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Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Package / Case Number of Terminations Factory Lead Time Weight REACH SVHC Number of Pins Radiation Hardening Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Channels Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory JESD-30 Code Supplier Device Package Input Capacitance Turn On Delay Time Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min Threshold Voltage Power Dissipation-Max Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Drain to Source Resistance Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Nominal Vgs Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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