| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Height | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM6L11TU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 6 | unknown | 500mW | 2 | Dual | Other Transistors | 16 ns | 15 ns | 500mA | -1.1V | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | N and P-Channel | 268pF @ 10V | 145m Ω @ 250MA, 4V | 1.1V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N48FU,RF(D | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 300mW | GULL WING | 2 | R-PDSO-G6 | 100mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 5.4Ohm | 2 N-Channel (Dual) | 15.1pF @ 3V | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P35FE,LM | Toshiba Semiconductor and Storage | $0.76 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | 150mW | ES6 | 12.2pF | 100mA | 20V | 150mW | 2 P-Channel (Dual) | 12.2pF @ 3V | 8Ohm @ 50mA, 4V | 1V @ 1mA | 100mA | Standard | 8 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN7R504PL,LQ | Toshiba Semiconductor and Storage | $0.51 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 610mW Ta 61W Tc | N-Channel | 2040pF @ 20V | 7.5m Ω @ 19A, 10V | 2.4V @ 200μA | 38A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN11006PL,LQ | Toshiba Semiconductor and Storage | $0.48 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 60V | 610mW Ta 61W Tc | N-Channel | 1625pF @ 30V | 11.4m Ω @ 13A, 10V | 2.5V @ 200μA | 26A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN5R203PL,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 30V | 610mW Ta 61W Tc | N-Channel | 1975pF @ 15V | 5.2m Ω @ 19A, 10V | 2.1V @ 200μA | 38A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN7R006PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 60V | 630mW Ta 75W Tc | N-Channel | 1875pF @ 30V | 7m Ω @ 27A, 10V | 2.5V @ 200μA | 54A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH9R506PL,LQ | Toshiba Semiconductor and Storage | $0.87 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 16 Weeks | 60V | 830mW Ta 81W Tc | N-Channel | 1910pF @ 30V | 9.5m Ω @ 17A, 10V | 2.5V @ 200μA | 34A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ168TE85LF | Toshiba Semiconductor and Storage | $0.02 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 3 | 52 Weeks | EAR99 | 8541.21.00.95 | YES | DUAL | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | SWITCHING | 60V | 60V | 200mW Ta | 0.2A | 2Ohm | 22 pF | P-Channel | 85pF @ 10V | 2 Ω @ 50mA, 10V | 200mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH2R003PL,LQ | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 16 Weeks | 30V | 830mW Ta 116W Tc | N-Channel | 6410pF @ 15V | 2m Ω @ 50A, 10V | 2.1V @ 500μA | 100A Tc | 86nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK110P10PL,RQ | Toshiba Semiconductor and Storage | $0.82 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3R704PC,LQ | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 16 Weeks | 40V | 830mW Ta 90W Tc | N-Channel | 3615pF @ 20V | 3.7m Ω @ 41A, 10V | 2.4V @ 300μA | 82A Tc | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage | $0.90 |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerVDFN | 12 Weeks | EAR99 | 40V | 1.6W Ta 30W Tc | N-Channel | 2110pF @ 10V | 11.3m Ω @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.88 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshiba-tk6a60dsta4qm-datasheets-4391.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | No | SINGLE | 3 | 1 | 20ns | 12 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 40W Tc | 6A | 24A | N-Channel | 800pF @ 25V | 1.25 Ω @ 3A, 10V | 4V @ 1mA | 6A Ta | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK13A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.71 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 50W | 1 | TO-220SIS | 2.3nF | 50ns | 25 ns | 13A | 30V | 600V | 50W Tc | N-Channel | 2300pF @ 25V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 40nC @ 10V | 430 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TK9J90E,S1E | Toshiba Semiconductor and Storage | $2.