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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIA433EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia433edjt1ge3-datasheets-8627.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 15mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 710 ns | 1.7μs | 3.2 μs | 6 μs | -12A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 3.5W Ta 19W Tc | 50A | -20V | P-Channel | 18m Ω @ 7.6A, 4.5V | 1.2V @ 250μA | 12A Tc | 75nC @ 8V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| SI2314EDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2314edst1e3-datasheets-8750.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 33mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 530 ns | 1.4μs | 1.4 μs | 13.5 μs | 4.9A | 12V | SILICON | SWITCHING | 950mV | 750mW Ta | 20V | N-Channel | 950 mV | 33m Ω @ 5A, 4.5V | 950mV @ 250μA | 3.77A Ta | 14nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| IRLL110TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irll110trpbf-datasheets-8859.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 3 | 8 Weeks | 250.212891mg | Unknown | 540mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Tin | No | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | 150°C | R-PDSO-G3 | 9.3 ns | 47ns | 18 ns | 16 ns | 1.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2W Ta 3.1W Tc | 50 mJ | 100V | N-Channel | 250pF @ 25V | 540m Ω @ 900mA, 5V | 2V @ 250μA | 1.5A Tc | 6.1nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||
| SI4435DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4435ddyt1ge3-datasheets-8870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 24MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 150°C | 10 ns | 35ns | 16 ns | 45 ns | -8.1A | 20V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5W Tc | -30V | P-Channel | 1350pF @ 15V | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 11.4A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI1469DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1469dht1e3-datasheets-7724.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 80mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 5 ns | 20ns | 9 ns | 22 ns | 1.6A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.5W Ta 2.78W Tc | 3.2A | 8A | -20V | P-Channel | 470pF @ 10V | 80m Ω @ 2A, 10V | 1.5V @ 250μA | 2.7A Tc | 8.5nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||
| SI7615ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7615adnt1ge3-datasheets-9012.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | No SVHC | 4.4mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 40 | 3.7W | 1 | 150°C | S-PDSO-C5 | 13 ns | 40ns | 26 ns | 85 ns | -22.1A | 12V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.7W Ta 52W Tc | 35A | 20 mJ | -20V | P-Channel | 5590pF @ 10V | 4.4m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 183nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||
| SI2319DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2319dst1e3-datasheets-9020.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 82mOhm | 3 | yes | EAR99 | Tin | No | 3A | e3 | 40V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 7 ns | 15ns | 15 ns | 25 ns | -3A | 20V | SILICON | SWITCHING | -3V | 750mW Ta | -40V | P-Channel | 470pF @ 20V | -3 V | 82m Ω @ 3A, 10V | 3V @ 250μA | 2.3A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI3493BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | -8A | 8V | SILICON | SWITCHING | 20V | -400mV | 2.08W Ta 2.97W Tc | 8A | 25A | -20V | P-Channel | 1805pF @ 10V | -900 mV | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||
| SISA14DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sisa14dnt1ge3-datasheets-8389.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.1mOhm | yes | EAR99 | DUAL | C BEND | 240 | 40 | 1 | S-PDSO-C5 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.57W Ta 26.5W Tc | 80A | 11.25 mJ | N-Channel | 1450pF @ 15V | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIB452DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sib452dkt1ge3-datasheets-9461.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 6 | 14 Weeks | 95.991485mg | Unknown | 2.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | 12 ns | 16ns | 15 ns | 30 ns | 1.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 2.4W Ta 13W Tc | 190V | N-Channel | 135pF @ 50V | 2.4 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.5A Tc | 6.5nC @ 10V | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||
| SI2323CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323cdst1ge3-datasheets-9133.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 15 ns | 23ns | 12 ns | 40 ns | -4.6A | 8V | SILICON | SWITCHING | 20V | -400mV | 1.25W Ta 2.5W Tc | 6A | -20V | P-Channel | 1090pF @ 10V | -400 mV | 39m Ω @ 4.6A, 4.5V | 1V @ 250μA | 6A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||
