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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI1967DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1967dht1e3-datasheets-1153.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1967 | 6 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.49Ohm | 2 P-Channel (Dual) | 110pF @ 10V | 490m Ω @ 910mA, 4.5V | 1V @ 250μA | 4nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI4200DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4200dyt1ge3-datasheets-0744.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | 8 | 2 | Dual | 30 | 2W | 2 | 10ns | 8 ns | 7.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.8W | 8A | 25V | 2 N-Channel (Dual) | 415pF @ 13V | 25m Ω @ 7.3A, 10V | 2.2V @ 250μA | 8A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI1023CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023cxt1ge3-datasheets-1220.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 9 ns | 10ns | 8 ns | 10 ns | 450mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.45A | 1.038Ohm | 2 P-Channel (Dual) | 45pF @ 10V | 756m Ω @ 350mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SQ1912EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1912eht1ge3-datasheets-1230.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.8A | 0.28Ohm | 12 pF | 2 N-Channel (Dual) | 75pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.15nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1016X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016xt1ge3-datasheets-1326.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1016 | 6 | 40 | 250mW | 2 | Other Transistors | 485mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.485A | 20V | N and P-Channel | 700m Ω @ 600mA, 4.5V | 1V @ 250μA | 485mA 370mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SIA928DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia928djt1ge3-datasheets-1484.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | No SVHC | 6 | EAR99 | PowerPAK SC70-6L Dual | 7.8W | NOT SPECIFIED | NOT SPECIFIED | 4.5A | 30V | 2.2V | 2 N-Channel (Dual) | 490pF @ 15V | 25m Ω @ 5A, 10V | 2.2V @ 250μA | 4.5A Tc | 4.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1029X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1029xt1ge3-datasheets-1515.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | No SVHC | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1029 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 150°C | 305mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | N and P-Channel | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA 190mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI1965DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 390MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | Dual | 40 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 2 P-Channel (Dual) | 120pF @ 6V | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI5935CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 14 Weeks | 84.99187mg | No SVHC | 100MOhm | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 6 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 4A | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | |||||||||||||||||||||||||||||
| SI5935CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 32 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.1Ohm | -20V | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | |||||||||||||||||||||||||||||||
| SIA778DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sia778djt1ge3-datasheets-3238.pdf | PowerPAK® SC-70-6 Dual | 6 | 18 Weeks | 6 | yes | EAR99 | No | 5W | 260 | SIA778 | 6 | 2 | 40 | 1.9W | 2 | FET General Purpose Powers | 1.5A | SILICON | DRAIN | SWITCHING | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 6.5W 5W | 4.5A | 2 N-Channel (Dual) | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 4.5A 1.5A | 15nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SQ1539EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1539eht1ge3-datasheets-3295.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | EAR99 | unknown | AEC-Q101 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.85A | 0.28Ohm | 10 pF | N and P-Channel | 48pF @ 15V 50pF @ 15V | 280m Ω @ 1A, 10V, 940m Ω @ 500mA, 10V | 2.6V @ 250μA | 850mA Tc | 1.4nC @ 4.5V, 1.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1563AEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-sq1563aeht1ge3-datasheets-3427.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | PowerPAK® SC-70-6 Dual | 20V | 1.5W | N and P-Channel | 89pF @ 10V 84pF @ 10V | 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V | 1.5V @ 250μA | 850mA Tc | 1.25nC @ 4.5V, 1.33nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-GE3 | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishay-si1023xt1ge3-datasheets-0962.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1023 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | R-PDSO-F6 | -350mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -450mV | -20V | 2 P-Channel (Dual) | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIB912DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib912dkt1ge3-datasheets-3512.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | 6 | 14 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | 3.1W | 260 | SIB912 | 6 | 2 | Dual | 40 | 1.1W | 1 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 24 ns | 1.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 95pF @ 10V | 216m Ω @ 1.8A, 4.5V | 1V @ 250μA | 3nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI1024X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1024xt1ge3-datasheets-3402.