| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Reference Standard | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| T2N7002AK,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 12 Weeks | 1 | 320mW | 150°C | SOT-23 | 17pF | 2 ns | 7 ns | 200mA | 20V | 60V | 1.1V | 320mW Ta | 2.8Ohm | 60V | N-Channel | 17pF @ 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250μA | 200mA Ta | 0.35nC @ 4.5V | 3.9 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SSM3K72KCT,L3F | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-101, SOT-883 | 12 Weeks | 400mA | 60V | 500mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| T2N7002BK,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-t2n7002bklm-datasheets-2487.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | unknown | 400mA | 60V | 320mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L36TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-SMD, Flat Leads | 6 | 12 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 500mW Ta | 0.5A | 0.85Ohm | N and P-Channel | 46pF 43pF @ 10V | 630m Ω @ 200mA, 5V, 1.31 Ω @ 100mA, 4.5V | 1V @ 1mA | 500mA Ta 330mA Ta | 1.23nC, 1.2nC @ 4V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||
| TPW4R008NH,L1Q | Toshiba Semiconductor and Storage | $4.23 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 25 ns | 8.6ns | 12 ns | 52 ns | 116A | 20V | 80V | 800mW Ta 142W Tc | N-Channel | 5300pF @ 40V | 4m Ω @ 50A, 10V | 4V @ 1mA | 116A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPW4R50ANH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 25 ns | 9.6ns | 13 ns | 52 ns | 92A | 20V | 100V | 800mW Ta 142W Tc | N-Channel | 5200pF @ 50V | 4.5m Ω @ 46A, 10V | 4V @ 1mA | 92A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPH5200FNH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 2.2nF | 26A | 250V | 78W Tc | N-Channel | 2200pF @ 100V | 52mOhm @ 13A, 10V | 4V @ 1mA | 26A Tc | 22nC @ 10V | 52 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPH2900ENH,L1Q | Toshiba Semiconductor and Storage | $2.45 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 20 ns | 8ns | 12 ns | 36 ns | 33A | 20V | 200V | 78W Tc | N-Channel | 2200pF @ 100V | 29m Ω @ 16.5A, 10V | 4V @ 1mA | 33A Ta | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPW1R306PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8 | 260A | 60V | 960mW Ta 170W Tc | N-Channel | 8100pF @ 30V | 1.29m Ω @ 50A, 10V | 2.5V @ 1mA | 260A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | 175°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 1mm | 12 Weeks | 8 | 1 | 960mW | 175°C | 8-SOP Advance (5x5) | 10nF | 36 ns | 100 ns | 150A | 20V | 30V | 1.1V | 960mW Ta 170W Tc | 410μOhm | 30V | N-Channel | 10000pF @ 15V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 650 μΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM3K36MFV,L3F | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-723 | 12 Weeks | 3 | No | 30 ns | 75 ns | 500mA | 10V | 20V | 150mW Ta | N-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | 1.5V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPH2R506PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 60V | 132W Tc | N-Channel | 5435pF @ 30V | 4.4m Ω @ 30A, 4.5V | 2.5V @ 500μA | 100A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J327R,LF | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 3.9A | 20V | 1W Ta | P-Channel | 290pF @ 10V | 93m Ω @ 1.5A, 4.5V | 1V @ 1mA | 3.9A Ta | 4.6nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J372R,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 30V | 1W Ta | P-Channel | 560pF @ 15V | 42m Ω @ 5A, 10V | 1.2V @ 1mA | 6A Ta | 8.2nC @ 4.5V | 1.8V 10V | +12V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J332R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | 3 | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | 150°C | 15 ns | 75 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -500mV | 1W Ta | 6A | 0.042Ohm | -22V | P-Channel | 560pF @ 15V | 42m Ω @ 5A, 10V | 1.2V @ 1mA | 6A Ta | 8.2nC @ 4.5V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||
