| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK65E10N1,S1X | Toshiba Semiconductor and Storage | $1.00 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 5.4nF | 12 Weeks | 148A | 100V | 192W Tc | N-Channel | 5400pF @ 50V | 4.8m Ω @ 32.5A, 10V | 4V @ 1mA | 148A Ta | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A80W,S4X | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 800V | 45W Tc | N-Channel | 1400pF @ 300V | 450mOhm @ 5.8A, 10V | 4V @ 570μA | 11.5A Ta | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12E80W,S1X | Toshiba Semiconductor and Storage | $4.79 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 165W Tc | N-Channel | 1400pF @ 300V | 450mOhm @ 5.8A, 10V | 4V @ 570μA | 11.5A Ta | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK17A80W,S4X | Toshiba Semiconductor and Storage | $2.09 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 18.1mm | 16 Weeks | 1 | 45W | 150°C | TO-220SIS | 58 ns | 80 ns | 17A | 20V | 800V | 45W Tc | 250mOhm | 800V | N-Channel | 2050pF @ 300V | 290mOhm @ 8.5A, 10V | 4V @ 850μA | 17A Ta | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK31E60X,S1X | Toshiba Semiconductor and Storage | $6.50 |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 19.95mm | 16 Weeks | 6.000006g | 1 | Single | 230W | 55 ns | 22ns | 6 ns | 130 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 88m Ω @ 9.4A, 10V | 3.5V @ 1.5mA | 30.8A Ta | 65nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK25A60X5,S5X | Toshiba Semiconductor and Storage | $3.47 |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 2.4nF | 25A | 600V | 45W Tc | N-Channel | 2400pF @ 300V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 25A Ta | 60nC @ 10V | 140 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK25N60X,S1F | Toshiba Semiconductor and Storage | $3.70 |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 125m Ω @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK31N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | EAR99 | No | 1 | Single | 120 ns | 80ns | 8.5 ns | 165 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 99m Ω @ 15.4A, 10V | 4.5V @ 1.5mA | 30.8A Ta | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK39N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-247-3 | 16 Weeks | TO-247 | 4.1nF | 38.8A | 600V | 270W Tc | N-Channel | 4100pF @ 300V | 74mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 38.8A Ta | 135nC @ 10V | 74 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK17E80W,S1X | Toshiba Semiconductor and Storage | $3.22 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 180W Tc | N-Channel | 2050pF @ 300V | 290mOhm @ 8.5A, 10V | 4V @ 850μA | 17A Ta | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK39J60W5,S1VQ | Toshiba Semiconductor and Storage | $12.90 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 4.1nF | 16 Weeks | Single | 270W | TO-3P(N) | 4.1nF | 50ns | 9 ns | 200 ns | 38.8A | 30V | 600V | 270W Tc | 55mOhm | 600V | N-Channel | 4100pF @ 300V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 135nC @ 10V | Super Junction | 65 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SSM6J502NU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | yes | 1W | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 1800pF @ 10V | 23.1m Ω @ 4A, 4.5V | 1V @ 1mA | 6A Ta | 24.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| TPH11003NL,LQ | Toshiba Semiconductor and Storage | $2.07 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 850.995985mg | 8 | No | 1 | 8-SOP Advance (5x5) | 660pF | 7.5 ns | 2.1ns | 1.9 ns | 13.5 ns | 32A | 20V | 30V | 1.6W Ta 21W Tc | 12.6mOhm | 30V | N-Channel | 660pF @ 15V | 11mOhm @ 5.5A, 10V | 2.3V @ 100μA | 32A Ta | 7.5nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPN30008NH,LQ | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 710pF | 12 Weeks | 8 | Single | 27W | 3.8ns | 3.6 ns | 14 ns | 9.6A | 20V | 700mW Ta 27W Tc | 80V | N-Channel | 920pF @ 40V | 30m Ω @ 4.8A, 10V | 4V @ 100μA | 9.6A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SSM6J216FE,LF | Toshiba Semiconductor and Storage | $0.42 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | 12V | 700mW Ta | P-Channel | 1040pF @ 12V | 32m Ω @ 3.5A, 4.5V | 1V @ 1mA | 4.8A Ta | 12.