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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI6968BEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 22MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1W | GULL WING | 260 | SI6968 | 8 | Dual | 30 | 1W | 2 | FET General Purpose Powers | 150°C | 245 ns | 330ns | 330 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SQJ960EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj960ept1ge3-datasheets-5136.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | No | 34W | 2 | Dual | 34W | 1 | PowerPAK® SO-8 Dual | 735pF | 6 ns | 8ns | 7 ns | 19 ns | 8A | 20V | 60V | 2V | 34W | 30mOhm | 2 N-Channel (Dual) | 735pF @ 25V | 36mOhm @ 5.3A, 10V | 2.5V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI9926CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9926cdyt1e3-datasheets-1229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.1W | GULL WING | 260 | SI9926 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 150°C | 15 ns | 12ns | 10 ns | 35 ns | 8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 8A | 20V | 2 N-Channel (Dual) | 1200pF @ 10V | 18m Ω @ 8.3A, 4.5V | 1.5V @ 250μA | 33nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI7997DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7997dpt1ge3-datasheets-5919.pdf | PowerPAK® SO-8 Dual | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 5.5mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7997 | 8 | Dual | 40 | 3.5W | 2 | Other Transistors | Not Qualified | 150°C | R-XDSO-C5 | 15 ns | 40 ns | 115 ns | -20.8A | 20V | SILICON | DRAIN | 30V | METAL-OXIDE SEMICONDUCTOR | -2.2V | 60A | 100A | 45 mJ | -30V | 2 P-Channel (Dual) | 6200pF @ 15V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 60A | 160nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SIZ918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz918dtt1ge3-datasheets-5816.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | Unknown | 10 | EAR99 | No | 100W | SIZ918 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 29W 100W | 16A | 50A | 16 mJ | 30V | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 16A 28A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ974EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj974ept1ge3-datasheets-6081.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 48W | 2 N-Channel (Dual) | 1050pF @ 25V | 25.5mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ570EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj570ept1ge3-datasheets-6239.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 27W | N and P-Channel | 650pF @ 25V 600pF @ 25V | 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V | 2.5V @ 250μA | 15A Tc 9.5A Tc | 20nC @ 10V, 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7212DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 10 ns | 30 ns | 4.9A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.036Ohm | 5 mJ | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 1.7W | 2 | 19 ns | 40ns | 40 ns | 15 ns | 3.7A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.055Ohm | N and P-Channel | 285pF @ 10V | 55m Ω @ 4.3A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SQJ946EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj946ept1ge3-datasheets-6555.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 27W | 15A | 40A | 0.033Ohm | 6 mJ | 2 N-Channel (Dual) | 600pF @ 25V | 33m Ω @ 7A, 10V | 2.5V @ 250μA | 15A Tc | 20nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 19.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 45ns | 12 ns | 15 ns | 8.5A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7.5A | 30V | 2 N-Channel (Dual) | 660pF @ 15V | 19.5m Ω @ 8A, 10V | 2.5V @ 250μA | 22nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SQJQ900E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqjq900et1ge3-datasheets-6735.pdf | PowerPAK® 8 x 8 Dual | Lead Free | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 75W | 60A | 400A | 0.0039Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.9m Ω @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 120nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA918EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia918edjt1ge3-datasheets-6820.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 7.8W | 2 N-Channel (Dual) | 58m Ω @ 3A, 4.5V | 900mV @ 250μA | 4.5A Tc | 5.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | 4.9A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 28nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIRB40DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sirb40dpt1ge3-datasheets-6987.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 46.2W | 2 N-Channel (Dual) | 4290pF @ 20V | 3.25m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 45nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1022R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1022rt1ge3-datasheets-7035.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 3Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 250mW | 1 | 330mA | 20V | SILICON | SWITCHING | 60V | 60V | 2.5V | 250mW Ta | N-Channel | 30pF @ 25V | 1.25 Ω @ 500mA, 10V | 2.5V @ 250μA | 330mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI2318DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2318dst1e3-datasheets-7122.