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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SQ4284EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sq4284eyt1ge3-datasheets-1902.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | 8 | 3.9W | 2 | Dual | 3.9W | 2 | 8-SO | 2.2nF | 10 ns | 40ns | 11 ns | 32 ns | 8A | 20V | 40V | 3.9W | 13.5mOhm | 2 N-Channel (Dual) | 2200pF @ 25V | 13.5mOhm @ 7A, 10V | 2.5V @ 250μA | 45nC @ 10V | Logic Level Gate | 13.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7913DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7913dnt1ge3-datasheets-1906.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 37MOhm | 8 | yes | EAR99 | Tin | e3 | 1.3W | C BEND | 260 | SI7913 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | Not Qualified | S-XDSO-C6 | 20 ns | 70ns | 70 ns | 72 ns | -7.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 5A | -20V | 2 P-Channel (Dual) | 37m Ω @ 7.4A, 4.5V | 1V @ 250μA | 5A | 24nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI4816BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 18.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | Single | 40 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 1W 1.25W | 2 N-Channel (Half Bridge) | 3 V | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7913DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7913dnt1ge3-datasheets-1906.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 37mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.3W | C BEND | 260 | SI7913 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 70ns | 70 ns | 72 ns | -7.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | -20V | 2 P-Channel (Dual) | 37m Ω @ 7.4A, 4.5V | 1V @ 250μA | 5A | 24nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SQ4917EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq4917eyt1ge3-datasheets-2053.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 12 Weeks | 8 | unknown | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 5W | 2 | 8A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W Tc | 8A | 2 P-Channel (Dual) | 1910pF @ 30V | 48m Ω @ 4.3A, 10V | 2.5V @ 250μA | 8A Tc | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7220DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7220dnt1ge3-datasheets-1978.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7220 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.06Ohm | 6.1 mJ | 60V | 2 N-Channel (Dual) | 60m Ω @ 4.8A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4904DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 16mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4904 | 8 | 2 | Dual | 40 | 2W | 2 | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | SILICON | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3.25W | 8A | 2 N-Channel (Dual) | 2390pF @ 20V | 16m Ω @ 5A, 10V | 2V @ 250μA | 85nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SI7212DN-T1-E3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 12 ns | 30 ns | 6.8A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4.9A | 0.036Ohm | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 4.9A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SQJQ906EL-T1_GE3 | Vishay Siliconix | $2.05 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq906elt1ge3-datasheets-2310.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 187W | 175°C | PowerPAK® 8 x 8 Dual | 10 ns | 25 ns | 160A | 20V | 40V | 187W | 3.6mOhm | 40V | 2 N-Channel (Dual) | 3238pF @ 20V | 4.3mOhm @ 5A, 10V | 2.5V @ 250μA | 160A Tc | 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ980EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjq980elt1ge3-datasheets-2325.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | unknown | 2 | 187W | 175°C | 10 ns | 21 ns | 36A | 20V | 80V | 2 N-Channel (Dual) | 1995pF @ 40V | 13.5m Ω @ 5A, 10V | 2.5V @ 250μA | 36A Tc | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ904E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjq904et1ge3-datasheets-2347.pdf | PowerPAK® 8 x 8 Dual | 4 | 14 Weeks | No SVHC | 6 | unknown | YES | 135W | SINGLE | GULL WING | 2 | R-PSSO-G4 | 100A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 75W | 300A | 0.0034Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.4m Ω @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 75nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 19.2mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | -8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 8A | 62nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7956DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 36 ns | 18 ns | 4.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SQ3585EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3585evt1ge3-datasheets-2454.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.67W | 3.57A | 0.12Ohm | N and P-Channel | 77m Ω @ 1A, 4.5V, 166m Ω @ 1A, 4.5V | 1.5V @ 250μA | 3.57A Tc 2.5A Tc | 2.5nC @ 4.5V, 3.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ906E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq906et1ge3-datasheets-2145.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 50W | 175°C | PowerPAK® 8 x 8 Dual | 14 ns | 26 ns | 95A | 20V | 40V | 50W | 2.7mOhm | 40V | 2 N-Channel (Dual) | 3600pF @ 20V | 3.3mOhm @ 5A, 10V | 3.5V @ 250μA | 95A Tc | 42nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQUN702E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-squn702et1ge3-datasheets-2463.pdf | Die | 12 Weeks | Die | 40V 200V | 48W Tc 60W Tc | N and P-Channel, Common Drain | 1474pF 1450pF 1302pF @ 20V 100V | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V | 2.5V @ 250μA, 3.5V @ 250μA | 30A Tc 20A Tc | 23nC, 14nC, 30.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4559ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4559adyt1e3-datasheets-2899.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4559 | 8 | 2 | Dual | 30 | 2W | 2 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 4.5A | 20V | 60V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 3.1W 3.4W | 4.3A | 6.1 mJ | 60V | N and P-Channel | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A 3.9A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||
