| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | ECCN Code | Radiation Hardening | Terminal Position | Terminal Form | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPCP8J01(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | 8-SMD, Flat Lead | 12 Weeks | 8 | Single | 1.06W | 12ns | 90 ns | 22 ns | 32V | 2.14W Ta | -32V | P-Channel | 1760pF @ 10V | 35m Ω @ 3A, 10V | 2V @ 1mA | 5.5A Ta | 34nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TPN2R805PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 45V | 2.67W Ta 104W Tc | N-Channel | 3.2nF @ 22.5V | 2.8m Ω @ 40A, 10V | 2.4V @ 300μA | 139A Ta 80A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPN14006NH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 1nF | 12 Weeks | 13.9mOhm | 8 | EAR99 | Single | 30W | FET General Purpose Power | 9ns | 5.5 ns | 18 ns | 13A | 20V | 700mW Ta 30W Tc | 60V | N-Channel | 1300pF @ 30V | 14m Ω @ 6.5A, 10V | 4V @ 200μA | 13A Ta | 15nC @ 10V | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPC8092,LQ(S | Toshiba Semiconductor and Storage | $0.62 |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 1.8nF | 2.8ns | 8.3 ns | 15A | 20V | 30V | 1W Ta | N-Channel | 1800pF @ 10V | 9mOhm @ 7.5A, 10V | 2.3V @ 200μA | 15A Ta | 25nC @ 10V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPC8132,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 8 | No | DUAL | GULL WING | 1 | 8ns | 46 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1W Ta | 7A | 0.033Ohm | P-Channel | 1580pF @ 10V | 25m Ω @ 3.5A, 10V | 2V @ 200μA | 7A Ta | 34nC @ 10V | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||||||||
| TPH3R003PL,LQ | Toshiba Semiconductor and Storage | $4.24 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8-SOP Advance (5x5) | 30V | 90W Tc | N-Channel | 3825pF @ 15V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300μA | 88A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK50P03M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/toshiba-tk50p03m1t6rssq-datasheets-7168.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DP | 1.7nF | 20ns | 22 ns | 50A | 20V | 30V | 47W Tc | N-Channel | 1700pF @ 10V | 7.5mOhm @ 25A, 10V | 2.3V @ 200μA | 50A Ta | 25.3nC @ 10V | 7.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TPC8066-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 2.1ns | 2.3 ns | 11A | 20V | 30V | 1W Ta | N-Channel | 1100pF @ 10V | 16m Ω @ 5.5A, 10V | 2.3V @ 100μA | 11A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK20P04M1,RQ(S | Toshiba Semiconductor and Storage | $2.16 |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DPAK | 985pF | 2.7ns | 5.1 ns | 20A | 20V | 40V | 27W Tc | N-Channel | 985pF @ 10V | 29mOhm @ 10A, 10V | 2.3V @ 100μA | 20A Ta | 15nC @ 10V | 29 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPH6R003NL,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 850.995985mg | 8 | No | 1 | 8-SOP Advance (5x5) | 1.4nF | 11 ns | 4.1ns | 3.3 ns | 18 ns | 38A | 20V | 30V | 1.6W Ta 34W Tc | 6.8mOhm | 30V | N-Channel | 1400pF @ 15V | 6mOhm @ 19A, 10V | 2.3V @ 200μA | 38A Tc | 17nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| TPN6R303NC,LQ | Toshiba Semiconductor and Storage | $0.21 |
Min: 1 Mult: 1 |
download | U-MOSVIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 1.37nF | 12 Weeks | 6.3mOhm | 8 | Single | 19W | 6ns | 14 ns | 55 ns | 20A | 20V | 700mW Ta 19W Tc | 30V | N-Channel | 1370pF @ 15V | 6.3m Ω @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TJ15P04M3,RQ(S | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | 11ns | 42 ns | 15A | 20V | 40V | 29W Tc | P-Channel | 1100pF @ 10V | 36m Ω @ 7.5A, 10V | 2V @ 100μA | 15A Ta | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPN6R003NL,LQ | Toshiba Semiconductor and Storage | $2.40 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8-TSON Advance (3.3x3.3) | 1.4nF | 11 ns | 4.1ns | 3.3 ns | 18 ns | 27A | 20V | 30V | 700mW Ta 32W Tc | 6.8mOhm | 30V | N-Channel | 1400pF @ 15V | 6mOhm @ 13.5A, 10V | 2.3V @ 200μA | 27A Tc | 17nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| TPC6113(TE85L,F,M) | Toshiba Semiconductor and Storage | $1.74 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | 6ns | 25 ns | 5A | 20V | 700mW Ta | P-Channel | 690pF @ 10V | 55m Ω @ 2.5A, 4.5V | 1.2V @ 200μA | 5A Ta | 10nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| TPC6110(TE85L,F,M) | Toshiba Semiconductor and Storage | $1.69 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | 6ns | 21 ns | 4.5A | 20V | 30V | 700mW Ta | P-Channel | 510pF @ 10V | 56m Ω @ 2.2A, 10V | 2V @ 100μA | 4.5A Ta | 14nC @ 10V | |||||||||||||||||||||||||||||||||||||||
