| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | ECCN Code | Radiation Hardening | Reach Compliance Code | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SSM3K15CT(TPL3) | Toshiba Semiconductor and Storage | $0.04 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SC-101, SOT-883 | 3 | No | Single | 100mW | FET General Purpose Powers | 100mA | 20V | 100mW Ta | 0.1A | 30V | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SSM5N15FE(TE85L,F) | Toshiba Semiconductor and Storage | $0.69 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SOT-553 | 12 Weeks | EAR99 | unknown | 2 | Dual | FET General Purpose Powers | 50 ns | 180 ns | 100mA | 1.5V | 30V | 150mW Ta | 0.1A | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SSM5N15FU,LF | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 5-TSSOP, SC-70-5, SOT-353 | 16 Weeks | 30V | 200mW Ta | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J112TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 3-SMD, Flat Lead | 3 | 12 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 800mW Ta | 1.1A | 0.79Ohm | P-Channel | 86pF @ 15V | 390m Ω @ 500mA, 10V | 1.8V @ 100μA | 1.1A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TK5P60W,RVQ | Toshiba Semiconductor and Storage | $1.77 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | Single | 18ns | 7 ns | 50 ns | 5.4A | 30V | 600V | 60W Tc | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R306PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerVDFN | 8 Weeks | 60V | 960mW Ta 170W Tc | N-Channel | 8100pF @ 30V | 1.34m Ω @ 50A, 10V | 2.5V @ 1mA | 100A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK90S06N1L,LQ | Toshiba Semiconductor and Storage | $2.36 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 90A | 10V | 60V | 157W Tc | N-Channel | 5400pF @ 10V | 3.3m Ω @ 45A, 10V | 2.5V @ 500μA | 90A Ta | 81nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK14G65W,RQ | Toshiba Semiconductor and Storage | $3.49 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 13.7A | 650V | 130W Tc | N-Channel | 1300pF @ 300V | 250m Ω @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPHR9003NL,L1Q | Toshiba Semiconductor and Storage | $1.34 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 12 Weeks | 850.995985mg | 8 | No | DUAL | FLAT | 1 | Single | 1 | S-PDSO-F5 | 23 ns | 9.6ns | 15 ns | 89 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.6W Ta 78W Tc | 200A | N-Channel | 6900pF @ 15V | 0.9m Ω @ 30A, 10V | 2.3V @ 1mA | 60A Tc | 74nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TPN4R203NC,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 1.37nF | 16 Weeks | 2.5mOhm | 8 | Single | 5ns | 14 ns | 52 ns | 23A | 20V | 30V | 700mW Ta 22W Tc | N-Channel | 1370pF @ 15V | 4.2m Ω @ 11.5A, 10V | 2.3V @ 200μA | 23A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPH6R30ANL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 100V | 2.5W Ta 54W Tc | N-Channel | 4300pF @ 50V | 6.3m Ω @ 22.5A, 10V | 2.5V @ 500μA | 66A Ta 45A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8065-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 1.35nF | 2.1ns | 2.4 ns | 13A | 20V | 30V | 1W Ta | N-Channel | 1350pF @ 10V | 11.6mOhm @ 6.5A, 10V | 2.3V @ 200μA | 13A Ta | 20nC @ 10V | 11.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK2P60D(TE16L1,NQ) | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | 18 Weeks | 3 | No | Single | 60W | 1 | PW-MOLD | 280pF | 35 ns | 15ns | 7 ns | 55 ns | 2A | 30V | 600V | 60W Tc | N-Channel | 280pF @ 25V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 2A Ta | 7nC @ 10V | 4.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK60P03M1,RQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DPAK | 2.7nF | 4.3ns | 11 ns | 60A | 20V | 30V | 63W Tc | N-Channel | 2700pF @ 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500μA | 60A Ta | 40nC @ 10V | 6.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TPC8133,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 2.9nF | 8ns | 100 ns | 9A | 20V | 40V | 1W Ta | P-Channel | 2900pF @ 10V | 15mOhm @ 4.5A, 10V | 2V @ 500μA | 9A Ta | 64nC @ 10V | 15 mΩ | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||||
