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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Factory Lead Time | Weight | Number of Pins | Radiation Hardening | Reach Compliance Code | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Drain to Source Voltage (Vdss) | Power Dissipation-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK8A60W,S4VX | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 570pF | 16 Weeks | Single | 30W | TO-220SIS | 570pF | 20ns | 5.5 ns | 70 ns | 8A | 30V | 600V | 30W Tc | 420mOhm | 600V | N-Channel | 570pF @ 300V | 500mOhm @ 4A, 10V | 3.7V @ 400μA | 8A Ta | 18.5nC @ 10V | Super Junction | 500 mΩ | 10V | ±30V | |||||||||||||
| TK11A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 25ns | 15 ns | 11A | 30V | 600V | 45W Tc | N-Channel | 1550pF @ 25V | 650m Ω @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| TK14A45DA(STA4,QM) | Toshiba Semiconductor and Storage | $11.53 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 13.5A | 450V | N-Channel | 410mOhm @ 6.8A, 10V | 13.5A | 410 mΩ | ||||||||||||||||||||||||||||||
| TK10A60W,S4VX | Toshiba Semiconductor and Storage | $1.88 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 700pF | 16 Weeks | unknown | 30W | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 30W Tc | 600V | N-Channel | 700pF @ 300V | 380m Ω @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||
| TK10Q60W,S1VQ | Toshiba Semiconductor and Storage | $3.83 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-251-3 Stub Leads, IPak | 16 Weeks | 3.949996g | 3 | No | 1 | Single | I-PAK | 700pF | 45 ns | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 600V | 80W Tc | 327mOhm | 600V | N-Channel | 700pF @ 300V | 430mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | 430 mΩ | 10V | ±30V | ||||||||||
| TK25V60X,LQ | Toshiba Semiconductor and Storage | $6.07 |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 4-VSFN Exposed Pad | 16 Weeks | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 135m Ω @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK16A60W,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 52 Weeks | TO-220 | 600V | 40W Tc | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK12A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.55nF | 25ns | 15 ns | 12A | 30V | 550V | 45W Tc | N-Channel | 1550pF @ 25V | 570mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 28nC @ 10V | 570 mΩ | 10V | ±30V | |||||||||||||||||
| TK13A55DA(STA4,QM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 40ns | 15 ns | 12.5A | 30V | 550V | 45W Tc | N-Channel | 1800pF @ 25V | 480m Ω @ 6.3A, 10V | 4V @ 1mA | 12.5A Ta | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| TK13A50DA(STA4,Q,M | Toshiba Semiconductor and Storage | $2.35 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 67 | No | 45W | 25ns | 15 ns | 110 ns | 12.5A | 30V | 45W Tc | 500V | N-Channel | 1550pF @ 25V | 470m Ω @ 6.3A, 10V | 4V @ 1mA | 12.5A Ta | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||
| TK17E65W,S1X | Toshiba Semiconductor and Storage | $2.90 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 17.3A | 650V | 165W Tc | N-Channel | 1800pF @ 300V | 200m Ω @ 8.7A, 10V | 3.5V @ 900μA | 17.3A Ta | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| TK16A60W,S4VX | Toshiba Semiconductor and Storage | $2.52 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-220-3 Full Pack | 1.35nF | 16 Weeks | 40W | 25ns | 5 ns | 100 ns | 15.8A | 30V | 40W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||
| TK14A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 14A | 450V | N-Channel | 340mOhm @ 7A, 10V | 14A | 340 mΩ | |||||||||||||||||||||||||||||||
| TK16A60W5,S4VX | Toshiba Semiconductor and Storage | $2.56 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 1.35nF | 16 Weeks | Single | 40W | 15.8A | 40W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 1.5mA | 15.8A Ta | 43nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||
| TK12E60W,S1VX | Toshiba Semiconductor and Storage | $0.46 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 16 Weeks | No | Single | 110W | 1 | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 110W Tc | 600V | N-Channel | 890pF @ 300V | 300m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||
