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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM110P04-04L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0404le3-datasheets-0474.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 4.2MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 3.75W | 1 | Other Transistors | R-PSSO-G2 | 25 ns | 30ns | 110 ns | 190 ns | 110A | 20V | SILICON | SWITCHING | 40V | 3.75W Ta 375W Tc | 240A | -40V | P-Channel | 11200pF @ 25V | 4.2m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 350nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUM110P06-08L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0608le3-datasheets-0484.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | No SVHC | 8MOhm | 3 | Tin | No | 1 | Single | 3.75W | 1 | 175°C | TO-263 (D2Pak) | 9.2nF | 20 ns | 190ns | 300 ns | 140 ns | -110A | 20V | 60V | -1V | 3.75W Ta 272W Tc | 6.5mOhm | -60V | P-Channel | 9200pF @ 25V | 8mOhm @ 30A, 10V | 3V @ 250μA | 110A Tc | 240nC @ 10V | 8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUM90P10-19L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum90p1019le3-datasheets-0383.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 19mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 375W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 510ns | 870 ns | 145 ns | -90A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 13.6W Ta 375W Tc | 245 mJ | -100V | P-Channel | 11100pF @ 50V | -3 V | 19m Ω @ 20A, 10V | 3V @ 250μA | 90A Tc | 326nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUM110N10-09-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sum110n1009e3-datasheets-9656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 9.5MOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 125ns | 130 ns | 55 ns | 110A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 375W Tc | 70 ns | 440A | 100V | N-Channel | 6700pF @ 25V | 4 V | 9.5m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SUP53P06-20-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 19.5MOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.1W | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | 60V | -1V | 3.1W Ta 104.2W Tc | TO-220AB | -60V | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp450pbf-datasheets-1281.pdf | 500V | 14A | TO-247-3 | 15.87mm | 24.86mm | 5.31mm | Lead Free | 3 | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | 5.45mm | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 190W | 1 | 150°C | 17 ns | 47ns | 44 ns | 92 ns | 14A | 20V | 500V | SILICON | SWITCHING | 4V | 190W Tc | 810 ns | 56A | 760 mJ | 500V | N-Channel | 2600pF @ 25V | 2 V | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHG20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg20n50ce3-datasheets-1322.pdf | TO-247-3 | 3 | 38.000013g | Unknown | 3 | yes | No | SINGLE | 260 | 3 | 1 | 40 | 292W | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 5V | 250W Tc | TO-247AC | 80A | 0.27Ohm | 500V | N-Channel | 2942pF @ 25V | 5 V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP264PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp264pbf-datasheets-1523.pdf | 250V | 38A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 75mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 5.4nF | 22 ns | 99ns | 92 ns | 110 ns | 38A | 20V | 250V | 4V | 280W Tc | 75mOhm | 250V | N-Channel | 5400pF @ 25V | 4 V | 75mOhm @ 23A, 10V | 4V @ 250μA | 38A Tc | 210nC @ 10V | 75 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHB33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb33n60ege3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 3 | yes | No | GULL WING | 1 | Single | 1 | FET General Purpose Powers | R-PSSO-G2 | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 278W Tc | 88A | 0.099Ohm | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/vishaysiliconix-irfp460pbf-datasheets-2064.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 270MOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 4.2nF | 18 ns | 59ns | 58 ns | 110 ns | 20A | 20V | 500V | 4V | 280W Tc | 860 ns | 270mOhm | 500V | N-Channel | 4200pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJB60EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqjb60ept1ge3-datasheets-4698.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | No SVHC | 6 | EAR99 | unknown | YES | 48W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 84A | 0.012Ohm | 2 N-Channel (Dual) | 1600pF @ 25V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB40EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb40ept1ge3-datasheets-4689.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 40V | 34W | 2 N-Channel (Dual) | 1900pF @ 25V | 8mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ940EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj940ept1ge3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | PowerPAK SO-8L Dual Asymmetric | 43W | SINGLE | GULL WING | 2 | Dual | 2 | R-PSSO-G4 | 7.7 ns | 9.5ns | 13.5 ns | 47 ns | 18A | 20V | SILICON | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 48W 43W | 15A | 60A | 0.016Ohm | 2 N-Channel (Dual) | 896pF @ 20V | 16m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta 18A Tc | 20nC @ 20V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 1.1mm | Lead Free | 14 Weeks | 84.99187mg | No SVHC | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 150°C | 1206-8 ChipFET™ | 220pF | 4 ns | 10 ns | 3.7A | 20V | 30V | 1.5V | 3.12W | 53mOhm | 30V | 2 N-Channel (Dual) | 220pF @ 15V | 1.5 V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A | 7nC @ 10V | Logic Level Gate | 65 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ704DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz704dtt1ge3-datasheets-4818.