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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Radiation Hardening | Reach Compliance Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPN8R903NL,LQ | Toshiba Semiconductor and Storage | $0.50 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8.3 ns | 2.4ns | 2.1 ns | 14 ns | 20A | 20V | 30V | 700mW Ta 22W Tc | N-Channel | 820pF @ 15V | 8.9m Ω @ 10A, 10V | 2.3V @ 100μA | 20A Tc | 9.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPN1600ANH,L1Q | Toshiba Semiconductor and Storage | $0.83 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 16 Weeks | 8 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 14 ns | 5ns | 6.2 ns | 21 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700mW Ta 42W Tc | 36A | 50 pF | 100V | N-Channel | 1600pF @ 50V | 16m Ω @ 8.5A, 10V | 4V @ 200μA | 17A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| TPN1R603PL,L1Q | Toshiba Semiconductor and Storage | $0.70 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8-TSON Advance (3.3x3.3) | 30V | 104W Tc | N-Channel | 3900pF @ 15V | 1.6mOhm @ 40A, 10V | 2.1V @ 300μA | 80A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPN4R806PL,L1Q | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 60V | 630mW Ta 104W Tc | N-Channel | 2770pF @ 30V | 4.8m Ω @ 36A, 10V | 2.5V @ 300μA | 72A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8026(TE12L,Q,M | Toshiba Semiconductor and Storage | $4.90 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 45W | 1 | 15ns | 36 ns | 45A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 4200pF @ 10V | 2.2m Ω @ 23A, 10V | 2.5V @ 1mA | 45A Ta | 113nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TP86R203NL,LQ | Toshiba Semiconductor and Storage | $3.39 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 850.995985mg | 8 | No | 1 | 8-SOP | 1.4nF | 11 ns | 4ns | 3.5 ns | 20 ns | 19A | 20V | 30V | 1W Tc | 7mOhm | N-Channel | 1400pF @ 15V | 6.2mOhm @ 9A, 10V | 2.3V @ 200μA | 19A Ta | 17nC @ 10V | 6.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TPN13008NH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 1 | 14 ns | 4.5ns | 5 ns | 18 ns | 18A | 20V | 80V | 700mW Ta 42W Tc | N-Channel | 1600pF @ 40V | 13.3m Ω @ 9A, 10V | 4V @ 200μA | 18A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPH4R003NL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 850.995985mg | 8 | 1 | Single | 8-SOP Advance (5x5) | 1.4nF | 10.5 ns | 4.5ns | 3.5 ns | 19 ns | 40A | 20V | 30V | 1.6W Ta 36W Tc | 6.2mOhm | 30V | N-Channel | 1400pF @ 15V | 4mOhm @ 20A, 10V | 2.3V @ 200μA | 40A Tc | 14.8nC @ 10V | 4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPH11006NL,LQ | Toshiba Semiconductor and Storage | $2.27 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 16 Weeks | 850.995985mg | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | S-PDSO-F5 | 11 ns | 4ns | 7.1 ns | 27 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta 34W Tc | 40A | 33 mJ | N-Channel | 2000pF @ 30V | 11.4m Ω @ 8.5A, 10V | 2.5V @ 200μA | 17A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| TPN2R903PL,L1Q | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 30V | 630mW Ta 75W Tc | N-Channel | 2300pF @ 15V | 2.9m Ω @ 35A, 10V | 2.1V @ 200μA | 70A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN4R712MD,L1Q | Toshiba Semiconductor and Storage | $0.64 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | 8-PowerVDFN | 16 Weeks | 8-TSON Advance (3.3x3.3) | 20V | 42W Tc | P-Channel | 4300pF @ 10V | 4.7mOhm @ 18A, 4.5V | 1.2V @ 1mA | 36A Tc | 65nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3R704PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 2.5nF | 92A | 40V | 960mW Ta 81W Tc | N-Channel | 2500pF @ 20V | 3.7mOhm @ 46A, 10V | 2.4V @ 0.2mA | 92A Tc | 27nC @ 10V | 3.