| TPC8125,LQ(S | Toshiba Semiconductor and Storage | $0.62 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 12 Weeks | 8 | No | DUAL | GULL WING | 1.9W | 1 | 16ns | 75 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | P-Channel | 2580pF @ 10V | 13m Ω @ 5A, 10V | 2V @ 500μA | 10A Ta | 64nC @ 10V | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||
| TPC8134,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 8 | No | DUAL | GULL WING | 1 | 8ns | 30 ns | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1W Ta | 5A | 0.066Ohm | P-Channel | 890pF @ 10V | 52m Ω @ 2.5A, 10V | 2V @ 100μA | 5A Ta | 20nC @ 10V | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||||||||
| TK40P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10mm | 2.3mm | 6.1mm | 2 | 12 Weeks | 3 | No | GULL WING | 1 | Single | 47W | 1 | R-PSSO-G2 | 27 ns | 20ns | 18 ns | 63 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 47W Tc | 40V | N-Channel | 1920pF @ 10V | 11m Ω @ 20A, 10V | 2.3V @ 200μA | 40A Ta | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TP89R103NL,LQ | Toshiba Semiconductor and Storage | $0.54 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 850.995985mg | 8 | No | DUAL | GULL WING | 1 | 1 | 8.4 ns | 2.3ns | 2.3 ns | 14 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Tc | 52 pF | 30V | N-Channel | 820pF @ 15V | 9.1m Ω @ 7.5A, 10V | 2.3V @ 100μA | 15A Tc | 9.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| TPC8067-H,LQ(S | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 690pF | 2.1ns | 2.1 ns | 9A | 20V | 30V | 1W Ta | N-Channel | 690pF @ 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100μA | 9A Ta | 9.5nC @ 10V | 25 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPC8129,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8ns | 42 ns | 9A | 20V | 30V | 1W Ta | P-Channel | 1650pF @ 10V | 22m Ω @ 4.5A, 10V | 2V @ 200μA | 9A Ta | 39nC @ 10V | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||
| TPH6R004PL,LQ | Toshiba Semiconductor and Storage | $0.68 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 16 Weeks | 40V | 1.8W Ta 81W Tc | N-Channel | 2700pF @ 20V | 6m Ω @ 24.5A, 10V | 2.4V @ 200μA | 87A Ta 49A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K204FE,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6k204felf-datasheets-6958.pdf | SOT-563, SOT-666 | 12 Weeks | 20V | 500mW Ta | N-Channel | 195pF @ 10V | 126m Ω @ 1A, 4V | 1V @ 1mA | 2A Ta | 3.4nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK6Q65W,S1Q | Toshiba Semiconductor and Storage | $2.62 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-251-3 Stub Leads, IPak | 16 Weeks | I-PAK | 390pF | 5.8A | 650V | 60W Tc | N-Channel | 390pF @ 300V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180μA | 5.8A Ta | 11nC @ 10V | 1.05 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| TPCC8093,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 20V | 1.9W Ta 30W Tc | N-Channel | 1860pF @ 10V | 5.8m Ω @ 10.5A, 4.5V | 1.2V @ 500μA | 21A Ta | 16nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R1E04PL,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 | 12 Weeks | 40V | 87W Tc | N-Channel | 4670pF @ 20V | 3.8m Ω @ 30A, 4.5V | 2.4V @ 500μA | 100A Tc | 63.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.99 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 12A | 30V | 500V | 45W Tc | N-Channel | 1350pF @ 25V | 520mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 25nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TPCA8055-H,LQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 7.7nF | 5.7ns | 11 ns | 56A | 20V | 30V | 1.6W Ta 70W Tc | N-Channel | 7700pF @ 10V | 1.9mOhm @ 28A, 10V | 2.3V @ 1mA | 56A Ta | 91nC @ 10V | 1.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TK6A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $4.08 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 6A | 30V | 500V | 35W Tc | N-Channel | 540pF @ 25V | 1.4Ohm @ 3A, 10V | 4.4V @ 1mA | 6A Ta | 11nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TK7A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.00 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 6.5A | 30V | 450V | 35W Tc | N-Channel | 540pF @ 25V | 1.2Ohm @ 3.3A, 10V | 4.4V @ 1mA | 6.5A Ta | 11nC @ 10V | 1.2 Ω | 10V | ±30V |
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