| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Height | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK3R1P04PL,RQ | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 40V | 87W Tc | N-Channel | 4670pF @ 20V | 3.1m Ω @ 29A, 10V | 2.4V @ 500μA | 58A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8-SOP Advance (5x5) | 20V | 78W Tc | P-Channel | 10900pF @ 10V | 1.7mOhm @ 30A, 4.5V | 1.2V @ 1mA | 60A Tc | 182nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1400ANH,L1Q | Toshiba Semiconductor and Storage | $3.36 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 12 Weeks | 8 | unknown | DUAL | FLAT | Single | 48W | 1 | S-PDSO-F5 | 5.6ns | 6.5 ns | 22 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta 48W Tc | 42A | 91A | 0.0136Ohm | 46 mJ | 100V | N-Channel | 1900pF @ 50V | 13.6m Ω @ 12A, 10V | 4V @ 300μA | 24A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| TK290P60Y,RQ | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.54mm | 16 Weeks | 1 | 100W | 150°C | 65 ns | 170 ns | 11.5A | 30V | 100W Tc | 600V | N-Channel | 730pF @ 300V | 290m Ω @ 5.8A, 10V | 4V @ 450μA | 11.5A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 7.2nF | 150A | 40V | 960mW Ta 132W Tc | N-Channel | 7200pF @ 20V | 1.24mOhm @ 50A, 10V | 2.4V @ 500μA | 150A Tc | 74nC @ 10V | 1.24 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TPH2010FNH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | 1 | 8-SOP Advance (5x5) | 600pF | 14 ns | 5.2ns | 4.5 ns | 19 ns | 5.6A | 20V | 250V | 1.6W Ta 42W Tc | 168mOhm | 250V | N-Channel | 600pF @ 100V | 198mOhm @ 2.8A, 10V | 4V @ 200μA | 5.6A Ta | 7nC @ 10V | 198 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK15S04N1L,LQ | Toshiba Semiconductor and Storage | $5.17 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3.949996g | yes | unknown | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 6ns | 6 ns | 28 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 46W Tc | 30A | 0.037Ohm | 23 mJ | 40V | N-Channel | 610pF @ 10V | 17.8m Ω @ 7.5A, 10V | 2.5V @ 100μA | 15A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| TPN2010FNH,L1Q | Toshiba Semiconductor and Storage | $1.27 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 1 | 8-TSON Advance (3.3x3.3) | 600pF | 14 ns | 5.2ns | 4.5 ns | 19 ns | 5.6A | 20V | 250V | 700mW Ta 39W Tc | 168mOhm | 250V | N-Channel | 600pF @ 100V | 198mOhm @ 2.8A, 10V | 4V @ 200μA | 5.6A Ta | 7nC @ 10V | 198 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK7P60W5,RVQ | Toshiba Semiconductor and Storage | $0.57 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3.949996g | 1 | Single | 60 ns | 40ns | 5 ns | 70 ns | 7A | 30V | 60W Tc | 600V | N-Channel | 490pF @ 300V | 670m Ω @ 3.5A, 10V | 4.5V @ 350μA | 7A Ta | 16nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TPH1110FNH,L1Q | Toshiba Semiconductor and Storage | $1.49 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | No | 1 | Single | 17 ns | 6.5ns | 4.8 ns | 20 ns | 10A | 20V | 1.6W Ta 57W Tc | 250V | N-Channel | 1100pF @ 100V | 112m Ω @ 5A, 10V | 4V @ 300μA | 10A Ta | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK7P65W,RQ | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | yes | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 6.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 60W Tc | 27.2A | 0.8Ohm | 90 mJ | N-Channel | 490pF @ 300V | 800m Ω @ 3.4A, 10V | 3.5V @ 250μA | 6.8A Ta | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK65S04N1L,LQ | Toshiba Semiconductor and Storage | $1.12 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | DPAK+ | 2.55nF | 20 ns | 8ns | 17 ns | 51 ns | 65A | 20V | 40V | 107W Tc | 3.3mOhm | 40V | N-Channel | 2550pF @ 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300μA | 65A Ta | 39nC @ 10V | 4.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||
| TPHR9203PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8-SOP Advance (5x5) | 30V | 132W Tc | N-Channel | 7540pF @ 15V | 2.1V @ 500μA | 150A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK31V60X,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 4-VSFN Exposed Pad | 4 | 16 Weeks | 37.393021mg | SINGLE | NO LEAD | 1 | 1 | S-PSSO-N4 | 55 ns | 22ns | 6 ns | 130 ns | 30.8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 240W Tc | 0.098Ohm | 338 mJ | N-Channel | 3000pF @ 300V | 98m Ω @ 9.4A, 10V | 3.5V @ 1.5mA | 30.8A Ta | 65nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||
| TK15J60U(F) | Toshiba Semiconductor and Storage | $22.13 |
Min: 1 Mult: 1 |
