| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Radiation Hardening | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TJ50S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 77ns | 195 ns | 50A | 10V | 60V | 90W Tc | P-Channel | 6290pF @ 10V | 13.8m Ω @ 25A, 10V | 3V @ 1mA | 50A Ta | 124nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||
| TJ60S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-XSSO-G2 | 96ns | 240 ns | 60A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 90W Tc | 120A | 0.0094Ohm | 146 mJ | P-Channel | 6510pF @ 10V | 6.3m Ω @ 30A, 10V | 3V @ 1mA | 60A Ta | 125nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||
| TK4A60DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 12 Weeks | 3 | No | 35W | 18ns | 8 ns | 3.5A | 30V | 600V | N-Channel | 490pF @ 25V | 2.2 Ω @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| TK55S10N1,LQ | Toshiba Semiconductor and Storage | $4.53 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 11 ns | 11ns | 19 ns | 51 ns | 55A | 20V | 157W Tc | 100V | N-Channel | 3280pF @ 10V | 6.5m Ω @ 27.5A, 10V | 4V @ 500μA | 55A Ta | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK7E80W,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 110W Tc | N-Channel | 700pF @ 300V | 950mOhm @ 3.3A, 10V | 4V @ 280μA | 6.5A Ta | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20C60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 165W Tc | 130mOhm | 600V | N-Channel | 1680pF @ 300V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 155 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK31E60W,S1VX | Toshiba Semiconductor and Storage | $1.45 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 16 Weeks | Single | 230W | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 88m Ω @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK35N65W5,S1F | Toshiba Semiconductor and Storage | $4.93 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | 110 ns | 55ns | 8 ns | 150 ns | 35A | 30V | 270W Tc | 650V | N-Channel | 4100pF @ 300V | 95m Ω @ 17.5A, 10V | 4.5V @ 2.1mA | 35A Ta | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK31J60W5,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 3nF | 16 Weeks | Single | 230W | TO-3P(N) | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 230W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 105nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK31A60W,S4VX | Toshiba Semiconductor and Storage | $1.97 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 3nF | 16 Weeks | Single | 45W | TO-220SIS | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 45W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TPCC8002-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8002hte12lq-datasheets-6257.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 2.5nF | 2.8ns | 5.9 ns | 22A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2500pF @ 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 22A Ta | 27nC @ 10V | 8.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK16G60W,RVQ | Toshiba Semiconductor and Storage | $2.54 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | Single | D2PAK | 1.35nF | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 130W Tc | 190mOhm | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 190 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TK15A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.65 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 50W | 50ns | 25 ns | 15A | 30V | 50W Tc | 600V | N-Channel | 2600pF @ 25V | 370m Ω @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK18A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshiba-tk18a50dsta4qm-datasheets-2651.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 2.6nF | 50ns | 25 ns | 18A | 30V | 500V | 50W Tc | N-Channel | 2600pF @ 25V | 270mOhm @ 9A, 10V | 4V @ 1mA | 18A Ta | 45nC @ 10V | 270 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK19A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $15.57 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 2.6nF | 50ns | 25 ns | 19A | 30V | 450V | 50W Tc | N-Channel | 2600pF @ 25V | 250mOhm @ 9.5A, 10V | 4V @ 1mA | 19A Ta | 45nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK12A60W,S4VX | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 890pF | 16 Weeks | 35W | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 35W Tc | 600V | N-Channel | 890pF @ 300V | 300m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK25E60X5,S1X | Toshiba Semiconductor and Storage | $20.62 |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 | 16 Weeks | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 140m Ω @ 7.5A, 10V | 4.5V @ 1.2mA | 25A Ta | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK31V60W,LVQ | Toshiba Semiconductor and Storage | $1.02 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | Single | 4-DFN-EP (8x8) | 3nF | 70 ns | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 240W Tc | 78mOhm | 600V | N-Channel | 3000pF @ 300V | 98mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 98 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK20E60W,S1VX | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 165W Tc | N-Channel | 1680pF @ 300V | 155m Ω @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK20N60W,S1VF | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 165W Tc | 130mOhm | N-Channel | 1680pF @ 300V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 155 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK16C60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 2.387001g | 3 | No | 1 | Single | 50 ns | 25ns | 5 ns | 100 ns | 15.8A | 30V | 130W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK6A60W,S4VX | Toshiba Semiconductor and Storage | $1.65 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 390pF | 16 Weeks | Single | 30W | 18ns | 7 ns | 55 ns | 6.2A | 30V | 30W Tc | 600V | N-Channel | 390pF @ 300V | 750m Ω @ 3.1A, 10V | 3.7V @ 310μA | 6.2A Ta | 12nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK13E25D,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 3 | No | FET General Purpose Power | 40ns | 20 ns | 13A | 20V | Single | 250V | 102W Tc | N-Channel | 1100pF @ 100V | 250m Ω @ 6.5A, 10V | 3.5V @ 1mA | 13A Ta | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK8Q60W,S1VQ | Toshiba Semiconductor and Storage | $2.74 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 570pF | 16 Weeks | 500mOhm | 3 | Single | I-PAK | 570pF | 20ns | 5.5 ns | 70 ns | 8A | 30V | 600V | 80W Tc | 420mOhm | N-Channel | 570pF @ 300V | 500mOhm @ 4A, 10V | 3.7V @ 400μA | 8A Ta | 18.5nC @ 10V | Super Junction | 500 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TK10A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.2nF | 25ns | 12 ns | 10A | 20V | 550V | 45W Tc | N-Channel | 1200pF @ 25V | 720mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 24nC @ 10V | 720 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK72E12N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | Single | 255W | 33ns | 37 ns | 120 ns | 72A | 20V | 255W Tc | 120V | N-Channel | 8100pF @ 60V | 4.4m Ω @ 36A, 10V | 4V @ 1mA | 72A Ta | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK13A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.92 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 13A | 30V | 450V | 45W Tc | N-Channel | 1350pF @ 25V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 25nC @ 10V | 460 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK12A53D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 22ns | 15 ns | 12A | 30V | 525V | 45W Tc | N-Channel | 1350pF @ 25V | 580m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK3700(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | 15.9mm | 19mm | 4.8mm | Lead Free | 16 Weeks | 3 | No | Single | 150W | 1 | 30ns | 60 ns | 5A | 30V | 900V | 150W Tc | N-Channel | 1150pF @ 25V | 2.5 Ω @ 3A, 10V | 4V @ 1mA | 5A Ta | 28nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| TK11A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 11A | 30V | 550V | 45W Tc | N-Channel | 1350pF @ 25V | 630mOhm @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 25nC @ 10V | 630 mΩ | 10V | ±30V |
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