| TK13A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.8nF | 40ns | 15 ns | 13A | 30V | 500V | 45W Tc | N-Channel | 1800pF @ 25V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 38nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||
| TK16E60W,S1VX | Toshiba Semiconductor and Storage | $2.44 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 16 Weeks | No | Single | 130W | 1 | 25ns | 5 ns | 100 ns | 15.8A | 30V | 130W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||
| TK14A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 2.3nF | 50ns | 25 ns | 14A | 30V | 550V | 50W Tc | N-Channel | 2300pF @ 25V | 370mOhm @ 7A, 10V | 4V @ 1mA | 14A Ta | 40nC @ 10V | 370 mΩ | 10V | ±30V | |||||||||||||||||
| TK20V60W,LVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | 4-DFN-EP (8x8) | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 156W Tc | 170mOhm | 600V | N-Channel | 1680pF @ 300V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | Super Junction | 170 mΩ | 10V | ±30V | ||||||||||||
| TK12A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.8nF | 40ns | 15 ns | 12A | 30V | 600V | 45W Tc | N-Channel | 1800pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 38nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||
| TK56E12N1,S1X | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | Single | 168W | 20ns | 23 ns | 73 ns | 56A | 20V | 168W Tc | 120V | N-Channel | 4200pF @ 60V | 7m Ω @ 28A, 10V | 4V @ 1mA | 56A Ta | 69nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| TK7A65W,S5X | Toshiba Semiconductor and Storage | $6.35 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 490pF | 6.8A | 650V | 30W Tc | N-Channel | 490pF @ 300V | 780mOhm @ 3.4A, 10V | 3.5V @ 250μA | 6.8A Ta | 15nC @ 10V | 780 mΩ | 10V | ±30V | ||||||||||||||||||||||||
| TK9A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $4.26 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 800pF | 20ns | 12 ns | 9A | 30V | 450V | 40W Tc | N-Channel | 800pF @ 25V | 770mOhm @ 4.5A, 10V | 4V @ 1mA | 9A Ta | 16nC @ 10V | 770 mΩ | 10V | ±30V | |||||||||||||||||
| TK16V60W,LVQ | Toshiba Semiconductor and Storage | $3.95 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 4-VSFN Exposed Pad | 5 | No | 1 | 50 ns | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 139W Tc | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||
| TK6A65W,S5X | Toshiba Semiconductor and Storage | $6.74 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 390pF | 5.8A | 650V | 30W Tc | N-Channel | 390pF @ 300V | 1Ohm @ 2.9A, 10V | 3.5V @ 180μA | 5.8A Ta | 11nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||
| TK8A65W,S5X | Toshiba Semiconductor and Storage | $4.72 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 570pF | 7.8A | 650V | 30W Tc | N-Channel | 570pF @ 300V | 650mOhm @ 3.9A, 10V | 3.5V @ 300μA | 7.8A Ta | 16nC @ 10V | 650 mΩ | 10V | ±30V | ||||||||||||||||||||||||
| TK20A60W5,S5VX | Toshiba Semiconductor and Storage | $4.22 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.8nF | 90 ns | 45ns | 6 ns | 100 ns | 20A | 30V | 600V | 45W Tc | 150mOhm | 600V | N-Channel | 1800pF @ 300V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 55nC @ 10V | 175 mΩ | 10V | ±30V | ||||||||||
| TK8A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $8.93 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 800pF | 20ns | 12 ns | 7.5A | 30V | 550V | 40W Tc | N-Channel | 800pF @ 25V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 7.5A Ta | 16nC @ 10V | 1.07 Ω | 10V | ±30V | |||||||||||||||||
| TK10V60W,LVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | 4-DFN-EP (8x8) | 700pF | 45 ns | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 600V | 88.3W Tc | 380mOhm | 600V | N-Channel | 700pF @ 300V | 380mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 380 mΩ | 10V | ±30V | ||||||||||||
| TK10J80E,S1E | Toshiba Semiconductor and Storage | $5.01 |
Min: 1 Mult: 1 |
download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 10A | 30V | 800V | 250W Tc | 700mOhm | N-Channel | 2000pF @ 25V | 1Ohm @ 5A, 10V | 4V @ 1mA | 10A Ta | 46nC @ 10V | 1 Ω | 10V | ±30V |