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | 14 Weeks | 6 | yes | EAR99 | No | e3 | MATTE TIN | 30W | 260 | SIZ704 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 15 ns | 12ns | 10 ns | 13 ns | 16A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20W 30W | 9.4A | 30A | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A 16A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 30 | 2W | 2 | 15 ns | 65ns | 10 ns | 15 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 3.1W | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 3.7W | GULL WING | 260 | SI4946 | 8 | Dual | 30 | 2.4W | 2 | 10 ns | 12ns | 10 ns | 25 ns | 5.3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2.4V | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 6.5A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ504EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj504ept1ge3-datasheets-4880.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 34W Tc | N and P-Channel | 1900pF @ 25V 4600pF @ 25V | 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V, 85nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ300DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz300dtt1ge3-datasheets-4806.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | Lead Free | 8 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 31W | 260 | SIZ300 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | 80ns | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 16.7W 31W | 11A | 30A | 7 mJ | 30V | 2 N-Channel (Half Bridge) | 400pF @ 15V | 24m Ω @ 9.8A, 10V | 2.4V @ 250μA | 11A 28A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4340CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4340cdyt1e3-datasheets-4887.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 14 | 5.4W | SI4340 | 2 | 14-SOIC | 1.3nF | 22 ns | 10ns | 10 ns | 32 ns | 11.5A | 16V | 20V | 3W 5.4W | 9.4mOhm | 2 N-Channel (Dual) | 1300pF @ 10V | 9.4mOhm @ 11.5A, 10V | 3V @ 250μA | 14.1A 20A | 32nC @ 10V | Logic Level Gate | 9.4 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4920EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4920eyt1ge3-datasheets-4927.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 17.5mOhm | 8 | No | 4.4W | 2 | Dual | 4.4W | 2 | 8-SO | 1.465nF | 7 ns | 10ns | 8 ns | 25 ns | 8A | 20V | 30V | 2V | 4.4W | 14.5mOhm | 2 N-Channel (Dual) | 1465pF @ 15V | 14.5mOhm @ 6A, 10V | 2.5V @ 250μA | 8A | 30nC @ 10V | Logic Level Gate | 14.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4202DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4202dyt1ge3-datasheets-4992.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 14MOhm | 8 | No | 75A | 30V | 3.7W | 2 | Dual | 2.4W | 2 | 8-SO | 710pF | 8 ns | 12.1A | 20V | 30V | 1V | 3.7W | 17mOhm | 30V | 2 N-Channel (Dual) | 710pF @ 15V | 14mOhm @ 8A, 10V | 2.5V @ 250μA | 12.1A | 17nC @ 10V | Logic Level Gate | 14 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF920DT-T1-GE3 | Vishay Siliconix | $1.25 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf920dtt1ge3-datasheets-5085.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.9W Ta 28W Tc 4.5W Ta 74W Tc | 2 N-Channel (Dual), Schottky | 1300pF @ 15V 5230pF @ 15V | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 28A Ta 76A Tc 49A Ta 197A Tc | 29nC @ 10V, 125nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4204DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4204dyt1ge3-datasheets-5103.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | e3 | 3.25W | GULL WING | 260 | SI4204 | 8 | 2 | Dual | 30 | 2W | 2 | 18 ns | 24ns | 13 ns | 26 ns | 19.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 3.25W | 0.0046Ohm | 20V | 2 N-Channel (Dual) | 2110pF @ 10V | 4.6m Ω @ 10A, 10V | 2.4V @ 250μA | 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SISF20DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf20dnt1ge3-datasheets-5035.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 60V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) | 1290pF @ 30V | 13mOhm @ 7A, 10V | 3V @ 250μA | 14A Ta 52A Tc | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5908DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | ULTRA LOW RESISTANCE | No | Pure Matte Tin (Sn) | 1.1W | 260 | SI5908 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Powers | 20 ns | 36ns | 12 ns | 30 ns | 4.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7923DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7923dnt1e3-datasheets-1593.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7923 | 8 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-C6 | 10 ns | 12ns | 28 ns | 38 ns | 6.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.3A | 0.047Ohm | -30V | 2 P-Channel (Dual) | 47m Ω @ 6.4A, 10V | 3V @ 250μA | 4.3A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SQ4946AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4946aeyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8-SO | 60V | 4W | 33mOhm | 2 N-Channel (Dual) | 750pF @ 25V | 40mOhm @ 4.5A, 10V | 2.5V @ 250μA | 7A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 36mOhm | 8 | No | 3.12W | SI4936 | 2 | Dual | 1.1W | 2 | 8-SO | 220pF | 6 ns | 14ns | 14 ns | 30 ns | 5.9A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 1 V | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ910EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqjq910elt1ge3-datasheets-5218.pdf | PowerPAK® 8 x 8 Dual | 12 Weeks | 4 | PowerPAK® 8 x 8 Dual | 100V | 187W | 2 N-Channel (Dual) | 2832pF @ 50V | 8.6mOhm @ 10A, 10V | 2.5V @ 250μA | 70A Tc | 58nC @ 10V | Standard |
