| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TP0610K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 10Ohm | 3 | yes | EAR99 | ESD PROTECTION, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 20 | 350mW | 1 | Other Transistors | 150°C | 20 ns | 35 ns | -185mA | 20V | SILICON | SWITCHING | 60V | -3V | 350mW Ta | -60V | P-Channel | 23pF @ 25V | -3 V | 6 Ω @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SI1032R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1032rt1ge3-datasheets-5605.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | Unknown | 5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 250mW | 1 | FET General Purpose Power | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 6V | SILICON | SWITCHING | 900mV | 250mW Ta | 20V | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 140mA Ta | 0.75nC @ 4.5V | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||||||
| SI2318CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si2318cdst1ge3-datasheets-5701.pdf&product=vishaysiliconix-si2318cdst1ge3-6385854 | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 42mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 1.25W | 1 | 150°C | 12 ns | 8 ns | 14 ns | 4.3A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 2.1W Tc | 5.6A | 40V | N-Channel | 340pF @ 20V | 1.2 V | 42m Ω @ 4.3A, 10V | 2.5V @ 250μA | 5.6A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI1308EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1308edlt1ge3-datasheets-5716.pdf | SC-70, SOT-323 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 3 | 14 Weeks | 124.596154mg | No SVHC | 132mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 400mW | 1 | FET General Purpose Power | 150°C | 2 ns | 9ns | 8 ns | 8 ns | 1.5A | 12V | SILICON | SWITCHING | 600mV | 400mW Ta 500mW Tc | 30V | N-Channel | 105pF @ 15V | 132m Ω @ 1.4A, 10V | 1.5V @ 250μA | 1.4A Tc | 4.1nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||
| SI1012R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1012rt1ge3-datasheets-5803.pdf | SC-75A | 1.58mm | 800μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 700MOhm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 150mW | 1 | FET General Purpose Power | 150°C | 5 ns | 5ns | 5 ns | 25 ns | 600mA | 6V | SILICON | SWITCHING | 800mV | 150mW Ta | 0.5A | 20V | N-Channel | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 500mA Ta | 0.75nC @ 4.5V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||
| SI1317DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1317dlt1ge3-datasheets-5704.pdf | SC-70, SOT-323 | 1.1mm | Lead Free | 3 | 14 Weeks | 124.596154mg | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 400mW | 1 | Other Transistors | 150°C | 12 ns | 30ns | 18 ns | 23 ns | -1.4A | 8V | SILICON | SWITCHING | 20V | -800mV | 500mW Tc | -20V | P-Channel | 272pF @ 10V | 150m Ω @ 1.4A, 4.5V | 800mV @ 250μA | 1.4A Tc | 6.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI2369DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2369dst1ge3-datasheets-6101.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 14 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | 30 | 1.25W | 1 | 150°C | 13 ns | 38 ns | -5.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.2V | 1.25W Ta 2.5W Tc | 7.6A | 0.029Ohm | -30V | P-Channel | 1295pF @ 15V | 29m Ω @ 5.4A, 10V | 2.5V @ 250μA | 7.6A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIA461DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia461djt1ge3-datasheets-5949.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.4W | 1 | S-PDSO-N3 | 20 ns | 22ns | 20 ns | 50 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.4W Ta 17.9W Tc | 20A | 0.033Ohm | -20V | P-Channel | 1300pF @ 10V | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 12A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SI2333DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2333ddst1ge3-datasheets-6195.pdf&product=vishaysiliconix-si2333ddst1ge3-6385947 | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.2W | 1 | Other Transistors | 150°C | 26 ns | 24ns | 20 ns | 45 ns | -5A | 8V | SILICON | SWITCHING | 12V | -1V | 1.2W Ta 1.7W Tc | 6A | 0.028Ohm | -12V | P-Channel | 1275pF @ 6V | 28m Ω @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 35nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||
