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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI1411DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1411dht1ge3-datasheets-0719.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 420mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 1W Ta | 0.42A | 2.7Ohm | P-Channel | 2.6 Ω @ 500mA, 10V | 4.5V @ 100μA | 420mA Ta | 6.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 4Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 12 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||
| SI4425DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4425ddyt1ge3-datasheets-0794.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 9.8MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 5.7W | 1 | Other Transistors | 150°C | 12 ns | 9ns | 9 ns | 42 ns | -13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.2V | 2.5W Ta 5.7W Tc | -30V | P-Channel | 2610pF @ 15V | -1.2 V | 9.8m Ω @ 13A, 10V | 2.5V @ 250μA | 19.7A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SI7149ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7149adpt1ge3-datasheets-0709.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 1 | Single | 30 | 48W | 1 | 150°C | R-PDSO-C5 | 12ns | 12 ns | 58 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 5W Ta 48W Tc | 300A | 0.0052Ohm | -30V | P-Channel | 5125pF @ 15V | 5.2m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 135nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||
| SI7617DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7617dnt1ge3-datasheets-1347.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 11 ns | 43ns | 11 ns | 32 ns | -35A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 60A | 42 mJ | -30V | P-Channel | 1800pF @ 15V | 12.3m Ω @ 13.9A, 10V | 2.5V @ 250μA | 35A Tc | 59nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||
| SIR424DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir424dpt1ge3-datasheets-1847.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.8W | 1 | FET General Purpose Powers | R-PDSO-C5 | 18 ns | 12ns | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 23.4A | 70A | 20V | N-Channel | 1250pF @ 10V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SIA456DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sia456djt1ge3-datasheets-1859.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 1.38Ohm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 6 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C3 | 5 ns | 20ns | 12 ns | 16 ns | 2.6A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.4V | 3.5W Ta 19W Tc | 2A | 200V | N-Channel | 350pF @ 100V | 1.4 V | 1.38 Ω @ 750mA, 4.5V | 1.4V @ 250μA | 2.6A Tc | 14.5nC @ 10V | 1.8V 4.5V | ±16V | |||||||||||||||||||||||
| SUD50N04-8M8P-4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50n048m8p4ge3-datasheets-2298.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 8.8mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 48.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 15ns | 15 ns | 45 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.5V | 3.1W Ta 48.1W Tc | 50A | 45 mJ | N-Channel | 2400pF @ 20V | 8.8m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta 50A Tc | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SUD23N06-31-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud23n0631ge3-datasheets-2119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 30 | 5.7W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 250ns | 68 ns | 35 ns | 9.1A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5.7W Ta 31.25W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 31m Ω @ 15A, 10V | 3V @ 250μA | 21.4A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SI2337DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2337dst1e3-datasheets-2246.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 270mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 760mW | 1 | Other Transistors | 150°C | 10 ns | 15ns | 15 ns | 20 ns | -2.2A | 20V | SILICON | SWITCHING | 80V | -2V | 760mW Ta 2.5W Tc | -80V | P-Channel | 500pF @ 40V | 270m Ω @ 1.2A, 10V | 4V @ 250μA | 2.2A Tc | 17nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||
| SIS407DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis407dnt1ge3-datasheets-2330.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | Unknown | 9.5mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.6W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 23 ns | 28ns | 38 ns | 92 ns | -25A | -8V | SILICON | DRAIN | SWITCHING | 20V | -1V | 3.6W Ta 33W Tc | 40A | 20 mJ | -20V | P-Channel | 2760pF @ 10V | 9.5m Ω @ 15.3A, 4.5V | 1V @ 250μA | 25A Tc | 93.8nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||
| IRFRC20TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | No | 18A | 650V | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | 600V | 2V | 2.5W Ta 42W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 2 V | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIS410DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis410dnt1ge3-datasheets-2517.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | Single | 5.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 22A | 60A | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI4425BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4425bdyt1e3-datasheets-2582.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 1.5W | 1 | Other Transistors | 15 ns | 13ns | 13 ns | 100 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | -400mV | 1.5W Ta | -30V | P-Channel | -400 mV | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 8.8A Ta | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SIS892ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis892adnt1ge3-datasheets-2688.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | Unknown | 33MOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | FET General Purpose Powers | 150°C | S-PDSO-C5 | 10 ns | 16 ns | 7.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3.7W Ta 52W Tc | 40A | 5 mJ | 100V | N-Channel | 550pF @ 50V | 33m Ω @ 10A, 10V | 3V @ 250μA | 28A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI8429DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8429dbt1e1-datasheets-2490.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | Lead Free | 4 | 33 Weeks | Unknown | 35mOhm | 4 | yes | EAR99 | Copper, Silver, Tin | No | e3 | Matte Tin (Sn) | BOTTOM | UNSPECIFIED | 260 | 4 | 1 | 40 | 2.77W | 1 | Other Transistors | 12 ns | 25ns | 155 ns | 260 ns | -10.2A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8V | -600mV | 2.77W Ta 6.25W Tc | 7.8A | 25A | -8V | P-Channel | 1640pF @ 4V | 35m Ω @ 1A, 4.5V | 800mV @ 250μA | 11.7A Tc | 26nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||