| SI4963BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4963bdyt1e3-datasheets-2990.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 32mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4963 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 30 ns | 40ns | 40 ns | 80 ns | 6.5A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -600mV | 4.9A | -20V | 2 P-Channel (Dual) | 32m Ω @ 6.5A, 4.5V | 1.4V @ 250μA | 4.9A | 21nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | No SVHC | 21mOhm | 8 | yes | EAR99 | Tin | No | e3 | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | -4.4A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -900mV | 4.9A | -12V | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 4.9A | 28nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI1539CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1539cdlt1ge3-datasheets-3527.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 6 | EAR99 | Tin | No | e3 | 340mW | DUAL | GULL WING | 6 | 290mW | 2 | 150°C | 32 ns | 19ns | 10 ns | 4 ns | 700mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.7A | 0.388Ohm | N and P-Channel | 28pF @ 15V | 388m Ω @ 600mA, 10V | 2.5V @ 250μA | 700mA 500mA | 1.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI1922EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1922edht1ge3-datasheets-3847.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1922 | 6 | Dual | 30 | 740mW | 2 | FET General Purpose Power | 150°C | 22 ns | 80ns | 220 ns | 645 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 198m Ω @ 1A, 4.5V | 1V @ 250μA | 2.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI1016CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016cxt1ge3-datasheets-3861.pdf | SOT-563, SOT-666 | Lead Free | 6 | 14 Weeks | 8.193012mg | No SVHC | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | DUAL | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 11 ns | 16ns | 11 ns | 26 ns | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | N and P-Channel | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI1902DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 385MOhm | 6 | yes | EAR99 | Tin | No | e3 | 270mW | GULL WING | SI1902 | 6 | 2 | Dual | 270mW | 2 | 150°C | 10 ns | 16ns | 16 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 600 mV | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SIA527DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia527djt1ge3-datasheets-4179.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | 710μOhm | EAR99 | unknown | 7.8W | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 10 ns | 10ns | 10 ns | 22 ns | 4.5A | 8V | 12V | 12V | N and P-Channel | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1900DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si1900dlt1e3-datasheets-4332.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 480mOhm | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 270mW | GULL WING | 260 | SI1900 | 6 | 2 | Dual | 40 | 270mW | 2 | FET General Purpose Power | Not Qualified | 5 ns | 8ns | 8 ns | 8 ns | 630mA | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.59A | 30V | 2 N-Channel (Dual) | 3 V | 480m Ω @ 590mA, 10V | 3V @ 250μA | 590mA | 1.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SIA519EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia519edjt1ge3-datasheets-4324.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 40MOhm | 6 | EAR99 | Tin | No | e3 | 7.8W | 260 | SIA519 | 6 | 40 | 1.9W | 2 | Other Transistors | 4.5A | 12V | SILICON | DRAIN | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 20V | N and P-Channel | 350pF @ 10V | 40m Ω @ 4.2A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIA533EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia533edjt1ge3-datasheets-4354.pdf | PowerPAK® SC-70-6 Dual | 800μm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 34MOhm | 6 | EAR99 | 7.8W | C BEND | NOT SPECIFIED | SIA533 | 6 | 2 | Single | NOT SPECIFIED | 7.8W | 2 | Other Transistors | Not Qualified | 150°C | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | N and P-Channel | 420pF @ 6V | 400 mV | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI1026X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1026xt1ge3-datasheets-4252.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | Unknown | 3Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1026 | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | 15 ns | 20 ns | 500mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | 2 N-Channel (Dual) | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA | 0.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI3900DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si3900dvt1e3-datasheets-4514.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 125mOhm | 6 | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI3900 | 6 | 2 | Dual | 40 | 830mW | 2 | 10 ns | 30ns | 30 ns | 14 ns | 2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 2A | 20V | 2 N-Channel (Dual) | 600 mV | 125m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI9933CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9933cdyt1ge3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 58mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.1W | GULL WING | 260 | SI9933 | 8 | 2 | Dual | 30 | 3.1W | 2 | Other Transistors | 21 ns | 50ns | 13 ns | 29 ns | 4A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 4A | 2 P-Channel (Dual) | 665pF @ 10V | -1.4 V | 58m Ω @ 4.8A, 4.5V | 1.4V @ 250μA | 26nC @ 10V | Logic Level Gate |
