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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Switching | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DG540AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -40°C | 500MHz | 3.5mA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 20-DIP (0.300, 7.62mm) | 14 Weeks | 18V | 10V | 60Ohm | 20 | No | 3.5mA | RGB, T-Switch Configuration | Video | 900mW | 4 | 20-DIP | 500MHz | SPST | 70 ns | 50 ns | 15V | Multiplexer | Dual, Single | 10V | 60Ohm | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG540AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | 3.5mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 20-DIP (0.300, 7.62mm) | 18 Weeks | 18V | 10V | 60Ohm | 20 | No | RGB, T-Switch Configuration | Video | 4 | 20-DIP | 500MHz | SPST | 15V | Multiplexer | Dual, Single | 10V | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG541DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 3.5mA | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 200.686274mg | 18V | 10V | 60Ohm | 16 | no | No | 4 | e0 | RGB, T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | Non-Inverting | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 15-3V | 70 ns | 50 ns | 15V | 12V | Dual, Single | 10V | 4 | 20mA | 60Ohm | BREAK-BEFORE-MAKE | NO | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7218DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7218dnt1e3-datasheets-0762.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7218 | 8 | 2 | Dual | 30 | 23W | 2 | FET General Purpose Powers | S-XDSO-C6 | 15 ns | 12ns | 10 ns | 10 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 35A | 5 mJ | 30V | 2 N-Channel (Dual) | 700pF @ 15V | 25m Ω @ 8A, 10V | 3V @ 250μA | 24A | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ262EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj262ept1ge3-datasheets-0774.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 12.6mOhm | 2 N-Channel (Dual) | 550pF @ 25V 1260pF @ 25V | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V | 2.5V @ 250μA | 15A Tc 40A Tc | 10nC @ 10V, 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB90EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb90ept1ge3-datasheets-0849.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 80V | 48W | 2 N-Channel (Dual) | 1200pF @ 25V | 21.5mOhm @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ990EP-T1_GE3 | Vishay Siliconix | $1.19 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj990ept1ge3-datasheets-0851.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual Asymmetric | 100V | 48W | 2 N-Channel (Dual) | 1390pF @ 25V 650pF @ 25V | 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V | 2.5V @ 250μA | 34A Tc | 30nC @ 10V, 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ912BEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj912bept1ge3-datasheets-0855.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 48W Tc | 9mOhm | 2 N-Channel (Dual) | 3000pF @ 25V | 11mOhm @ 9A, 10V | 2V @ 250μA | 30A Tc | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ910AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.007Ohm | 42 mJ | 2 N-Channel (Dual) | 1869pF @ 15V | 7m Ω @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ260EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj260ept1ge3-datasheets-0863.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 15.5mOhm | 2 N-Channel (Dual) | 1100pF @ 25V 2500pF @ 25V | 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V | 2.5V @ 250μA | 20A Tc 54A Tc | 20nC @ 10V, 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ560EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj560ept1ge3-datasheets-1042.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 60V | 34W Tc | N and P-Channel | 1650pF @ 25V | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc 18A Tc | 30nC @ 10V, 45nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ926DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siz926dtt1ge3-datasheets-1074.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 20.2W 40W | 25V | 2 N-Channel (Dual) | 925pF @ 10V 2150pF @ 10V | 4.8m Ω @ 5A, 10V, 2.2m Ω @ 8A, 10V | 2.2V @ 250μA | 40A Tc 60A Tc | 19nC @ 10V, 41nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ992EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj992ept1ge3-datasheets-1026.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 47mOhm | 8 | EAR99 | 34W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 34W | 2 | R-PSSO-G4 | 15A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 60A | 2 N-Channel (Dual) | 446pF @ 30V | 56.2m Ω @ 3.7A, 10V | 2.5V @ 250μA | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4282EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/vishaysiliconix-sq4282eyt1ge3-datasheets-1207.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | 8-SOIC | 10 ns | 11ns | 8 ns | 34 ns | 8A | 20V | 30V | 3.9W | 2 N-Channel (Dual) | 2367pF @ 15V | 12.3mOhm @ 15A, 10V | 2.5V @ 250μA | 8A Tc | 47nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 14 Weeks | 84.99187mg | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 1206-8 ChipFET™ | 220pF | 4 ns | 12ns | 12 ns | 10 ns | 4A | 20V | 30V | 3.12W | 65mOhm | 2 N-Channel (Dual) | 220pF @ 15V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A Tc | 7nC @ 10V | Logic Level Gate | 65 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5517DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5517dut1ge3-datasheets-1188.