 2 | FET General Purpose Power | 6.5 ns | 12ns | 12 ns | 13 ns | 370mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.34A | 60V | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI1902CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902cdlt1ge3-datasheets-8642.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 235mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 420mW | GULL WING | 260 | Dual | 30 | 300mW | 2 | FET General Purpose Powers | 150°C | 4 ns | 13ns | 9 ns | 11 ns | 1A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 62pF @ 10V | 235m Ω @ 1A, 4.5V | 1.5V @ 250μA | 1.1A | 3nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI1553CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1553cdlt1ge3-datasheets-8652.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 6 | 2 | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 0.34W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.39Ohm | N and P-Channel | 38pF @ 10V | 0.29W | 390m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA 500mA | 1.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1922EEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq1922eeht1ge3-datasheets-9023.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | 2 | 1.5W | 2 | 175°C | R-PDSO-G6 | 10 ns | 15 ns | 840mA | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.84A | 0.6Ohm | 20V | 2 N-Channel (Dual) | 50pF @ 10V | 350m Ω @ 400mA, 4.5V | 1.5V @ 250μA | 840mA Tc | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1034X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1034xt1ge3-datasheets-8955.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 10Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1034 | 6 | 2 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | R-PDSO-F6 | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 5V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | 2 N-Channel (Dual) | 1.2 V | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 180mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SQ3989EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sq3989evt1ge3-datasheets-9239.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6-TSOP | 30V | 1.67W | 2 P-Channel (Dual) | 155mOhm @ 400mA, 10V | 1.5V @ 250μA | 2.5A Tc | 11.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA931DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia931djt1ge3-datasheets-9285.pdf | PowerPAK® SC-70-6 Dual | 800μm | 14 Weeks | Unknown | 6 | EAR99 | No | C-07431-DUAL | 7.8W | 2 | Dual | 1.9W | 150°C | 8 ns | 18ns | 5 ns | 20 ns | -4.3A | 20V | 30V | -30V | 2 P-Channel (Dual) | 445pF @ 15V | 65m Ω @ 3A, 10V | 2.2V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3993CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3993cdvt1ge3-datasheets-9330.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | EAR99 | Tin | unknown | e3 | 1.4W | GULL WING | NOT SPECIFIED | 6 | 2 | Dual | NOT SPECIFIED | 1.14W | 2 | Other Transistors | Not Qualified | 10 ns | 16ns | 12 ns | 17 ns | -2.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.2V | MO-193AA | 0.111Ohm | -30V | 2 P-Channel (Dual) | 210pF @ 15V | -1.2 V | 111m Ω @ 2.5A, 10V | 2.2V @ 250μA | 2.9A | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| SI3585CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3585cdvt1ge3-datasheets-9435.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 195mOhm | 6 | EAR99 | Tin | unknown | e3 | 1.3W | DUAL | GULL WING | 260 | 6 | 2 | 30 | 1.1W | 2 | Other Transistors | Not Qualified | 150°C | 3 ns | 10ns | 7 ns | 13 ns | 2.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 1.4W 1.3W | MO-193AA | 3.9A | N and P-Channel | 150pF @ 10V | 58m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 3.9A 2.1A | 4.8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| IRF9530SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf9530spbf-datasheets-9674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 300mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 100V | 4V | 3.7W Ta 88W Tc | 48A | 400 mJ | P-Channel | 860pF @ 25V | -4 V | 300m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl540pbf-datasheets-9841.pdf | TO-220-3 | 10.54mm | 8.76mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | 3 | 1 | Single | 150W | 1 | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | SILICON | SWITCHING | 100V | 2V | 150W Tc | TO-220AB | 260 ns | 440 mJ | N-Channel | 2200pF @ 25V | 2 V | 77m Ω @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||
| SUM45N25-58-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum45n2558e3-datasheets-0017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 58mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22 ns | 220ns | 145 ns | 40 ns | 45A | 30V | SILICON | SWITCHING | 3.75W Ta 375W Tc | 90A | 250V | N-Channel | 5000pF @ 25V | 4 V | 58m Ω @ 20A, 10V | 4V @ 250μA | 45A Tc | 140nC @ 10V | 6V 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SUM90N10-8M2P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sum90n108m2pe3-datasheets-9746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 8.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 3 | 1 | Single | 40 | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 23 ns | 17ns | 9 ns | 34 ns | 90A | 20V | SILICON | SWITCHING | 2.5V | 3.75W Ta 300W Tc | 240A | 100V | N-Channel | 6290pF @ 50V | 8.2m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQM120N10-3M8_GE3 | Vishay Siliconix | $3.23 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n103m8ge3-datasheets-9534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 100V | 375W Tc | N-Channel | 7230pF @ 25V | 3.8mOhm @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P08-11L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0811le3-datasheets-0300.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 11.1mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 13.6W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 330ns | 550 ns | 135 ns | -11A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 13.6W Ta 375W Tc | -80V | P-Channel | 10850pF @ 40V | -3 V | 11.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 270nC @ 10V | 4.5V 10V | ±20V |
