| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK12J60U(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | 40.5mm | 19mm | 4.8mm | No SVHC | 3 | No | Single | 144W | 1 | 60 ns | 30ns | 8 ns | 75 ns | 12A | 30V | 3V | 144W Tc | 600V | N-Channel | 720pF @ 10V | 400m Ω @ 6A, 10V | 5V @ 1mA | 12A Ta | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| SSM6J503NU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 6-WDFN Exposed Pad | 16 Weeks | 6 | 1W | 1 | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 840pF @ 10V | 32.4m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 10V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SSM6J207FE,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | U-MOSII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | No | 1 | 15 ns | 14 ns | 1.4A | 20V | 30V | 500mW Ta | P-Channel | 137pF @ 15V | 251m Ω @ 650mA, 10V | 2.6V @ 1mA | 1.4A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPN11003NL,LQ | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8-TSON Advance (3.3x3.3) | 660pF | 7.5 ns | 2.1ns | 1.9 ns | 14 ns | 11A | 20V | 30V | 700mW Ta 19W Tc | 12.6mOhm | 30V | N-Channel | 660pF @ 15V | 11mOhm @ 5.5A, 10V | 2.3V @ 100μA | 11A Tc | 7.5nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TPC8048-H(TE12L,Q) | Toshiba Semiconductor and Storage | $6.38 |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 1.9W | 1 | 3.7ns | 7.6 ns | 16A | 20V | 60V | 1W Ta | N-Channel | 7540pF @ 10V | 6.9m Ω @ 8A, 10V | 2.3V @ 1mA | 16A Ta | 87nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPH4R606NH,L1Q | Toshiba Semiconductor and Storage | $1.62 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tph4r606nhl1q-datasheets-7136.pdf | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 3.965nF | 32A | 60V | 1.6W Ta 63W Tc | N-Channel | 3965pF @ 30V | 4.6mOhm @ 16A, 10V | 4V @ 500μA | 32A Ta | 49nC @ 10V | 4.6 mΩ | 6.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SSM3K09FU,LF | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-70, SOT-323 | 3 | 12 Weeks | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 400mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 150mW Ta | 0.4A | 1.7Ohm | N-Channel | 20pF @ 5V | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 400mA Ta | 3.3V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SSM3K336R,LF | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-23-3 Flat Leads | 12 Weeks | unknown | 3A | 30V | 1W Ta | N-Channel | 126pF @ 15V | 95m Ω @ 2A, 10V | 2.5V @ 100μA | 3A Ta | 1.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SSM3J114TU(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 2.1mm | 700μm | 1.7mm | 3 | 1 | Single | Other Transistors | 19 ns | 18 ns | 1.8A | -1V | 20V | 500mW Ta | -20V | P-Channel | 331pF @ 10V | 149m Ω @ 600mA, 4V | 1V @ 1mA | 1.8A Ta | 7.7nC @ 4V | 1.5V 4V | ±8V | ||||||||||||||||||||||||||||||||||||
| SSM3J306T(TE85L,F) | Toshiba Semiconductor and Storage | $2.55 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 11 Weeks | 3 | 1 | Single | Other Transistors | 16 ns | 35 ns | 2.4A | 20V | 30V | 700mW Ta | -30V | P-Channel | 280pF @ 15V | 117m Ω @ 1A, 10V | 2.4A Ta | 2.5nC @ 15V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SSM6J212FE,LF | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | EAR99 | unknown | Single | 500mW | 4A | 8V | 20V | 500mW Ta | -20V | P-Channel | 970pF @ 10V | 40.7m Ω @ 3A, 4.5V | 1V @ 1mA | 4A Ta | 14.1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SSM3K335R,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 16 Weeks | unknown | Single | 1W | 6A | 20V | 1W Ta | 30V | N-Channel | 340pF @ 15V | 38m Ω @ 4A, 10V | 2.5V @ 100μA | 6A Ta | 2.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 12 Weeks | FET General Purpose Power | 10A | Single | 20V | 1W Ta | N-Channel | 710pF @ 10V | 12m Ω @ 7A, 4.5V | 1.2V @ 1mA | 10A Ta | 9.4nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM3J353F,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | S-Mini | 159pF | 2A | 30V | 600mW Ta | P-Channel | 159pF @ 15V | 150mOhm @ 2A, 10V | 2.2V @ 250μA | 2A Ta | 3.4nC @ 4.5V | 150 mΩ | 4V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||