| IRFL9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfl9014trpbf-datasheets-9739.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 8 Weeks | 250.212891mg | Unknown | 500mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | Other Transistors | 150°C | 11 ns | 63ns | 31 ns | 9.6 ns | -1.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | -2V | 2W Ta 3.1W Tc | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SI9433BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 55 ns | 65 ns | -6.2A | 12V | SILICON | 20V | -600mV | 1.3W Ta | 4.5A | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SI9435BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9435bdyt1e3-datasheets-9791.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 12 Weeks | 186.993455mg | Unknown | 42mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | Other Transistors | 14 ns | 14ns | 14 ns | 42 ns | -5.7A | 20V | SILICON | 30V | 30V | -1V | 1.3W Ta | P-Channel | -1 V | 42m Ω @ 5.7A, 10V | 3V @ 250μA | 4.1A Ta | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SISS27DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siss27dnt1ge3-datasheets-9758.pdf | PowerPAK® 1212-8S | 830μm | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | 1 | Single | 4.8W | 1 | 150°C | S-PDSO-N5 | 16 ns | 45ns | 20 ns | 65 ns | -23A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.8W Ta 57W Tc | 50A | 200A | 0.0056Ohm | -30V | P-Channel | 5250pF @ 15V | 5.6m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 140nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFL9110TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfl9110trpbf-datasheets-9205.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 8 Weeks | 250.212891mg | Unknown | 1.2Ohm | 4 | No | 1 | 2W | 1 | 150°C | SOT-223 | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -1.1A | 20V | 100V | -4V | 2W Ta 3.1W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 660mA, 10V | 4V @ 250μA | 1.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI7461DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -12.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.9W Ta | 60A | -60V | P-Channel | -3 V | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI7461DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6.25mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Powers | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -14.4A | 20V | SILICON | DRAIN | 60V | 60V | -3V | 1.9W Ta | 60A | P-Channel | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI7852DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7852dpt1e3-datasheets-0287.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 16.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 17 ns | 11ns | 11 ns | 40 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 7.6A | 50A | 80V | N-Channel | 2 V | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 7.6A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||
| SIR662DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir662dpt1ge3-datasheets-0189.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.7mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1V | 6.25W Ta 104W Tc | N-Channel | 4365pF @ 30V | 1 V | 2.7m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 96nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFD210PBF | Vishay Siliconix | $1.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 1.5Ohm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1 | Single | 1W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 0.6A | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7116DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7116dnt1e3-datasheets-0566.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 15ns | 15 ns | 36 ns | 16.4A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.5V | 1.5W Ta | 60A | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7812DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 3.8W Ta 52W Tc | 7.2A | 25A | 0.037Ohm | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI4423DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4423dyt1e3-datasheets-0791.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 75 ns | 165ns | 165 ns | 460 ns | -14A | 8V | SILICON | SWITCHING | -400mV | 1.5W Ta | 20V | P-Channel | -400 mV | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 175nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SIR668ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir668adpt1re3-datasheets-0824.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | N-Channel | 3750pF @ 50V | 4.8mOhm @ 20A, 10V | 4V @ 250μA | 93.6A Tc | 81nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 540mOhm | 3 | Tin | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 4V | 43W Tc | 200 ns | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SUD50P06-15-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50p0615ge3-datasheets-0843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 1 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 150°C | R-PSSO-G2 | 15 ns | 175 ns | -50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 2.5W Ta 113W Tc | 80A | -60V | P-Channel | 4950pF @ 25V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7478DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7478dpt1e3-datasheets-0846.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 115 ns | 20A | 20V | SILICON | DRAIN | 3V | 1.9W Ta | 60A | 60V | N-Channel | 3 V | 7.5m Ω @ 20A, 10V | 3V @ 250μA | 15A Ta | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7478DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7478dpt1e3-datasheets-0846.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 115 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.9W Ta | 60A | 60V | N-Channel | 7.5m Ω @ 20A, 10V | 3V @ 250μA | 15A Ta | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7137DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7137dpt1ge3-datasheets-0739.pdf | PowerPAK® SO-8 | 6.15mm | 1.12mm | 5.15mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.95mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 100 ns | 150ns | 110 ns | 230 ns | -60A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1.4V | 6.25W Ta 104W Tc | 42A | -20V | P-Channel | 20000pF @ 10V | -1.4 V | 1.95m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 585nC @ 10V | 2.5V 10V | ±12V |