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 5 ns | 12ns | 12 ns | 20 ns | 3.9A | 20V | SILICON | SWITCHING | 3V | 750mW Ta | 3A | 40V | N-Channel | 540pF @ 20V | 3 V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 3A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI2319CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2319cdst1ge3-datasheets-7326.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 77mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 40 ns | 18 ns | -4.4A | 20V | SILICON | SWITCHING | 40V | -2.5V | 1.25W Ta 2.5W Tc | -40V | P-Channel | 595pF @ 20V | -1.2 V | 77m Ω @ 3.1A, 10V | 2.5V @ 250μA | 4.4A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 345mOhm | 3 | EAR99 | No | 12A | e3 | Matte Tin (Sn) | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.7W | 1 | Other Transistors | 40 ns | 35ns | 35 ns | 15 ns | 1.2A | 20V | SILICON | SWITCHING | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIA427DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia427djt1ge3-datasheets-7386.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | Unknown | 13mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-PDSO-N4 | 20 ns | 20ns | 40 ns | 70 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 8V | 350mV | 3.5W Ta 19W Tc | 50A | -8V | P-Channel | 2300pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 12A Tc | 50nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||
| SIA400EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia400edjt1ge3-datasheets-7705.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 3.5W | 1 | FET General Purpose Powers | S-PDSO-N3 | 12A | 12V | SILICON | DRAIN | SWITCHING | 19.2W Tc | 30A | 30V | N-Channel | 1265pF @ 15V | 19m Ω @ 11A, 4.5V | 1.5V @ 250μA | 12A Tc | 36nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI2307BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2307bdst1e3-datasheets-7112.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 78mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 9 ns | 12ns | 12 ns | 25 ns | -2.5A | 20V | SILICON | 30V | -3V | 750mW Ta | -30V | P-Channel | 380pF @ 15V | -3 V | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 2.5A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SQ2337ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2337est1ge3-datasheets-7871.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 3 | 3W | 1 | SOT-23-3 (TO-236) | 2.2A | 20V | 80V | 3W Tc | P-Channel | 620pF @ 30V | 290mOhm @ 1A, 4.5V | 2.5V @ 250μA | 2.2A Tc | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2319ADS-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2319adst1ge3-datasheets-7856.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.5W Tc | P-Channel | 620pF @ 20V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5457DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5457dct1ge3-datasheets-7495.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 36mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 2.3W | 1 | 25 ns | 20ns | 12 ns | 30 ns | 6A | 12V | SILICON | SWITCHING | 20V | 5.7W Tc | 6A | -20V | P-Channel | 1000pF @ 10V | 36m Ω @ 4.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 38nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SIA441DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia441djt1ge3-datasheets-8030.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 3.5W | 1 | Other Transistors | S-PDSO-N3 | 6.6A | 20V | SILICON | DRAIN | SWITCHING | 40V | 19W Tc | 30A | 0.047Ohm | 8.5 mJ | -40V | P-Channel | 890pF @ 20V | -1.2 V | 47m Ω @ 4.4A, 10V | 2.2V @ 250μA | 12A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 15 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 25 ns | 43ns | 43 ns | 71 ns | -4.7A | 8V | SILICON | SWITCHING | 20V | -1V | 750mW Ta | -20V | P-Channel | 1020pF @ 10V | -1 V | 39m Ω @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SI4431CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4431cdyt1ge3-datasheets-8251.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 32MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 150°C | 10 ns | 89ns | 11 ns | 23 ns | -9A | 20V | SILICON | SWITCHING | 30V | -2.5V | 2.5W Ta 4.2W Tc | 7A | -30V | P-Channel | 1006pF @ 15V | 32m Ω @ 7A, 10V | 2.5V @ 250μA | 9A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI5442DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5442dut1ge3-datasheets-8289.pdf | PowerPAK® ChipFET™ Single | 900μm | Lead Free | 14 Weeks | 8 | yes | EAR99 | No | C14-0630-ChipFET-Single | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.1W | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 30 ns | 12.4A | 8V | 3.1W Ta 31W Tc | 25A | 20V | N-Channel | 1700pF @ 10V | 10m Ω @ 8A, 4.5V | 900mV @ 250μA | 25A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2333dst1e3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 32mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 25 ns | 45ns | 45 ns | 72 ns | -4.1A | 8V | SILICON | SWITCHING | 12V | -1V | 750mW Ta | -12V | P-Channel | 1100pF @ 6V | -1 V | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 4.1A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V |