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK50P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage | $3.76 |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10mm | 2.3mm | 6.1mm | 16 Weeks | 3 | No | Single | 60W | 1 | DP | 2.6nF | 29 ns | 22ns | 10 ns | 77 ns | 50A | 20V | 40V | 60W Tc | 3.8mOhm | N-Channel | 2600pF @ 10V | 8.7mOhm @ 25A, 10V | 2.3V @ 500μA | 50A Ta | 38nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TPH7R506NH,L1Q | Toshiba Semiconductor and Storage | $1.13 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tph7r506nhl1q-datasheets-0911.pdf | 8-PowerVDFN | 5 | 12 Weeks | 8 | unknown | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta 45W Tc | 55A | 66A | 0.019Ohm | 132 mJ | N-Channel | 2320pF @ 30V | 7.5m Ω @ 11A, 10V | 4V @ 300μA | 22A Ta | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| TK4R4P06PL,RQ | Toshiba Semiconductor and Storage | $1.37 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 60V | 87W Tc | N-Channel | 3280pF @ 30V | 4.4mOhm @ 29A, 10V | 2.5V @ 500μA | 58A Tc | 48.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8P60W5,RVQ | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 8A | 600V | 80W Tc | N-Channel | 590pF @ 300V | 560m Ω @ 4A, 10V | 4.5V @ 400μA | 8A Ta | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH5R906NH,L1Q | Toshiba Semiconductor and Storage | $1.32 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tph5r906nhl1q-datasheets-0970.pdf | 8-PowerVDFN | 12 Weeks | 8 | 28A | 60V | 1.6W Ta 57W Tc | N-Channel | 3100pF @ 30V | 5.9m Ω @ 14A, 10V | 4V @ 300μA | 28A Ta | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK290P65Y,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 650V | 100W Tc | N-Channel | 730pF @ 300V | 290mOhm @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH8R903NL,LQ | Toshiba Semiconductor and Storage | $0.66 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 850.995985mg | 8 | No | 1 | 8.3 ns | 2.4ns | 8.3 ns | 14 ns | 20A | 20V | 1.6W Ta 24W Tc | 30V | N-Channel | 820pF @ 15V | 8.9m Ω @ 10A, 10V | 2.3V @ 1mA | 20A Tc | 9.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPH7R204PL,LQ | Toshiba Semiconductor and Storage | $0.50 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8-SOP Advance (5x5) | 40V | 69W Tc | N-Channel | 2040pF @ 20V | 9.7mOhm @ 15A, 4.5V | 2.4V @ 200μA | 48A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 6-WDFN Exposed Pad | 6 | 12 Weeks | YES | DUAL | NO LEAD | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta | 3.5A | 14A | 0.069Ohm | 9.1 mJ | N-Channel | 430pF @ 15V | 69m Ω @ 2A, 10V | 2.5V @ 100μA | 3.5A Ta | 3.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM3K337R,LF | Toshiba Semiconductor and Storage | $1.17 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 12 Weeks | 2A | 38V | 1W Ta | N-Channel | 120pF @ 10V | 150m Ω @ 2A, 10V | 1.7V @ 1mA | 2A Ta | 3nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K341NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 6-WDFN Exposed Pad | 6 | 12 Weeks | YES | DUAL | NO LEAD | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta | 6A | 24A | 0.036Ohm | 28.9 mJ | N-Channel | 550pF @ 10V | 36m Ω @ 4A, 10V | 2.5V @ 100μA | 6A Ta | 9.3nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM6K513NU,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6k513nulf-datasheets-2129.pdf | 6-WDFN Exposed Pad | 12 Weeks | 6-UDFNB (2x2) | 1.13nF | 15A | 30V | 1.25W Ta | N-Channel | 1130pF @ 15V | 8.9mOhm @ 4A, 10V | 2.1V @ 100μA | 15A Ta | 7.5nC @ 4.5V | 8.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J132TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 3-SMD, Flat Lead | 12 Weeks | unknown | 5.4A | 12V | 500mW Ta | P-Channel | 2700pF @ 10V | 17m Ω @ 5A, 4.5V | 1V @ 1mA | 5.4A Ta | 33nC @ 4.5V | 1.2V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J505NU,LF | Toshiba Semiconductor and Storage | $0.44 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 6 | 12 Weeks | 6 | unknown | DUAL | NO LEAD | Single | 1.25W | 1 | 12A | 6V | SILICON | DRAIN | SWITCHING | 12V | 1.25W Ta | 30A | -12V | P-Channel | 2700pF @ 10V | 12m Ω @ 4A, 4.5V | 1V @ 1mA | 12A Ta | 37.6nC @ 4.5V | 1.2V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
| TPC6111(TE85L,F,M) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | unknown | 2.2W | 1 | 7ns | 30 ns | 5.5A | 8V | 20V | 700mW Ta | P-Channel | 700pF @ 10V | 40m Ω @ 2.8A, 4.5V | 1V @ 1mA | 5.5A Ta | 10nC @ 5V | 1.5V 4.5V | ±8V |
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