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 9A | 30V | 900V | 250W Tc | 1Ohm | 900V | N-Channel | 2000pF @ 25V | 1.3Ohm @ 4.5A, 10V | 4V @ 900μA | 9A Ta | 46nC @ 10V | 1.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TK100E10N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 3 | 100A | 100V | 255W Tc | N-Channel | 8800pF @ 50V | 3.4m Ω @ 50A, 10V | 4V @ 1mA | 100A Ta | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH5900CNH,L1Q | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 12 Weeks | 850.995985mg | 8 | yes | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | S-PDSO-F5 | 14 ns | 5.2ns | 4.5 ns | 19 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.6W Ta 42W Tc | 9A | 35A | 0.059Ohm | 36 mJ | 150V | N-Channel | 600pF @ 75V | 59m Ω @ 4.5A, 10V | 4V @ 200μA | 9A Ta | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TPH3R70APL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 100V | 960mW Ta 170W Tc | N-Channel | 6300pF @ 50V | 3.7m Ω @ 45A, 10V | 2.5V @ 1mA | 90A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH6400ENH,L1Q | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | EAR99 | No | 1 | Single | FET General Purpose Power | 14.6 ns | 5.4ns | 5.2 ns | 19 ns | 13A | 20V | 200V | 1.6W Ta 57W Tc | N-Channel | 1100pF @ 100V | 64m Ω @ 6.5A, 10V | 4V @ 300μA | 13A Ta | 11.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 61W | 8-SOP Advance (5x5) | 2.8nF | 7ns | 12 ns | 33 ns | 32A | 20V | 100V | 1.6W Ta 61W Tc | 7.4mOhm | 100V | N-Channel | 2800pF @ 50V | 8.8mOhm @ 16A, 10V | 4V @ 500μA | 32A Tc | 33nC @ 10V | 8.8 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK33S10N1Z,LQ | Toshiba Semiconductor and Storage | $1.27 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | DPAK+ | 2.05nF | 33A | 10V | 100V | 125W Tc | 9.7mOhm | 100V | N-Channel | 2050pF @ 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500μA | 33A Ta | 28nC @ 10V | 9.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPHR8504PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 1mm | 12 Weeks | 8 | Silver, Tin | 1 | 1W | 8-SOP Advance (5x5) | 9.6nF | 26 ns | 13ns | 14 ns | 63 ns | 340A | 20V | 40V | 1.4V | 1W Ta 170W Tc | 700μOhm | 40V | N-Channel | 9600pF @ 20V | 0.85mOhm @ 50A, 10V | 2.4V @ 1mA | 150A Tc | 103nC @ 10V | 850 μΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SSM3J66MFV,L3F | Toshiba Semiconductor and Storage | $0.30 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SOT-723 | 12 Weeks | 20V | 150mW Ta | P-Channel | 100pF @ 10V | 390m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1.6nC @ 4.5V | 1.2V 4.5V | +6V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K56FS,LF | Toshiba Semiconductor and Storage | $0.03 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-75, SOT-416 | 16 Weeks | 3 | unknown | Single | 150mW | 1 | 800mA | 8V | 150mW Ta | 20V | N-Channel | 55pF @ 10V | 235m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J378R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 20V | 1W Ta | P-Channel | 840pF @ 10V | 29.8m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | +6V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K357R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 60V | 1W Ta | N-Channel | 60pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 650mA Ta | 1.5nC @ 5V | 3V 5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage | $1.66 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD (5 Leads), Flat Lead | 5 | No | 1.5A | 8V | 20V | 500mW Ta | P-Channel | 250pF @ 10V | 213m Ω @ 1A, 4V | 1V @ 1mA | 1.5A Ta | 6.4nC @ 4V | Schottky Diode (Isolated) | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J325F,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 270pF | 12 Weeks | Single | 2A | 8V | 20V | 600mW Ta | -20V | P-Channel | 270pF @ 10V | 150m Ω @ 1A, 4.5V | 2A Ta | 4.6nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K211FE,LF | Toshiba Semiconductor and Storage | $0.43 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | ES6 | 510pF | 3.2A | 20V | 500mW Ta | N-Channel | 510pF @ 10V | 47mOhm @ 2A, 4.5V | 1V @ 1mA | 3.2A Ta | 10.8nC @ 4.5V | 47 mΩ | 1.5V 4.5V | ±10V |
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