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1024 | 6 | 1 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 600mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 450mV | 0.485A | 20V | 2 N-Channel (Dual) | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 485mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI4210DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4210dyt1ge3-datasheets-3574.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | Unknown | 8 | 2.7W | SI4210 | 2 | Dual | 1.78W | 2 | 8-SO | 445pF | 12 ns | 55ns | 8 ns | 1 ns | 6.5A | 20V | 30V | 2.5V | 2.7W | 35.5mOhm | 2 N-Channel (Dual) | 445pF @ 15V | 35.5mOhm @ 5A, 10V | 2.5V @ 250μA | 6.5A | 12nC @ 10V | Logic Level Gate | 35.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SIB900EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sib900edkt1ge3-datasheets-3733.pdf | PowerPAK® SC-75-6L Dual | 6 | 6 | yes | EAR99 | ESD PROTECTION | No | 3.1W | 260 | SIB900 | 6 | 40 | 2 | FET General Purpose Powers | 20 ns | 12ns | 12 ns | 70 ns | 1.5A | 6V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.225Ohm | 2 N-Channel (Dual) | 225m Ω @ 1.6A, 4.5V | 1V @ 250μA | 1.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIA913ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia913adjt1ge3-datasheets-3734.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 6 | 14 Weeks | 28.009329mg | yes | EAR99 | Tin | No | 6.5W | 260 | SIA913 | 3 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-N6 | 20 ns | 25ns | 25 ns | 30 ns | 4.3A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.061Ohm | -12V | 2 P-Channel (Dual) | 590pF @ 6V | 61m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4.5A | 20nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI4501BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4501bdyt1ge3-datasheets-3768.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 540.001716mg | No SVHC | 8 | Tin | 4.5W | 2 | Dual | 2 | 8-SOIC | 805pF | 6 ns | 12ns | 9 ns | 35 ns | 12A | 8V | 30V 8V | 800mV | 4.5W 3.1W | 21mOhm | N and P-Channel, Common Drain | 805pF @ 15V | 17mOhm @ 10A, 10V | 2V @ 250μA | 12A 8A | 25nC @ 10V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 14 Weeks | 157.991892mg | Unknown | 8 | No | 830mW | SI6954 | 2 | Dual | 830mW | 2 | 8-TSSOP | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | 30V | 1V | 830mW | 53mOhm | 2 N-Channel (Dual) | 53mOhm @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | 53 mΩ | ||||||||||||||||||||||||||||||||||||||||
| SI5922DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5922dut1ge3-datasheets-3546.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | No SVHC | 6 | EAR99 | 10.4W | NOT SPECIFIED | NOT SPECIFIED | 6A | 30V | 2.2V | 2 N-Channel (Dual) | 765pF @ 15V | 19.2m Ω @ 5A, 10V | 2.2V @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjb68ept1ge3-datasheets-4051.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 15 ns | 11A | 20V | 100V | 27W | 76.5mOhm | 100V | 2 N-Channel (Dual) | 280pF @ 25V | 92mOhm @ 4A, 10V | 2.5V @ 250μA | 11A Tc | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ200EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj200ept1ge3-datasheets-4098.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 20V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 10V | 8.8m Ω @ 16A, 10V | 2V @ 250μA | 20A 60A | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ9945BEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq9945beyt1ge3-datasheets-4115.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 64mOhm | 8 | No | 4W | 2 | Dual | 8-SO | 470pF | 6 ns | 2.8ns | 1.7 ns | 17 ns | 5.4A | 20V | 60V | 2V | 4W | 64mOhm | 60V | 2 N-Channel (Dual) | 470pF @ 25V | 64mOhm @ 3.4A, 10V | 2.5V @ 250μA | 5.4A | 12nC @ 10V | Logic Level Gate | 64 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SISB46DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sisb46dnt1ge3-datasheets-4121.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 23W | 2 N-Channel (Dual) | 1100pF @ 20V | 11.71m Ω @ 5A, 10V | 2.2V @ 250μA | 34A Tc | 11nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6562CDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6562cdqt1ge3-datasheets-4119.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.7W | DUAL | GULL WING | 260 | SI6562 | 8 | 2 | 30 | 2 | Other Transistors | 150°C | 30 ns | 25ns | 25 ns | 45 ns | 6.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 1.6W 1.7W | 6.7A | 20V | N and P-Channel | 850pF @ 10V | 22m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 6.7A 6.1A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||
| SI7904BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 30mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 17.8W | C BEND | 260 | SI7904 | 8 | Dual | 30 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIA906EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia906edjt1ge3-datasheets-4245.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 850μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 46mOhm | 6 | yes | EAR99 | Tin | C-07431-DUAL | unknown | e3 | 7.8W | NO LEAD | 260 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | Not Qualified | 150°C | 5 ns | 12ns | 12 ns | 15 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SIZ322DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz322dtt1ge3-datasheets-4273.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.7W | 150°C | 10 ns | 15 ns | 19A | 16.7W Tc | 25V | 2 N-Channel (Dual) | 950pF @ 12.5V | 6.35m Ω @ 15A, 10V | 2.4V @ 250μA | 30A Tc | 20.1nC @ 10V | Standard |