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 8.3W | C BEND | 260 | SI5517 | 8 | 40 | 2.3W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 35ns | 55 ns | 40 ns | 7.2A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6A | 0.039Ohm | 20V | N and P-Channel | 520pF @ 10V | 39m Ω @ 4.4A, 4.5V | 1V @ 250μA | 6A | 16nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4948BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4948beyt1ge3-datasheets-1222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 120MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.4W | GULL WING | 260 | SI4948 | 8 | 2 | Dual | 30 | 2.4W | 2 | 10 ns | 15ns | 35 ns | 50 ns | -2.4A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 2 P-Channel (Dual) | -3 V | 120m Ω @ 3.1A, 10V | 3V @ 250μA | 2.4A | 22nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ951EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj951ept1ge3-datasheets-1217.pdf | PowerPAK® SO-8 Dual | 12 Weeks | 8 | 56W | 56W | 2 | PowerPAK® SO-8 Dual | 1.68nF | 30A | 20V | 30V | 56W | 2 P-Channel (Dual) | 1680pF @ 10V | 17mOhm @ 7.5A, 10V | 2.5V @ 250μA | 30A | 50nC @ 10V | Standard | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4932DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4932dyt1ge3-datasheets-1274.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 15MOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.2W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | 21 ns | 10ns | 8 ns | 26 ns | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 15m Ω @ 7A, 10V | 2.5V @ 250μA | 48nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ500AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj500aept1ge3-datasheets-1233.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 48W | N and P-Channel | 1850pF @ 20V | 27m Ω @ 6A, 10V | 2.3V @ 250μA | 30A Tc | 38.1nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7272DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7272dpt1ge3-datasheets-1489.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | unknown | e3 | 22W | C BEND | 260 | SI7272 | 8 | 30 | 3.6W | 2 | FET General Purpose Powers | Not Qualified | R-XDSO-C6 | 20 ns | 15ns | 10 ns | 22 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 60A | 0.0093Ohm | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4936bdyt1ge3-datasheets-1205.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 2.8W | GULL WING | 260 | SI4936 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | 5 ns | 25ns | 10 ns | 12 ns | 6.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 0.035Ohm | 30V | 2 N-Channel (Dual) | 530pF @ 15V | 35m Ω @ 5.9A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ710DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz710dtt1ge3-datasheets-1461.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 14 Weeks | Unknown | 6.8mOhm | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 48W | NO LEAD | 260 | SIZ710 | 6 | 2 | Dual | 40 | 4.6W | 2 | FET General Purpose Power | Not Qualified | 15ns | 12 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 27W 48W | 35A | 70A | 20V | 2 N-Channel (Half Bridge) | 820pF @ 10V | 2.2 V | 6.8m Ω @ 19A, 10V | 2.2V @ 250μA | 16A 35A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7236DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7236dpt1ge3-datasheets-1565.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 15 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 46W | C BEND | 260 | SI7236 | 8 | Dual | 30 | 3.5W | 2 | FET General Purpose Power | R-XDSO-C6 | 10 ns | 15ns | 10 ns | 60 ns | 20.7A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60A | 20V | 2 N-Channel (Dual) | 4000pF @ 10V | 5.2m Ω @ 20.7A, 4.5V | 1.5V @ 250μA | 60A | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ902DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz902dtt1ge3-datasheets-1531.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | 8 | EAR99 | Tin | No | 66W | SIZ902 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 10ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 29W 66W | 50A | 16 mJ | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4961EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq4961eyt1ge3-datasheets-1499.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 2 | 8-SO | 11 ns | 13ns | 8 ns | 36 ns | 4.4A | 20V | 60V | 3.3W | 2 P-Channel (Dual) | 1140pF @ 25V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 4.4A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7923DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7923dnt1e3-datasheets-1593.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 47mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7923 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 10 ns | 12ns | 12 ns | 38 ns | -6.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -3V | 4.3A | -30V | 2 P-Channel (Dual) | 47m Ω @ 6.4A, 10V | 3V @ 250μA | 4.3A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9926CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9926cdyt1e3-datasheets-1229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | No | 3.1W | SI9926 | 2 | Dual | 3.1W | 2 | 8-SO | 1.2nF | 10 ns | 12ns | 10 ns | 25 ns | 8A | 12V | 20V | 1.5V | 3.1W | 18mOhm | 20V | 2 N-Channel (Dual) | 1200pF @ 10V | 18mOhm @ 8.3A, 4.5V | 1.5V @ 250μA | 8A | 33nC @ 10V | Logic Level Gate | 18 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 39mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 5 mJ | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 6A | 19nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 6.5A | 5 mJ | 40V | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 19nC @ 10V | Standard |