| SSM3K329R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 9.2 ns | 6.4 ns | 3.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 30V | N-Channel | 123pF @ 15V | 126m Ω @ 1A, 4V | 1V @ 1mA | 3.5A Ta | 1.5nC @ 4V | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||
| SSM3J338R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1W Ta | 6A | 0.0279Ohm | P-Channel | 1400pF @ 6V | 17.6m Ω @ 6A, 8V | 1V @ 1mA | 6A Ta | 19.5nC @ 4.5V | 1.8V 8V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SSM3J356R,LF | Toshiba Semiconductor and Storage | $0.04 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | 1 | R-PDSO-F3 | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1W Ta | 2A | 0.4Ohm | P-Channel | 330pF @ 10V | 300m Ω @ 1A, 10V | 2V @ 1mA | 2A Ta | 8.3nC @ 10V | 4V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||
| SSM3J328R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-3 Flat Leads | 3 | 16 Weeks | 3 | No | DUAL | 1 | Single | 2W | 1 | 32 ns | 107 ns | 6A | 8V | SILICON | SWITCHING | 20V | 1W Ta | 6A | 24A | 0.0298Ohm | -20V | P-Channel | 840pF @ 10V | 29.8m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SSM3J130TU,LF | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 12 Weeks | 3 | No | 25 ns | 133 ns | 4.4A | 8V | 20V | 500mW Ta | P-Channel | 1800pF @ 10V | 25.8m Ω @ 4A, 4.5V | 1V @ 1mA | 4.4A Ta | 24.8nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K361R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | unknown | AEC-Q101 | DUAL | 1 | R-PDSO-F3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 100V | 100V | 1.2W Ta | 14A | 0.069Ohm | 9.1 mJ | N-Channel | 430pF @ 15V | 69m Ω @ 2A, 10V | 2.5V @ 100μA | 3.5A Ta | 3.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM3K2615R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 12 Weeks | 2A | 60V | 1W Ta | N-Channel | 150pF @ 10V | 300m Ω @ 1A, 10V | 2V @ 1mA | 2A Ta | 3.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K341R,LF | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | 1 | R-PDSO-F3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.2W Ta | 6A | 24A | 0.036Ohm | 28.9 mJ | N-Channel | 550pF @ 10V | 36m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 9.3nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 12 Weeks | 10A | 30V | 1.25W Ta | P-Channel | 1150pF @ 15V | 20m Ω @ 4A, 10V | 2.2V @ 250μA | 10A Ta | 20.4nC @ 4.5V | 4V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K344R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 12 Weeks | SOT-23F | 20V | 1W Ta | N-Channel | 153pF @ 10V | 71mOhm @ 3A, 4.5V | 1V @ 1mA | 3A Ta | 2nC @ 4V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K333R,LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 6A | 0.028Ohm | 30V | N-Channel | 436pF @ 15V | 28m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 3.4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SSM6K217FE,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | ES6 | 130pF | 13 ns | 8 ns | 1.8A | 12V | 40V | 500mW Ta | N-Channel | 130pF @ 10V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.8A Ta | 1.1nC @ 4.2V | 195 mΩ | 1.8V 8V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SSM3J358R,LF | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | SOT-23-3 Flat Leads | 12 Weeks | SOT-23F | 20V | 1W Ta | P-Channel | 1331pF @ 10V | 22.1mOhm @ 6A, 8V | 1V @ 1mA | 6A Ta | 38.5nC @ 8V | 1.8V 8V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | EAR99 | YES | Other Transistors | Single | 30V | 500mW Ta | 3.6A | P-Channel | 560pF @ 15V | 50m Ω @ 3A, 10V | 1.2V @ 1mA | 3.6A Ta | 7.9nC @ 4.5V | 1.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6H19NU,LF | Toshiba Semiconductor and Storage | $0.74 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-UDFN Exposed Pad | 2mm | 750μm | 2mm | 12 Weeks | 6 | 1 | 6-UDFN (2x2) | 130pF | 2A | 3.6V | 40V | 1W Ta | 160mOhm | N-Channel | 130pF @ 10V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2A Ta | 2.2nC @ 4.2V | 185 mΩ | 1.8V 8V | ±12V |
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