| SI8816EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8816edbt2e1-datasheets-6230.pdf | 4-XFBGA | Lead Free | 4 | 44 Weeks | No SVHC | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | Single | 30 | 1 | 15 ns | 20ns | 10 ns | 20 ns | 2.3A | 12V | SILICON | SWITCHING | 600mV | 500mW Ta | 1.5A | 0.123Ohm | 30V | N-Channel | 195pF @ 15V | 109m Ω @ 1A, 10V | 1.4V @ 250μA | 8nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI2315BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si2315bdst1e3-datasheets-6333.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 50mOhm | 3 | yes | EAR99 | No | 3A | e3 | Matte Tin (Sn) | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 15 ns | 35ns | 35 ns | 50 ns | -3A | 8V | -12V | SILICON | -900mV | 750mW Ta | -12V | P-Channel | 715pF @ 6V | -900 mV | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 3A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||
| SI1302DL-T1-E3 | Vishay Siliconix | $0.50 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1302dlt1e3-datasheets-6317.pdf | SC-70, SOT-323 | 2mm | 1mm | 1.25mm | Lead Free | 3 | 14 Weeks | 6.208546mg | No SVHC | 480mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 310mW | 1 | FET General Purpose Power | Not Qualified | 5 ns | 8ns | 7 ns | 8 ns | 640mA | 20V | SILICON | 1V | 280mW Ta | 0.6A | 30V | N-Channel | 3 V | 480m Ω @ 600mA, 10V | 3V @ 250μA | 600mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SI1013R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si1013rt1ge3-datasheets-5895.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 150mW | 1 | Other Transistors | 5 ns | 9ns | 9 ns | 35 ns | -400mA | 6V | SILICON | SWITCHING | 20V | -450mV | 150mW Ta | -20V | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 350mA Ta | 1.5nC @ 4.5V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||
| SI1302DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1302dlt1e3-datasheets-6317.pdf | SC-70, SOT-323 | 3 | 14 Weeks | 6.208546mg | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 5 ns | 8ns | 7 ns | 8 ns | 600mA | 20V | SILICON | 30V | 280mW Ta | 0.6A | 0.48Ohm | N-Channel | 480m Ω @ 600mA, 10V | 3V @ 250μA | 600mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 10 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 850mV | 750mW Ta | 20V | N-Channel | 450 mV | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||
| SI2312BDS-T1-GE3 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 30 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 8V | 750mW Ta | 20V | N-Channel | 8 V | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||
| SI2302DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2302ddst1ge3-datasheets-5982.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 710mW | 1 | FET General Purpose Powers | 8 ns | 7ns | 7 ns | 30 ns | 2.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 710mW Ta | 0.057Ohm | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.9A Tj | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SIA440DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia440djt1ge3-datasheets-6673.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 1 | S-PDSO-N3 | 12 ns | 32ns | 5 ns | 23 ns | 12A | 12V | SILICON | DRAIN | SWITCHING | 3.5W Ta 19W Tc | 50A | 40V | N-Channel | 700pF @ 20V | 26m Ω @ 9A, 10V | 1.4V @ 250μA | 12A Tc | 21.5nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI1401EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si1401edht1ge3-datasheets-6120.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 34MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.6W | 1 | Other Transistors | 4A | 10V | SILICON | SWITCHING | 12V | 400mV | 1.6W Ta 2.8W Tc | 4A | P-Channel | 34m Ω @ 5.5A, 4.5V | 1V @ 250μA | 4A Tc | 36nC @ 8V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||
