| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK35S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 58W | 1 | DPAK+ | 1.37nF | 19 ns | 9ns | 12 ns | 35 ns | 35A | 20V | 40V | 58W Tc | N-Channel | 1370pF @ 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 35A Ta | 28nC @ 10V | 10.3 Ω | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK5P50D(T6RSS-Q) | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 5A | 30V | 500V | 80W Tc | N-Channel | 490pF @ 25V | 1.5 Ω @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK5P53D(T6RSS-Q) | Toshiba Semiconductor and Storage | $4.46 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 16 Weeks | Unknown | 3 | No | Single | 80W | 1 | D-Pak | 540pF | 40 ns | 18ns | 8 ns | 55 ns | 5A | 30V | 525V | 2.4V | 80W Tc | 1.5Ohm | N-Channel | 540pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | |||||||||||||||||||||||||
| TPN2R503NC,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 2.23nF | 17 Weeks | 2.5mOhm | 8 | Single | 35W | 9ns | 24 ns | 68 ns | 40A | 20V | 700mW Ta 35W Tc | 30V | N-Channel | 2230pF @ 15V | 2.5m Ω @ 20A, 10V | 2.3V @ 500μA | 40A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK2Q60D(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 18 Weeks | 3 | No | Single | 60W | 1 | 15ns | 7 ns | 2A | 30V | 600V | 60W Tc | N-Channel | 280pF @ 25V | 4.3 Ω @ 1A, 10V | 4.4V @ 1mA | 2A Ta | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TPH1110ENH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 18 Weeks | 850.995985mg | 8 | 1 | 14 ns | 5.2ns | 4.5 ns | 19 ns | 7.2A | 20V | 1.6W Ta 42W Tc | 200V | N-Channel | 600pF @ 100V | 114m Ω @ 3.6A, 10V | 4V @ 200μA | 7.2A Ta | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPCA8128,LQ(CM | Toshiba Semiconductor and Storage | $1.10 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 4.8nF | 11ns | 135 ns | 34A | 20V | 30V | 1.6W Ta 45W Tc | P-Channel | 4800pF @ 10V | 4.8mOhm @ 17A, 10V | 2V @ 500μA | 34A Ta | 115nC @ 10V | 4.8 mΩ | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||
| TK40S10K3Z(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DPAK+ | 3.11nF | 22ns | 13 ns | 40A | 20V | 100V | 93W Tc | N-Channel | 3110pF @ 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 40A Ta | 61nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK6P53D(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | D-Pak | 600pF | 18ns | 8 ns | 6A | 30V | 525V | 100W Tc | N-Channel | 600pF @ 25V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 6A Ta | 12nC @ 10V | 1.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK7P50D(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | 100W | 1 | D-Pak | 600pF | 18ns | 8 ns | 7A | 30V | 500V | 100W Tc | N-Channel | 600pF @ 25V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 7A Ta | 12nC @ 10V | 1.22 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TK5A65W,S5X | Toshiba Semiconductor and Storage | $4.38 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | 5.2A | 650V | 30W Tc | N-Channel | 380pF @ 300V | 1.2 Ω @ 2.6A, 10V | 3.5V @ 170μA | 5.2A Ta | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK9A90E,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 1 | Single | TO-220SIS | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 9A | 30V | 900V | 50W Tc | 1Ohm | N-Channel | 2000pF @ 25V | 1.3Ohm @ 4.5A, 10V | 4V @ 900μA | 9A Ta | 46nC @ 10V | 1.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK10A60E,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk10a60es5x-datasheets-1000.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 750mOhm | 1 | Single | 10A | 600V | 45W Tc | N-Channel | 1300pF @ 25V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TK8A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.35nF | 22ns | 15 ns | 8A | 30V | 650V | 45W Tc | N-Channel | 1350pF @ 25V | 840mOhm @ 4A, 10V | 4V @ 1mA | 8A Ta | 25nC @ 10V | 840 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TK10E60W,S1VX | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-220-3 | 16 Weeks | Single | 100W | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 100W Tc | 600V | N-Channel | 700pF @ 300V | 380m Ω @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK72A12N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 64 ns | 33ns | 37 ns | 120 ns | 72A | 20V | 45W Tc | 120V | N-Channel | 8100pF @ 60V | 4.5m Ω @ 36A, 10V | 4V @ 1mA | 72A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK5A60W,S4VX | Toshiba Semiconductor and Storage | $2.27 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 380pF | 16 Weeks | Single | 30W | 18ns | 7 ns | 50 ns | 5.4A | 30V | 30W Tc | 600V | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK100A06N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 10.5nF | 110 ns | 67ns | 64 ns | 180 ns | 100A | 20V | 60V | 45W Tc | 2.2mOhm | 60V | N-Channel | 10500pF @ 30V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 100A Tc | 140nC @ 10V | 2.7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||
| TK14N65W,S1F | Toshiba Semiconductor and Storage | $4.10 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 1.3nF | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 130W Tc | 220mOhm | 650V | N-Channel | 1300pF @ 300V | 250mOhm @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 250 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||
| TK35N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 4.1nF | 70 ns | 30ns | 8 ns | 150 ns | 35A | 30V | 650V | 270W Tc | 68mOhm | 650V | N-Channel | 4100pF @ 300V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 35A Ta | 100nC @ 10V | 80 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK17N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | TO-247 | 1.8nF | 17.3A | 650V | 165W Tc | N-Channel | 1800pF @ 300V | 200mOhm @ 8.7A, 10V | 3.5V @ 900μA | 17.3A Ta | 45nC @ 10V | 200 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TK28A65W,S5X | Toshiba Semiconductor and Storage | $4.77 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 3nF | 27.6A | 650V | 45W Tc | N-Channel | 3000pF @ 300V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 27.6A Ta | 75nC @ 10V | 110 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK100S04N1L,LQ | Toshiba Semiconductor and Storage | $2.38 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | DPAK+ | 5.49nF | 23 ns | 8ns | 19 ns | 80 ns | 100A | 20V | 40V | 100W Tc | 1.9mOhm | 40V | N-Channel | 5490pF @ 10V | 2.3mOhm @ 50A, 10V | 2.5V @ 500μA | 100A Ta | 76nC @ 10V | 2.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TK58A06N1,S4X | Toshiba Semiconductor and Storage | $1.57 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 33 ns | 11ns | 17 ns | 56 ns | 58A | 20V | 35W Tc | 60V | N-Channel | 3400pF @ 30V | 5.4m Ω @ 29A, 10V | 4V @ 500μA | 58A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TK35A08N1,S4X | Toshiba Semiconductor and Storage | $0.89 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 28 ns | 11ns | 8.8 ns | 35 ns | 35A | 20V | 80V | 30W Tc | 55A | N-Channel | 1700pF @ 40V | 12.2m Ω @ 17.5A, 10V | 4V @ 300μA | 35A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK14E65W,S1X | Toshiba Semiconductor and Storage | $9.92 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 130W Tc | 650V | N-Channel | 1300pF @ 300V | 250m Ω @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK25A60X,S5X | Toshiba Semiconductor and Storage | $2.92 |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 2.4nF | 25A | 600V | 45W Tc | N-Channel | 2400pF @ 300V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK31J60W,S1VQ | Toshiba Semiconductor and Storage | $3.93 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-3P-3, SC-65-3 | 3nF | 16 Weeks | Single | 230W | TO-3P(N) | 3nF | 30.8A | 600V | 230W Tc | 88mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK34A10N1,S4X | Toshiba Semiconductor and Storage | $1.30 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 31 ns | 12ns | 18 ns | 50 ns | 34A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 35W Tc | TO-220AB | 75A | 0.0095Ohm | 64 mJ | N-Channel | 2600pF @ 50V | 9.5m Ω @ 17A, 10V | 4V @ 500μA | 34A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| SSM3J118TU(TE85L) | Toshiba Semiconductor and Storage | $1.04 |
Min: 1 Mult: 1 |
download | U-MOSII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 3-SMD, Flat Lead | 52 Weeks | 3 | unknown | Single | 800mW | 1.4A | 30V | 500mW Ta | -30V | P-Channel | 137pF @ 15V | 240m Ω @ 650mA, 10V | 1.4A Ta | 4V 10V | ±20V |
Please send RFQ , we will respond immediately.