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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI1025X-T1-GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1025xt1ge3-datasheets-4065.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | Unknown | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1025 | 3 | Dual | 40 | 250mW | 2 | Other Transistors | -500mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -2V | 0.19A | -60V | 2 P-Channel (Dual) | 23pF @ 25V | 4 Ω @ 500mA, 10V | 3V @ 250μA | 190mA | 1.7nC @ 15V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI3932DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si3932dvt1ge3-datasheets-4386.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 58MOhm | 6 | yes | EAR99 | Tin | No | e3 | 1.4W | GULL WING | 260 | SI3932 | 6 | 2 | Dual | 30 | 1.14W | 2 | FET General Purpose Powers | 150°C | 5 ns | 15ns | 10 ns | 10 ns | 3.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 3.7A | 30V | 2 N-Channel (Dual) | 235pF @ 15V | 1.2 V | 58m Ω @ 3.4A, 10V | 2.2V @ 250μA | 3.7A | 6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4936bdyt1ge3-datasheets-1205.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4936 | 8 | 2 | Dual | 40 | 2W | 2 | FET General Purpose Power | 5 ns | 25ns | 25 ns | 12 ns | 6.9A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 2.8W | 30A | 30V | 2 N-Channel (Dual) | 530pF @ 15V | 3 V | 35m Ω @ 5.9A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7232DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7232dnt1ge3-datasheets-4961.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.17mm | 3.05mm | Lead Free | 6 | 14 Weeks | 8 | yes | EAR99 | Tin | No | e3 | 23W | C BEND | 260 | SI7232 | 8 | 30 | 2.6W | 2 | FET General Purpose Power | 150°C | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 35 ns | 10A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 40A | 0.0164Ohm | 11 mJ | 20V | 2 N-Channel (Dual) | 1220pF @ 10V | 16.4m Ω @ 10A, 4.5V | 1V @ 250μA | 25A | 32nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI9945BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9945bdyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | GULL WING | 260 | SI9945 | 8 | 2 | Dual | 30 | 3.1W | 2 | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 20 ns | 4.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 5.3A | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 2.5 V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI6926ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si6926adqt1e3-datasheets-4790.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 30mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6926 | 8 | 2 | Dual | 40 | 830mW | 2 | FET General Purpose Power | 6 ns | 16ns | 16 ns | 46 ns | 4.5A | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 4.1A | 20V | 2 N-Channel (Dual) | 400 mV | 30m Ω @ 4.5A, 4.5V | 1V @ 250μA | 4.1A | 10.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4909DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4909dyt1ge3-datasheets-5118.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8 | No | 3.2W | 2 | Dual | 2W | 2 | 150°C | 8-SO | 2nF | 10 ns | 9ns | 13 ns | 50 ns | -8A | 20V | 40V | -1.2V | 3.2W | 21mOhm | -40V | 2 P-Channel (Dual) | 2000pF @ 20V | 27mOhm @ 8A, 10V | 2.5V @ 250μA | 8A | 63nC @ 10V | Logic Level Gate | 27 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| SI4931DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4931dyt1e3-datasheets-5063.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4931 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 25 ns | 46ns | 155 ns | 230 ns | 6.7A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) | 18m Ω @ 8.9A, 4.5V | 1V @ 350μA | 52nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4925BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4925bdyt1e3-datasheets-5285.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | SI4925 | 8 | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 5.3A | 0.025Ohm | 2 P-Channel (Dual) | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 5.3A | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4925DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4925ddyt1ge3-datasheets-5125.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 29mOhm | 8 | EAR99 | No | 5W | GULL WING | SI4925 | 8 | 2 | Dual | 5W | 2 | 150°C | 10 ns | 35ns | 16 ns | 45 ns | -7.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | -30V | 2 P-Channel (Dual) | 1350pF @ 15V | -3 V | 29m Ω @ 7.3A, 10V | 3V @ 250μA | 8A | 50nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| SI4931DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4931dyt1e3-datasheets-5063.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | 1.1W | GULL WING | SI4931 | 8 | Dual | 1.1W | 2 | Other Transistors | 25 ns | 46ns | 46 ns | 230 ns | -8.9A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 6.7A | -12V | 2 P-Channel (Dual) | 18m Ω @ 8.9A, 4.5V | 1V @ 350μA | 6.7A | 52nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI4948BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4948beyt1ge3-datasheets-1222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 120mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.4W | GULL WING | 260 | SI4948 | 8 | 2 | Dual | 30 | 1.4W | 2 | 10 ns | 15ns | 15 ns | 50 ns | -3.1A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 2 P-Channel (Dual) | -3 V | 120m Ω @ 3.1A, 10V | 3V @ 250μA | 2.4A | 22nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2.4W | GULL WING | 260 | SI4946 | 8 | 2 | Dual | 40 | 2.4W | 2 | 175°C | 10 ns | 12ns | 10 ns | 25 ns | 6.5A | 20V | SILICON | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 3.7W | 5.3A | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4922BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 16mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 3.1W | 8A | 30V | 2 N-Channel (Dual) | 2070pF @ 15V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| SI4288DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4288dyt1ge3-datasheets-5505.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 8 ns | 16 ns | 7.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 40V | 2 N-Channel (Dual) | 580pF @ 20V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI1900DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | /files/vishaysiliconix-si1900dlt1e3-datasheets-4332.