| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Height | Factory Lead Time | Weight | Resistance | Number of Pins | ECCN Code | Radiation Hardening | Reach Compliance Code | Number of Channels | Element Configuration | Power Dissipation | Subcategory | Max Junction Temperature (Tj) | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Configuration | Drain to Source Voltage (Vdss) | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK72E08N1,S1X | Toshiba Semiconductor and Storage | $3.14 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 72A | 80V | 192W Tc | N-Channel | 5500pF @ 40V | 4.3m Ω @ 36A, 10V | 4V @ 1mA | 72A Ta | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK10A60W5,S5VX | Toshiba Semiconductor and Storage | $1.71 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 720pF | 9.7A | 600V | 30W Tc | N-Channel | 720pF @ 300V | 450mOhm @ 4.9A, 10V | 4.5V @ 500μA | 9.7A Ta | 25nC @ 10V | 450 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK100E06N1,S1X | Toshiba Semiconductor and Storage | $2.39 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshiba-tk100e06n1s1x-datasheets-0171.pdf | TO-220-3 | 12 Weeks | 100A | 60V | 255W Tc | N-Channel | 10500pF @ 30V | 2.3m Ω @ 50A, 10V | 4V @ 1mA | 100A Ta | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TK10A80E,S4X | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 18.1mm | 12 Weeks | 6.000006g | 1 | Single | 50W | 150°C | 80 ns | 40ns | 35 ns | 140 ns | 10A | 30V | 50W Tc | 800V | N-Channel | 2000pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| TK110E10PL,S1X | Toshiba Semiconductor and Storage | $1.04 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK650A60F,S4X | Toshiba Semiconductor and Storage | $1.28 |
Min: 1 Mult: 1 |
download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-220-3 Full Pack | 12 Weeks | 600V | 45W Tc | N-Channel | 1320pF @ 300V | 650m Ω @ 5.5A, 10V | 4V @ 1.16mA | 11A Ta | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK7R4A10PL,S4X | Toshiba Semiconductor and Storage | $1.21 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK42A12N1,S4X | Toshiba Semiconductor and Storage | $0.45 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 3.1nF | 40 ns | 18ns | 22 ns | 64 ns | 42A | 20V | 120V | 35W Tc | 7.8mOhm | N-Channel | 3100pF @ 60V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 42A Tc | 52nC @ 10V | 9.4 mΩ | 10V | ±20V | ||||||||||||||||||
| TK5R3A06PL,S4X | Toshiba Semiconductor and Storage | $1.83 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R2E06PL,S1X | Toshiba Semiconductor and Storage | $1.60 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7J90E,S1E | Toshiba Semiconductor and Storage | $2.09 |
Min: 1 Mult: 1 |
download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 1.35nF | 55 ns | 20ns | 15 ns | 85 ns | 7A | 30V | 900V | 200W Tc | 1.6Ohm | 900V | N-Channel | 1350pF @ 25V | 2Ohm @ 3.5A, 10V | 4V @ 700μA | 7A Ta | 32nC @ 10V | 2 Ω | 10V | ±30V | |||||||||||||||||||
| TK3R3A06PL,S4X | Toshiba Semiconductor and Storage | $6.69 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK750A60F,S4X | Toshiba Semiconductor and Storage | $1.11 |
Min: 1 Mult: 1 |
download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | TO-220-3 Full Pack | 12 Weeks | 600V | 40W Tc | N-Channel | 1130pF @ 300V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK6R7A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A50W,S5X | Toshiba Semiconductor and Storage | $1.83 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK380A65Y,S4X | Toshiba Semiconductor and Storage | $1.53 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R9E10PL,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4R1A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R2A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20A60W,S5VX | Toshiba Semiconductor and Storage | $2.81 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 45W Tc | 130mOhm | N-Channel | 1680pF @ 300V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 155 mΩ | 10V | ±30V | ||||||||||||||||||
| TK16N60W,S1VF | Toshiba Semiconductor and Storage | $7.09 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-247-3 | 1.35nF | 16 Weeks | 190mOhm | Single | TO-247 | 1.35nF | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 130W Tc | 160mOhm | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 190 mΩ | 10V | ±30V | ||||||||||||||||||||
| TK16J60W5,S1VQ | Toshiba Semiconductor and Storage | $4.95 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK16E60W5,S1VX | Toshiba Semiconductor and Storage | $4.04 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 16 Weeks | 15.8A | 600V | 130W Tc | N-Channel | 1350pF @ 300V | 230m Ω @ 7.9A, 10V | 4.5V @ 790μA | 15.8A Ta | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TK31Z60X,S1F | Toshiba Semiconductor and Storage | $9.92 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20J60W,S1VE | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K35AMFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | SOT-723 | 12 Weeks | VESM | 20V | 500mW Ta | N-Channel | 36pF @ 10V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||
| 2SK2034TE85LF | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | SC-70, SOT-323 | unknown | FET General Purpose Powers | 100mA | 10V | Single | 100mW Ta | 0.1A | 20V | N-Channel | 8.5pF @ 3V | 12 Ω @ 10mA, 2.5V | 100mA Ta | 2.5V | 10V | ||||||||||||||||||||||||||||||||
| SSM3K72CTC,L3F | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-1123 | 12 Weeks | CST3C | 17pF | 150mA | 60V | 500mW Ta | N-Channel | 17pF @ 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250μA | 150mA Ta | 0.35nC @ 4.5V | 3.9 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SSM3K15AFS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-75, SOT-416 | 16 Weeks | EAR99 | 100mW | 100mA | 20V | 100mW Ta | 30V | N-Channel | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||
| TK040Z65Z,S1F | Toshiba Semiconductor and Storage | $10.27 |
Min: 1 Mult: 1 |
download | DTMOSVI | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-4 | 16 Weeks | 650V | 360W Tc | N-Channel | 6250pF @ 300V | 40m Ω @ 28.5A, 10V | 4V @ 2.85mA | 57A Ta | 105nC @ 10V | 10V | ±30V |
Please send RFQ , we will respond immediately.