download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | 12 Weeks | 3 | No | Single | 170W | 1 | 37ns | 8 ns | 15A | 30V | 170W Tc | 600V | N-Channel | 950pF @ 10V | 300m Ω @ 7.5A, 10V | 5V @ 1mA | 15A Ta | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TPH14006NH,L1Q | Toshiba Semiconductor and Storage | $2.25 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | 8-PowerVDFN | 12 Weeks | 8 | unknown | 14A | 60V | 1.6W Ta 32W Tc | N-Channel | 1300pF @ 30V | 14m Ω @ 7A, 10V | 4V @ 200μA | 14A Ta | 16nC @ 10V | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPCA8028-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 2.8W | 5ns | 9.8 ns | 50A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 7800pF @ 10V | 2.8m Ω @ 25A, 10V | 2.3V @ 1mA | 50A Ta | 88nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPN2R203NC,L1Q | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
download | U-MOSVIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 16 Weeks | 8 | No | 1 | Single | 8-TSON Advance (3.3x3.3) | 2.23nF | 14 ns | 9ns | 24 ns | 68 ns | 45A | 20V | 30V | 700mW Ta 42W Tc | 1.8mOhm | 30V | N-Channel | 2230pF @ 15V | 2.2mOhm @ 22.5A, 10V | 2.3V @ 500μA | 45A Tc | 34nC @ 10V | 2.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||
| TPN5900CNH,L1Q | Toshiba Semiconductor and Storage | $1.09 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 1 | 14 ns | 5.2ns | 4.5 ns | 19 ns | 9A | 20V | 700mW Ta 39W Tc | 150V | N-Channel | 600pF @ 75V | 59m Ω @ 4.5A, 10V | 4V @ 200μA | 9A Ta | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPW1R005PL,L1Q | Toshiba Semiconductor and Storage | $2.84 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8 | 300A | 45V | 960mW Ta 170W Tc | N-Channel | 9600pF @ 22.5V | 2.4V @ 1mA | 300A Tc | 122nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8045-H(T2L1,VM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 14 Weeks | 8 | yes | 2.8W | 1 | 46A | 20V | 40V | 1.6W Ta 45W Tc | N-Channel | 7540pF @ 10V | 3.6m Ω @ 23A, 10V | 2.3V @ 1mA | 46A Ta | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK10A80W,S4X | Toshiba Semiconductor and Storage | $11.01 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 800V | 40W Tc | N-Channel | 1150pF @ 300V | 550mOhm @ 4.8A, 10V | 4V @ 450μA | 9.5A Ta | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK10P60W,RVQ | Toshiba Semiconductor and Storage | $1.36 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | Single | 80W | DPAK | 700pF | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 600V | 80W Tc | 380mOhm | 600V | N-Channel | 700pF @ 300V | 430mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 430 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||
| TPCA8051-H(T2L1,VM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshiba-tpca8051ht2l1vm-datasheets-6062.pdf | 8-PowerVDFN | 5 | 14 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2.8W | 1 | S-PDSO-F5 | 28A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 1.6W Ta 45W Tc | 255 mJ | N-Channel | 7540pF @ 10V | 9.4m Ω @ 14A, 10V | 2.3V @ 1mA | 28A Ta | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| TPH2R306NH,L1Q | Toshiba Semiconductor and Storage | $1.36 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 9.9ns | 16 ns | 50 ns | 60A | 20V | 60V | 1.6W Ta 78W Tc | N-Channel | 6100pF @ 30V | 2.3m Ω @ 30A, 10V | 4V @ 1mA | 60A Tc | 72nC @ 10V | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPH4R008NH,L1Q | Toshiba Semiconductor and Storage | $2.45 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 86ns | 12 ns | 52 ns | 60A | 20V | 80V | 1.6W Ta 78W Tc | N-Channel | 5300pF @ 40V | 4m Ω @ 30A, 10V | 4V @ 1mA | 60A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK65G10N1,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 3.949996g | 1 | Single | D2PAK | 5.4nF | 44 ns | 19ns | 26 ns | 85 ns | 65A | 20V | 100V | 156W Tc | 3.8mOhm | 100V | N-Channel | 5400pF @ 50V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 65A Ta | 81nC @ 10V | 4.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TPWR8503NL,L1Q | Toshiba Semiconductor and Storage | $1.22 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 150A | 30V | 800mW Ta 142W Tc | N-Channel | 6900pF @ 15V | 0.85m Ω @ 50A, 10V | 2.3V @ 1mA | 150A Tc | 74nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPH4R50ANH,L1Q | Toshiba Semiconductor and Storage | $2.29 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 9.6ns | 13 ns | 52 ns | 60A | 20V | 100V | 1.6W Ta 78W Tc | N-Channel | 5200pF @ 50V | 4.5m Ω @ 30A, 10V | 4V @ 1mA | 60A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPWR8004PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 26 ns | 13ns | 14 ns | 63 ns | 150A | 20V | 40V | 1W Ta 170W Tc | N-Channel | 9600pF @ 20V | 0.8m Ω @ 50A, 10V | 2.4V @ 1mA | 150A Tc | 103nC @ 10V | 4.5V 10V | ±20V |
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