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPN11006NL,LQ | Toshiba Semiconductor and Storage | $0.91 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 1 | 11 ns | 4ns | 7.1 ns | 27 ns | 17A | 20V | 700mW Ta 30W Tc | 60V | N-Channel | 2000pF @ 30V | 11.4m Ω @ 8.5A, 10V | 2.5V @ 200μA | 17A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPN22006NH,LQ | Toshiba Semiconductor and Storage | $1.98 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 710pF | 12 Weeks | 8 | Single | 18W | 8-TSON Advance (3.3x3.3) | 710pF | 4.6ns | 3.3 ns | 13 ns | 9A | 20V | 60V | 700mW Ta 18W Tc | 18mOhm | 60V | N-Channel | 710pF @ 30V | 22mOhm @ 4.5A, 10V | 4V @ 100μA | 9A Ta | 12nC @ 10V | 22 mΩ | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SSM3K15ACT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-101, SOT-883 | Lead Free | 52 Weeks | 3 | 100mW | 1 | FET General Purpose Power | 100mA | 20V | Single | 100mW Ta | 30V | N-Channel | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SSM3J331R,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | SOT-23-3 Flat Leads | 16 Weeks | EAR99 | Single | 1W | 4A | 8V | 20V | 1W Ta | -20V | P-Channel | 630pF @ 10V | 55m Ω @ 3A, 4.5V | 1V @ 1mA | 4A Ta | 10.4nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SSM3K324R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-23-3 Flat Leads | 16 Weeks | Single | 4A | 12V | 1W Ta | 30V | N-Channel | 190pF @ 30V | 55m Ω @ 4A, 4.5V | 4A Ta | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-723 | 16 Weeks | 3 | No | 5.5 ns | 8.5 ns | 800mA | 8V | 20V | 150mW Ta | N-Channel | 55pF @ 10V | 235m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SSM3J133TU,LF | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 3-SMD, Flat Lead | 12 Weeks | UFM | 840pF | 5.5A | 20V | 500mW Ta | P-Channel | 840pF @ 10V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 5.5A Ta | 12.8nC @ 4.5V | 29.8 mΩ | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM3J340R,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 1W Ta | P-Channel | 492pF @ 10V | 45m Ω @ 4A, 10V | 2.2V @ 250μA | 4A Ta | 6.2nC @ 4.5V | 4V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J213FE(TE85L,F | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SOT-563, SOT-666 | 290pF | 12 Weeks | 6 | EAR99 | unknown | Single | 500mW | Other Transistors | 2.6A | 8V | 20V | 500mW Ta | -20V | P-Channel | 290pF @ 10V | 103m Ω @ 1.5A, 4.5V | 1V @ 1mA | 2.6A Ta | 4.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SSM6K514NU,LF | Toshiba Semiconductor and Storage | $1.37 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 6-WDFN Exposed Pad | 12 Weeks | unknown | 40V | 2.5W Ta | N-Channel | 1110pF @ 20V | 11.6m Ω @ 4A, 10V | 2.4V @ 100μA | 12A Ta | 7.5nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P16FE(TE85L,F) | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | SOT-563, SOT-666 | 6 | No | 2 | Dual | 150mW | 130 ns | 190 ns | 100mA | 10V | 20V | 150mW Ta | -20V | P-Channel | 11pF @ 3V | 8 Ω @ 10mA, 4V | 100mA Ta | ||||||||||||||||||||||||||||||||||||||||||||
| SSM6J512NU,LF | Toshiba Semiconductor and Storage | $0.13 |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 12 Weeks | 10A | 12V | 1.25W Ta | P-Channel | 1400pF @ 6V | 16.2m Ω @ 4A, 8V | 1V @ 1mA | 10A Ta | 19.5nC @ 4.5V | 1.8V 8V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K131TU,LF | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | 30V | 500mW Ta | N-Channel | 450pF @ 15V | 27.6m Ω @ 4A, 10V | 2.5V @ 1mA | 6A Ta | 10.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K403TU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 12 Weeks | 6 | 500mW | 1 | 4.2A | 10V | 20V | 500mW Ta | N-Channel | 1050pF @ 10V | 28m Ω @ 3A, 4V | 1V @ 1mA | 4.2A Ta | 16.8nC @ 4V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| SSM6J501NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 6-WDFN Exposed Pad | 12 Weeks | EAR99 | unknown | 1W | 10A | 8V | 20V | 1W Ta | -20V | P-Channel | 2600pF @ 10V | 15.3m Ω @ 4A, 4.5V | 1V @ 1mA | 10A Ta | 29.9nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SSM6J414TU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 6 | unknown | Single | 1W | 1 | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 1650pF @ 10V | 22.5m Ω @ 6A, 4.5V | 1V @ 1mA | 6A Ta | 23.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SSM6K781G,LF | Toshiba Semiconductor and Storage | $1.35 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-UFBGA, WLCSP | 1.5mm | 300μm | 1mm | 12 Weeks | 1 | 7A | 4.5V | 1.6W Ta | 12V | N-Channel | 600pF @ 6V | 18m Ω @ 1.5A, 4.5V | 1V @ 250μA | 7A Ta | 5.4nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| TK560P60Y,RQ | Toshiba Semiconductor and Storage | $1.37 |
Min: 1 Mult: 1 |
download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 600V | 60W Tc | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V |