| TJ8S06M3L(T6L1,NQ) | Toshiba Semiconductor and Storage | $3.93 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 6ns | 34 ns | 8A | 10V | 60V | 27W Tc | P-Channel | 890pF @ 10V | 104m Ω @ 4A, 10V | 3V @ 1mA | 8A Ta | 19nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK8S06K3L(T6L1,NQ) | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 7ns | 4 ns | 8A | 20V | 60V | 25W Tc | N-Channel | 400pF @ 10V | 54m Ω @ 4A, 10V | 3V @ 1mA | 8A Ta | 10nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK10S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 410pF | 7ns | 4 ns | 10A | 20V | 40V | 25W Tc | N-Channel | 410pF @ 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10A Ta | 10nC @ 10V | 28 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK3P50D,RQ(S | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | 60W | 1 | 20ns | 10 ns | 3A | 30V | 500V | 60W Tc | N-Channel | 280pF @ 25V | 3 Ω @ 1.5A, 10V | 4.4V @ 1mA | 3A Ta | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TPN3R704PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 8 | 80A | 40V | 630mW Ta 86W Tc | N-Channel | 2500pF @ 20V | 3.7m Ω @ 40A, 10V | 2.4V @ 0.2mA | 80A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN2R304PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-TSON Advance (3.3x3.3) | 3.6nF | 80A | 40V | 630mW Ta 104W Tc | N-Channel | 3600pF @ 20V | 2.3mOhm @ 40A, 10V | 2.4V @ 0.3mA | 80A Tc | 41nC @ 10V | 2.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPH2R608NH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 150A | 75V | 142W Tc | N-Channel | 6000pF @ 37.5V | 2.6m Ω @ 50A, 10V | 4V @ 1mA | 150A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J304T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | No | 1 | Single | 700mW | 1 | TSM | 335pF | 20 ns | 20 ns | 2.3A | 8V | 20V | 700mW Ta | 172mOhm | -20V | P-Channel | 335pF @ 10V | 127mOhm @ 1A, 4V | 2.3A Ta | 6.1nC @ 4V | 127 mΩ | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||
| TPH12008NH,L1Q | Toshiba Semiconductor and Storage | $0.86 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 18 Weeks | 8 | EAR99 | unknown | Single | 48W | FET General Purpose Power | 5ns | 7.4 ns | 24 ns | 24A | 20V | 1.6W Ta 48W Tc | 44A | 80V | N-Channel | 1900pF @ 40V | 12.3m Ω @ 12A, 10V | 4V @ 300μA | 24A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TJ10S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $3.14 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 7ns | 40 ns | 10A | 10V | 40V | 27W Tc | P-Channel | 930pF @ 10V | 44m Ω @ 5A, 10V | 3V @ 1mA | 10A Ta | 19nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK20S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage | $0.52 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 780pF | 8 ns | 16ns | 24 ns | 6 ns | 20A | 20V | 60V | 38W Tc | N-Channel | 780pF @ 10V | 29mOhm @ 10A, 10V | 3V @ 1mA | 20A Ta | 18nC @ 10V | 29 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TJ15S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $3.89 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 13ns | 62 ns | 15A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 41W Tc | 29 mJ | P-Channel | 1770pF @ 10V | 50m Ω @ 7.5A, 10V | 3V @ 1mA | 15A Ta | 36nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||
| TK20S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 820pF | 8 ns | 16ns | 24 ns | 6 ns | 20A | 20V | 40V | 38W Tc | N-Channel | 820pF @ 10V | 14mOhm @ 10A, 10V | 3V @ 1mA | 20A Ta | 18nC @ 10V | 14 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TJ20S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $3.19 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 16ns | 90 ns | 20A | 10V | 40V | 41W Tc | P-Channel | 1850pF @ 10V | 22.2m Ω @ 10A, 10V | 3V @ 1mA | 20A Ta | 37nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK30S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 58W | 1 | DPAK+ | 1.35nF | 10ns | 11 ns | 30A | 20V | 60V | 58W Tc | N-Channel | 1350pF @ 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 30A Ta | 28nC @ 10V | 18 Ω | 6V 10V | ±20V |
Please send RFQ , we will respond immediately.