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 0.3W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 300mW 270mW | 0.59A | 0.48Ohm | 2 N-Channel (Dual) | 480m Ω @ 590mA, 10V | 3V @ 250μA | 630mA Ta 590mA Ta | 1.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6926ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si6926adqt1e3-datasheets-4790.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 830mW | GULL WING | 260 | SI6926 | 8 | Dual | 40 | 830mW | 2 | FET General Purpose Powers | 6 ns | 16ns | 16 ns | 46 ns | 4.5A | 8V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 4.1A | 2 N-Channel (Dual) | 30m Ω @ 4.5A, 4.5V | 1V @ 250μA | 4.1A | 10.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI9933CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9933cdyt1ge3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58MOhm | 8 | yes | EAR99 | Tin | No | 470mW | GULL WING | 260 | SI9933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 21 ns | 50ns | 13 ns | 29 ns | -4A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 3.1W | 4A | -20V | 2 P-Channel (Dual) | 665pF @ 10V | 58m Ω @ 4.8A, 4.5V | 1.4V @ 250μA | 4A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SIA929DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia929djt1ge3-datasheets-5811.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 1 | Other Transistors | 5 ns | 10ns | 10 ns | 22 ns | 4.3A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | -30V | 2 P-Channel (Dual) | 575pF @ 15V | 64m Ω @ 3A, 10V | 1.1V @ 250μA | 4.5A Tc | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SIA975DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia975djt1ge3-datasheets-5566.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 41mOhm | 6 | EAR99 | Tin | No | 7.8W | SIA975 | 6 | Dual | 1.9W | 2 | Other Transistors | 22 ns | 22ns | 15 ns | 32 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -400mV | -12V | 2 P-Channel (Dual) | 1500pF @ 6V | 41m Ω @ 4.3A, 4.5V | 1V @ 250μA | 26nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI4559ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4559adyt1e3-datasheets-2899.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | 58MOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.4W | DUAL | GULL WING | 260 | SI4559 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 4.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.1W 3.4W | 4.3A | 6.1 mJ | 60V | N and P-Channel | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A 3.9A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SIS932EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sis932ednt1ge3-datasheets-5907.pdf | PowerPAK® 1212-8 Dual | 1.17mm | 14 Weeks | 2 | 2.6W | 150°C | PowerPAK® 1212-8 Dual | 15 ns | 32 ns | 6A | 12V | 30V | 2.6W Ta 23W Tc | 18mOhm | 30V | 2 N-Channel (Dual) | 1000pF @ 15V | 22mOhm @ 10A, 4.5V | 1.4V @ 250μA | 6A Tc | 14nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA923AEDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia923aedjt1ge3-datasheets-5929.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | 7.8W | NO LEAD | SIA923 | 2 | Dual | 2 | 15 ns | 16ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 0.054Ohm | -20V | 2 P-Channel (Dual) | 770pF @ 10V | 54m Ω @ 3.8A, 4.5V | 900mV @ 250μA | 25nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIA923EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia923edjt1ge3-datasheets-5895.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 54mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 7.8W | 260 | SIA923 | 6 | 2 | Dual | 40 | 1.9W | 2 | Other Transistors | 15 ns | 16ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | -500 mV | 54m Ω @ 3.8A, 4.5V | 1.4V @ 250μA | 25nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI4286DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4286dyt1ge3-datasheets-5839.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 540.001716mg | No SVHC | 8 | EAR99 | No | 2.9W | GULL WING | SI4286 | 8 | Dual | 1.9W | 2 | FET General Purpose Power | 9 ns | 11ns | 7 ns | 10 ns | 7A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7A | 40V | 2 N-Channel (Dual) | 375pF @ 20V | 32.5m Ω @ 8A, 10V | 2.5V @ 250μA | 10.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SQ3985EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3985evt1ge3-datasheets-6138.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3W | MO-193AA | 3.9A | 0.145Ohm | 57 pF | 2 P-Channel (Dual) | 350pF @ 10V | 145m Ω @ 2.8A, 4.5V | 1.5V @ 250μA | 3.9A Tc | 4.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3590DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si3590dvt1e3-datasheets-5561.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 170MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | DUAL | GULL WING | 260 | SI3590 | 6 | 2 | 40 | 830mW | 2 | Other Transistors | 150°C | 5 ns | 15ns | 15 ns | 20 ns | 2.5A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 30V | N and P-Channel | 600 mV | 77m Ω @ 3A, 4.5V | 1.5V @ 250μA | 2.5A 1.7A | 4.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 53mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI6954 | 8 | 2 | Dual | 40 | 830mW | 2 | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 3.1A | 30V | 2 N-Channel (Dual) | 1 V | 53m Ω @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4804CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4804cdyt1ge3-datasheets-6283.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.2W | GULL WING | 260 | SI4804 | 8 | 2 | Dual | 30 | 3.1W | 2 | FET General Purpose Power | 17 ns | 13ns | 9 ns | 19 ns | 7.1A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4V | 8A | 30V | 2 N-Channel (Dual) | 865pF @ 15V | 2.4 V | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 8A | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SI4554DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4554dyt1ge3-datasheets-6501.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | 14 Weeks | 506.605978mg | No SVHC | 8 | Tin | No | 3.2W | 2 | 2W | 2 | 150°C | 8-SO | 690pF | 42 ns | 40ns | 18 ns | 40 ns | 8A | 20V | 40V | 1V | 3.1W 3.2W | 21mOhm | 40V | N and P-Channel | 690pF @ 20V | 24mOhm @ 6.8A, 10V | 2.2V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 24 mΩ |