| SQ2318AES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2318aest1ge3-datasheets-6748.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | No SVHC | 3 | EAR99 | Tin | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 7.5 ns | 8.4ns | 5.7 ns | 12 ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 2V | 3W Tc | 8A | 46 pF | N-Channel | 555pF @ 10V | 31m Ω @ 6A, 10V | 2.5V @ 250μA | 8A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2333CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si2333cdst1e3-datasheets-6790.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 1.437803g | No SVHC | 35mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 13 ns | 35ns | 35 ns | 45 ns | 5.1A | 8V | SILICON | SWITCHING | 12V | -400mV | 1.25W Ta 2.5W Tc | -12V | P-Channel | 1225pF @ 6V | 35m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.1A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SI2308BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2308bdst1ge3-datasheets-6743.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 3 | yes | EAR99 | unknown | 8541.29.00.95 | e4 | Silver (Ag) | YES | DUAL | GULL WING | 260 | 3 | 30 | 1.09W | 1 | FET General Purpose Powers | Not Qualified | 2.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.09W Ta 1.66W Tc | 1.9A | 0.156Ohm | N-Channel | 190pF @ 30V | 156m Ω @ 1.9A, 10V | 3V @ 250μA | 2.3A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI1050X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1050xt1ge3-datasheets-6858.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 14 Weeks | 32.006612mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 1 | FET General Purpose Power | 6.8 ns | 35ns | 35 ns | 26 ns | 1.34A | 5V | SILICON | SWITCHING | 8V | 8V | 236mW Ta | 6A | N-Channel | 585pF @ 4V | 5 V | 86m Ω @ 1.34A, 4.5V | 900mV @ 250μA | 1.34A Ta | 11.6nC @ 5V | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||
| SI2342DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2342dst1ge3-datasheets-6875.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.3W | 1 | FET General Purpose Powers | 150°C | 6 ns | 14ns | 25 ns | 65 ns | 6A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800mV | 2.5W Tc | 6A | 8V | N-Channel | 1070pF @ 4V | 17m Ω @ 7.2A, 4.5V | 800mV @ 250μA | 6A Tc | 15.8nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||
| SIA483DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia483djt1ge3-datasheets-7304.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | 3 | 14 Weeks | 6 | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 3.5W | 1 | Other Transistors | 150°C | S-XDSO-N3 | 10 ns | 60ns | 20 ns | 27 ns | -10A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 40A | -30V | P-Channel | 1550pF @ 15V | 21m Ω @ 5A, 10V | 2.2V @ 250μA | 12A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI2371EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2371edst1ge3-datasheets-9378.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.7W | 1 | 150°C | 7 ns | 65ns | 62 ns | 52 ns | -4.8A | 12V | SILICON | SWITCHING | 30V | -600mV | 1W Ta 1.7W Tc | -30V | P-Channel | 45m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4.8A Tc | 35nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||
| SI3443DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3443ddvt1ge3-datasheets-9448.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 6 | EAR99 | Tin | DUAL | GULL WING | 260 | 30 | 1 | 27 ns | 25ns | 18 ns | 43 ns | -4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.7W Ta 2.7W Tc | MO-193AA | 4A | 0.047Ohm | P-Channel | 970pF @ 10V | 47m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4A Ta 5.3A Tc | 30nC @ 8V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI2374DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si2374dst1ge3-datasheets-0206.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | 30 | 960mW | 1 | 150°C | 10 ns | 22ns | 9 ns | 16 ns | 4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 960mW Ta 1.7W Tc | 5.9A | 20V | N-Channel | 735pF @ 10V | 30m Ω @ 4A, 4.5V | 1V @ 250μA | 4.5A Ta 5.9A Tc | 20nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SI2308CDS-T1-GE3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2308cdst1ge3-datasheets-0234.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 10 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.6W Tc | 2.6A | 0.144Ohm | N-Channel | 105pF @ 30V | 144m Ω @ 1.9A, 10V | 3V @ 250μA | 2.6A Tc | 4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI2304DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2304ddst1ge3-datasheets-0610.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 60mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.1W | 1 | FET General Purpose Power | 12 ns | 50ns | 22 ns | 12 ns | 3.6A | 20V | SILICON | SWITCHING | 2.2V | 1.1W Ta 1.7W Tc | 30V | N-Channel | 235pF @ 15V | 2.2 V | 60m Ω @ 3.2A, 10V | 2.2V @ 250μA | 3.3A Ta 3.6A Tc | 6.7nC @ 10V | 4.5V 10V | ±20V |
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