| 2SJ305TE85LF | Toshiba Semiconductor and Storage | $0.02 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshiba-2sj305te85lf-datasheets-8442.pdf | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | 3 | unknown | Other Transistors | 200mA | Single | 30V | 200mW Ta | 0.2A | P-Channel | 92pF @ 3V | 4 Ω @ 50mA, 2.5V | 200mA Ta | 2.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK3564(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.33 |
Min: 1 Mult: 1 |
download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | Copper, Silver, Tin | No | 40W | 1 | TO-220SIS | 700pF | 20ns | 35 ns | 3A | 30V | 900V | 40W Tc | N-Channel | 700pF @ 25V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 17nC @ 10V | 4.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TK040N65Z,S1F | Toshiba Semiconductor and Storage | $9.80 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 16 Weeks | 650V | 360W Tc | N-Channel | 6250pF @ 300V | 40m Ω @ 28.5A, 10V | 4V @ 2.85mA | 57A Ta | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20A60U(Q,M) | Toshiba Semiconductor and Storage | $25.58 |
Min: 1 Mult: 1 |
download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 52 Weeks | 3 | No | Single | 45W | 1 | TO-220SIS | 1.47nF | 40ns | 12 ns | 20A | 30V | 600V | 45W Tc | 190mOhm | 600V | N-Channel | 1470pF @ 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 20A Ta | 27nC @ 10V | 190 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK30A06N1,S4X | Toshiba Semiconductor and Storage | $0.75 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 21 ns | 7.3ns | 7.3 ns | 28 ns | 30A | 20V | 25W Tc | 60V | N-Channel | 1050pF @ 30V | 15m Ω @ 15A, 10V | 4V @ 200μA | 30A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TK560A60Y,S4X | Toshiba Semiconductor and Storage | $0.68 |
Min: 1 Mult: 1 |
download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 600V | 30W | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK290A60Y,S4X | Toshiba Semiconductor and Storage | $0.94 |
Min: 1 Mult: 1 |
download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | 600V | 35W Tc | N-Channel | 730pF @ 300V | 290m Ω @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK7A60W5,S5VX | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 490pF | 7A | 600V | 30W Tc | N-Channel | 490pF @ 300V | 650mOhm @ 3.5A, 10V | 4.5V @ 350μA | 7A Ta | 16nC @ 10V | 650 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK290A65Y,S4X | Toshiba Semiconductor and Storage | $0.84 |
Min: 1 Mult: 1 |
download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | 650V | 35W Tc | N-Channel | 730pF @ 300V | 290m Ω @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK380A60Y,S4X | Toshiba Semiconductor and Storage | $0.81 |
Min: 1 Mult: 1 |
download | DTMOSV | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 600V | 30W | N-Channel | 590pF @ 300V | 380mOhm @ 4.9A, 10V | 4V @ 360μA | 9.7A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK7A90E,S4X | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 1 | Single | TO-220SIS | 1.35nF | 55 ns | 20ns | 15 ns | 85 ns | 7A | 30V | 900V | 45W Tc | 1.6Ohm | N-Channel | 1350pF @ 25V | 2Ohm @ 3.5A, 10V | 4V @ 700μA | 7A Ta | 32nC @ 10V | 2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TK8R2A06PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 12 Weeks | TO-220SIS | 60V | 36W Tc | N-Channel | 1990pF @ 25V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300μA | 50A Tc | 28.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A60W5,S5VX | Toshiba Semiconductor and Storage | $7.24 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 590pF | 8A | 600V | 30W Tc | N-Channel | 590pF @ 300V | 540mOhm @ 4A, 10V | 4.5V @ 400μA | 8A Ta | 22nC @ 10V | 540 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK72A08N1,S4X | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 5.5nF | 42 ns | 19ns | 28 ns | 93 ns | 72A | 20V | 75V | 45W Tc | 3.7mOhm | 80V | N-Channel | 8200pF @ 10V | 4.5mOhm @ 40A, 10V | 4V @ 1mA | 80A Ta | 175nC @ 10V | 4.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||
| TK32E12N1,S1X | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | Single | 98W | 14ns | 14 ns | 43 ns | 60A | 20V | 98W Tc | 120V | N-Channel | 2000pF @ 60V | 13.8m Ω @ 16A, 10V | 4V @ 500μA | 60A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK11A65W,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 890pF | 45 ns | 23ns | 5.5 ns | 85 ns | 11.1A | 30V | 650V | 35W Tc | 330mOhm | 650V | N-Channel | 890pF @ 300V | 390mOhm @ 5.5A, 10V | 3.5V @ 450μA | 11.1A Ta | 25nC @ 10V | 390 mΩ | 10V | ±30V |
Please send RFQ , we will respond immediately.