| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SSM6N17FU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/toshiba-ssm6n17fute85lf-datasheets-0493.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | No SVHC | 6 | EAR99 | Silver, Tin | 200mW | Dual | 200mW | 2 | FET General Purpose Powers | 100 ns | 40 ns | 100mA | 7V | 50V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 200mW Ta | 0.1A | 2 N-Channel (Dual) | 7pF @ 3V | 1.5 V | 20 Ω @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||
| SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | 2 P-Channel (Dual) | 250pF @ 10V | 213m Ω @ 1A, 4V | 1V @ 1mA | 1.5A Ta | 6.4nC @ 4V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N16FUTE85LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | EAR99 | unknown | 200mW | 2 | Dual | FET General Purpose Powers | 70 ns | 125 ns | 100mA | 1.1V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 20V | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SSM6P69NU,LF | Toshiba Semiconductor and Storage | $0.37 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-WDFN Exposed Pad | 12 Weeks | 20V | 1W Ta | 2 P-Channel (Dual) | 480pF @ 10V | 45m Ω @ 3.5A, 10V | 1.2V @ 1mA | 4A Ta | 6.74nC @ 4.5V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L14FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | EAR99 | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.15W | 20V | METAL-OXIDE SEMICONDUCTOR | 150mW Ta | 0.8A | N and P-Channel | 90pF 110pF @ 10V | 240m Ω @ 500mA, 4.5V, 300m Ω @ 400mA, 4.5V | 1V @ 1mA | 800mA Ta 720mA Ta | 2nC, 1.76nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P54TU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | 2 P-Channel (Dual) | 331pF @ 10V | 228m Ω @ 600mA, 2.5V | 1V @ 1mA | 1.2A Ta | 7.7nC @ 4V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N68NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-WDFN Exposed Pad | 12 Weeks | 30V | 2W Ta | 2 N-Channel (Dual) | 129pF @ 15V | 84m Ω @ 2A, 4.5V | 1V @ 1mA | 4A Ta | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002BFE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 1.6mm | 550μm | 1.2mm | 16 Weeks | 150mW | 2 | 200mA | 10V | 60V | 60V | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L35FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 16 Weeks | unknown | 150mW | SSM6L35 | 100mA | 20V | N and P-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA 100mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N357R,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 60V | 1.5W Ta | 2 N-Channel (Dual) | 60pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 650mA Ta | 1.5nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P41FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6P41 | 720mA | 20V | 150mW | 2 P-Channel (Dual) | 110pF @ 10V | 300m Ω @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L36FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | unknown | 150mW | DUAL | FLAT | NOT SPECIFIED | SSM6L36 | NOT SPECIFIED | 2 | R-PDSO-F6 | 330mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | 0.85Ohm | N and P-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA 330mA | 1.23nC @ 4V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SSM6P40TU,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 P-Channel (Dual) | 120pF @ 15V | 226m Ω @ 1A, 10V | 2V @ 1mA | 1.4A Ta | 2.9nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N57NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | unknown | 1W | Dual | 4A | 12V | 30V | 30V | 2 N-Channel (Dual) | 310pF @ 10V | 46m Ω @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N24TU,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 N-Channel (Dual) | 245pF @ 10V | 145m Ω @ 500mA, 4.5V | 1.1V @ 100μA | 500mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P35FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6P35 | 100mA | 20V | 150mW | 2 P-Channel (Dual) | 12.2pF @ 3V | 8 Ω @ 50mA, 4V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 150mW | ES6 | 55pF | 800mA | 20V | 150mW | 2 N-Channel (Dual) | 55pF @ 10V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 800mA | 1nC @ 4.5V | Logic Level Gate, 1.5V Drive | 235 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6N35 | 180mA | 20V | 150mW | 2 N-Channel (Dual) | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35AFE,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 6 | 12 Weeks | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.25A | 2.4Ohm | 10 pF | 2 N-Channel (Dual) | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||
| SSM6P15FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | unknown | 150mW | SSM6P15 | 150mW | 2 | 100mA | 20V | 30V | 2 P-Channel (Dual) | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L61NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Base | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 6 | 12 Weeks | unknown | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.033Ohm | N and P-Channel | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P49NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | unknown | 1W | 1W | 2 | 4A | 12V | 20V | -20V | 2 P-Channel (Dual) | 480pF @ 10V | 45m Ω @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N37FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 20V | 300mW | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 250mA Ta | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm6n7002kfulf-datasheets-7489.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | AEC-Q101 | 285mW | GULL WING | 2 | R-PDSO-G6 | 300mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.3A | 1.75Ohm | 2 N-Channel (Dual) | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||
| SSM6N15AFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | unknown | 300mW | GULL WING | 300mW | 2 | R-PDSO-G6 | 100mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 6Ohm | 30V | 2 N-Channel (Dual) | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002CFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 285mW | 170mA | 60V | 285mW | 2 N-Channel (Dual) | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.35nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N44FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 600μm | 6 | 16 Weeks | 6 | No | SON6-P-0.50 | 150mW | FLAT | SSM6N44 | 2 | Dual | 150mW | 2 | 150°C | 50 ns | 200 ns | 100mA | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 7Ohm | 30V | 2 N-Channel (Dual) | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SSM6L09FUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 300mW | 2 | Dual | Other Transistors | 85 ns | 85 ns | 200mA | -1.8V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | N and P-Channel | 20pF @ 5V | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 400mA 200mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N43FU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 6 | EAR99 | unknown | 200mW | 500mA | 20V | 200mW | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N815R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 100V | 1.8W Ta | 2 N-Channel (Dual) | 290pF @ 15V | 103m Ω @ 2A, 10V | 2.5V @ 100μA | 2A Ta | 3.1nC @ 4.5V | Logic Level Gate, 4V Drive |
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