| SI7716ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7716adnt1ge3-datasheets-2437.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 13.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 846pF @ 15V | 13.5m Ω @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SI7117DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7117dnt1e3-datasheets-3206.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.2Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 7 ns | 11ns | 11 ns | 16 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 12.5W Tc | 2.2A | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.17A Tc | 12nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||
| SI4386DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4386dyt1e3-datasheets-3241.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 7mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.47W | 1 | FET General Purpose Power | 12 ns | 9ns | 9 ns | 35 ns | 16A | 20V | SILICON | SWITCHING | 1.47W Ta | 30V | N-Channel | 2 V | 7m Ω @ 16A, 10V | 2.5V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI4464DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4464dyt1e3-datasheets-3300.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 240mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 12 ns | 15 ns | 1.7A | 20V | SILICON | SWITCHING | 1.5W Ta | 200V | N-Channel | 2 V | 240m Ω @ 2.2A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||
| SIR422DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir422dpt1ge3-datasheets-3469.pdf | PowerPAK® SO-8 | 5.969mm | 1.12mm | 5.0038mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | 150°C | R-XDSO-C5 | 19 ns | 84ns | 11 ns | 28 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5W Ta 34.7W Tc | 20.5A | 70A | 45 mJ | 40V | N-Channel | 1785pF @ 20V | 1.2 V | 6.6m Ω @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 48nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||
| SIR466DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir466dpt1ge3-datasheets-3474.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.5mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 30 ns | 9ns | 9 ns | 35 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 54W Tc | 70A | 45 mJ | 30V | N-Channel | 2730pF @ 15V | 3.5m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SI7810DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7810dnt1e3-datasheets-3656.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 62mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 15 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 20A | 100V | N-Channel | 4.5 V | 62m Ω @ 5.4A, 10V | 4.5V @ 250μA | 3.4A Ta | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||
| SI4483ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4483adyt1ge3-datasheets-3642.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8.8mOhm | 8 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.9W | 1 | 70 ns | 150ns | 28 ns | 43 ns | 13.5A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.1V | 2.9W Ta 5.9W Tc | P-Channel | 3900pF @ 15V | 8.8m Ω @ 10A, 10V | 2.6V @ 250μA | 19.2A Tc | 135nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
| SI2365EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2365edst1ge3-datasheets-4458.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 9 ns | 32μs | 21 μs | 65 ns | -4.5A | 8V | SILICON | SWITCHING | 20V | -1V | 1W Ta 1.7W Tc | 5.9A | -20V | P-Channel | 32m Ω @ 4A, 4.5V | 1V @ 250μA | 5.9A Tc | 36nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SI2301BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2301bdst1e3-datasheets-4774.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 100MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | Other Transistors | 150°C | 20 ns | 40ns | 40 ns | 30 ns | -2.2A | 8V | SILICON | 20V | -950mV | 700mW Ta | -20V | P-Channel | 375pF @ 6V | -950 mV | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 2.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||
| SI2302CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2302cdst1e3-datasheets-4810.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 57mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 710mW | 1 | FET General Purpose Powers | 150°C | 112pF | 8 ns | 7ns | 7 ns | 30 ns | 2.6A | 8V | SILICON | SWITCHING | 400mV | 710mW Ta | 20V | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.6A Ta | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||
| SI2304BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2304bdst1ge3-datasheets-5031.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 70mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 7.5 ns | 12.5ns | 12.5 ns | 19 ns | 3.2A | 20V | SILICON | SWITCHING | 2.25V | 750mW Ta | 2.6A | 30V | N-Channel | 225pF @ 15V | 70m Ω @ 2.5A, 10V | 3V @ 250μA | 2.6A Ta | 4nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SI1012CR-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1012crt1ge3-datasheets-5114.pdf | SC-75, SOT-416 | 1.68mm | 800μm | 860μm | Lead Free | 3 | 14 Weeks | 2.012816mg | No SVHC | 396mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 240mW | 1 | 150°C | 11 ns | 16ns | 11 ns | 26 ns | 630mA | 8V | SILICON | SWITCHING | 400mV | 240mW Ta | 20V | N-Channel | 43pF @ 10V | 396m Ω @ 600mA, 4.5V | 1V @ 250μA | 2nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SI2356DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2356dst1ge3-datasheets-5405.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 960mW | 1 | 150°C | 6 ns | 52ns | 53 ns | 13 ns | 3.2A | 12V | SILICON | SWITCHING | 1.5V | 960mW Ta 1.7W Tc | 40V | N-Channel | 370pF @ 20V | 51m Ω @ 3.2A, 10V | 1.5V @ 250μA | 4.3A Tc | 13nC @ 10V | 2.5V 10V | ±12V |
