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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| SIZ346DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz346dtt1ge3-datasheets-9350.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16W 16.7W | 30V | 2 N-Channel (Dual) | 325pF @ 15V 650pF @ 15V | 28.5m Ω @ 10A, 10V, 11.5m Ω @ 14.4A, 10V | 2.2V @ 250μA, 2.4V @ 250μA | 17A Tc 30A Tc | 5nC @ 4.5V, 9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 10A | 2 N-Channel (Dual) | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||
| SIA907EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia907edjtt1ge3-datasheets-9247.pdf | PowerPAK® SC-70-6 Dual | Contains Lead | 6 | 28.009329mg | 57mOhm | 6 | EAR99 | No | 7.8W | 6 | Dual | 1.9W | 2 | Other Transistors | 5 ns | 10ns | 10 ns | 30 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 57m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A Tc | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SIR770DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sir770dpt1ge3-datasheets-9461.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | 17.8W | C BEND | 260 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 8 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 2.8 V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||
| SI4943CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 19.2MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 62nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||
| SI1036X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-si1036xt1ge3-datasheets-9854.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 540mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 220mW | 2 N-Channel (Dual) | 36pF @ 15V | 540m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SQ1922AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sq1922aeeht1ge3-datasheets-9933.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 | 20V | 1.5W Tc | 2 N-Channel (Dual) | 60pF @ 10V | 300mOhm @ 400mA, 4.5V | 2.5V @ 250μA | 850mA Tc | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1912AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | /files/vishaysiliconix-sq1912aeeht1ge3-datasheets-9964.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | 6 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 66 ns | 108ns | 390 ns | 715 ns | 800mA | 12V | 20V | 1.5W | 2 N-Channel (Dual) | 27pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.25nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| SIZ328DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz328dtt1ge3-datasheets-0098.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 25V | 2.9W Ta 15W Tc 3.6W Ta 16.2W Tc | 2 N-Channel (Dual) | 325pF @ 10V 600pF @ 10V | 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V | 2.5V @ 250μA | 11.1A Ta 25.3A Tc 15A Ta 30A Tc | 6.9nC @ 10V, 11.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ200DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz200dtt1ge3-datasheets-0138.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (3.3x3.3) | 30V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 1510pF @ 15V 1600pF @ 15V | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V | 2.4V @ 250μA | 22A Ta 61A Tc 22A Ta 60A Tc | 28nC @ 10V, 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS944ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs944enwt1ge3-datasheets-0142.pdf | PowerPAK® 1212-8W Dual | 14 Weeks | PowerPAK® 1212-8W Dual | 40V | 27.8W Tc | 2 N-Channel (Dual) | 615pF @ 25V | 25mOhm @ 1.25A, 10V | 2.5V @ 250μA | 6A Tc | 10nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS903DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sis903dnt1ge3-datasheets-0127.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | PowerPAK® 1212-8 Dual | 20V | 2.6W Ta 23W Tc | 2 P-Channel (Dual) | 2565pF @ 10V | 20.1mOhm @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 42nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS966ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqs966enwt1ge3-datasheets-0180.pdf | PowerPAK® 1212-8W Dual | PowerPAK® 1212-8W Dual | 60V | 27.8W Tc | 2 N-Channel (Dual) | 572pF @ 25V | 36mOhm @ 1.25A, 10V | 2.5V @ 250μA | 6A Tc | 8.8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7972DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si7972dpt1ge3-datasheets-0329.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 22W | 2 N-Channel (Dual) | 1050pF @ 30V | 18m Ω @ 11A, 10V | 2.7V @ 250μA | 8A Tc | 11nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ244EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj244ept1ge3-datasheets-0310.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 40V | 27W Tc 48W Tc | 2 N-Channel (Dual) Asymmetrical | 1200pF @ 25V 2800pF @ 25V | 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V | 2.5V @ 250μA | 20A Tc 60A Tc | 20nC @ 10V, 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ988DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-siz988dtt1ge3-datasheets-0357.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® | 30V | 20.2W 40W | 2 N-Channel (Dual) | 1000pF @ 15V 2425pF @ 15V | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 40A Tc 60A Tc | 10.5nC @ 4.5V, 23.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ350DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz350dtt1ge3-datasheets-0321.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 940pF @ 15V | 6.75mOhm @ 15A, 10V | 2.4V @ 250μA | 18.5A Ta 30A Tc | 20.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ998DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | /files/vishaysiliconix-siz998dtt1ge3-datasheets-0405.pdf | 8-PowerWDFN | 14 Weeks | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 20V | 30V | 20.2W 32.9W | 2 N-Channel (Dual), Schottky | 930pF @ 15V 2620pF @ 15V | 6.7m Ω @ 15A, 10V, 2.8m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 19.8nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ980DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-siz980dtt1ge3-datasheets-0423.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 20W 66W | 20A | 90A | 0.0067Ohm | 11.2 mJ | 2 N-Channel (Dual), Schottky | 930pF @ 15V 4600pF @ 15V | 6.7m Ω @ 15A, 10V, 1.6m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 35nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||
| SQJ202EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj202ept1ge3-datasheets-0335.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 12V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 6V | 6.5m Ω @ 15A, 10V | 2V @ 250μA | 20A 60A | 22nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4949EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2017 | /files/vishaysiliconix-sq4949eyt1ge3-datasheets-0472.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 1 | 8-SOIC | 7 ns | 9ns | 8 ns | 28 ns | 7.5A | 20V | 30V | 3.3W | 2 P-Channel (Dual) | 1020pF @ 25V | 35mOhm @ 5.9A, 10V | 2.5V @ 250μA | 7.5A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SIZ904DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz904dtt1ge3-datasheets-0342.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | Lead Free | 6 | 14 Weeks | 24mOhm | 8 | EAR99 | No | 33W | SIZ904 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 9ns | 8 ns | 14 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20W 33W | 30A | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A 16A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SI4922BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | 2 N-Channel (Dual) | 2070pF @ 15V | 1.8 V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | ||||||||||||||||||||||||||
| SISF00DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf00dnt1ge3-datasheets-0434.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 30V | 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2700pF @ 15V | 5mOhm @ 10A, 10V | 2.1V @ 250μA | 60A Tc | 53nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ348DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz348dtt1ge3-datasheets-0284.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 820pF @ 15V | 7.12mOhm @ 15A, 10V | 2.4V @ 250μA | 18A Ta 30A Tc | 18.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1028X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1028xt1ge3-datasheets-0746.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.7mm | 6 | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 220mW | FLAT | Dual | 220mW | 2 | 8 ns | 9 ns | 480mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 2 N-Channel (Dual) | 16pF @ 15V | 650m Ω @ 500mA, 10V | 2.5V @ 250μA | 2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SQ4937EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/vishaysiliconix-sq4937eyt1ge3-datasheets-0291.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 1 | 8-SOIC | 6 ns | 8ns | 8 ns | 15 ns | 5A | 20V | 30V | 3.3W | 2 P-Channel (Dual) | 480pF @ 25V | 75mOhm @ 3.9A, 10V | 2.5V @ 250μA | 5A Tc | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SIZF916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf916dtt1ge3-datasheets-0522.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1060pF @ 15V 4320pF @ 15V | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23A Ta 40A Tc | 22nC @ 10V, 95nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1034CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1034cxt1ge3-datasheets-0871.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | FET General Purpose Power | 11 ns | 16ns | 11 ns | 26 ns | 610mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI1926DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 3 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | 6 | 30 | 2 | FET General Purpose Power | R-PDSO-G6 | 6.5 ns | 12ns | 14 ns | 13 ns | 370mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate |
