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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Radiation Hardening | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK5A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 5A | 30V | 550V | 35W Tc | N-Channel | 540pF @ 25V | 1.7Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TK2A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.22 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 2A | 30V | 650V | 30W Tc | N-Channel | 380pF @ 25V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 2A Ta | 9nC @ 10V | 3.26 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK20G60W,RVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 3.949996g | 3 | No | 1 | Single | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 165W Tc | 600V | N-Channel | 1680pF @ 300V | 155m Ω @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK18E10K3,S1X(S | Toshiba Semiconductor and Storage | $11.74 |
Min: 1 Mult: 1 |
download | U-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 71W | TO-220-3 | 18A | 100V | N-Channel | 42mOhm @ 9A, 10V | 18A Ta | 33nC @ 10V | 42 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| TK6A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.08 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 5.5A | 30V | 550V | 35W Tc | N-Channel | 600pF @ 25V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 5.5A Ta | 12nC @ 10V | 1.48 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK6A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.22 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 6A | 30V | 525V | 35W Tc | N-Channel | 600pF @ 25V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 6A Ta | 12nC @ 10V | 1.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK7A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.23 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | 18ns | 8 ns | 55 ns | 7A | 30V | 35W Tc | 500V | N-Channel | 600pF @ 25V | 1.22 Ω @ 3.5A, 10V | 4.4V @ 1mA | 7A Ta | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| TK5A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.22 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 5A | 30V | 525V | 35W Tc | N-Channel | 540pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK3A65DA(STA4,QM) | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 490pF | 18ns | 8 ns | 2.5A | 30V | 650V | 35W Tc | N-Channel | 490pF @ 25V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 2.5A Ta | 11nC @ 10V | 2.51 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK5A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.43 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 35W | 20ns | 11 ns | 60 ns | 5A | 30V | 35W Tc | 600V | N-Channel | 700pF @ 25V | 1.43 Ω @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK8A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 700pF | 20ns | 11 ns | 8A | 30V | 450V | 35W Tc | N-Channel | 700pF @ 25V | 900mOhm @ 4A, 10V | 4.4V @ 1mA | 8A Ta | 16nC @ 10V | 900 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK8A50DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.10 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | No | 35W | 20ns | 11 ns | 60 ns | 7.5A | 30V | 35W Tc | 500V | N-Channel | 700pF @ 25V | 1.04 Ω @ 3.8A, 10V | 4.4V @ 1mA | 7.5A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TK7A55D(STA4,Q,M) | Toshiba Semiconductor and Storage | $8.27 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 700pF | 20ns | 11 ns | 7A | 30V | 550V | 35W Tc | N-Channel | 700pF @ 25V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 7A Ta | 16nC @ 10V | 1.25 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK160F10N1L,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 175°C | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | AEC-Q101 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 375W Tc | 160A | 480A | 0.0037Ohm | 466 mJ | N-Channel | 10100pF @ 10V | 2.4m Ω @ 80A, 10V | 3.5V @ 1mA | 160A Ta | 122nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| TK3A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.13 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 3A | 30V | 650V | 35W Tc | N-Channel | 540pF @ 25V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 3A Ta | 11nC @ 10V | 2.25 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK5A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 20ns | 12 ns | 5A | 30V | 650V | 40W Tc | N-Channel | 800pF @ 25V | 1.43 Ω @ 2.5A, 10V | 4V @ 1mA | 5A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK35E10K3(S1SS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-3 | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A65DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.71 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 700pF | 20ns | 9 ns | 4.5A | 30V | 650V | 35W Tc | N-Channel | 700pF @ 25V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 4.5A Ta | 16nC @ 10V | 1.67 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK8A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | 7.5A | 450V | N-Channel | 7.5A Tc | ||||||||||||||||||||||||||||||||||||||||||||||
| TK14G65W5,RQ | Toshiba Semiconductor and Storage | $0.65 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK | 1.3nF | 13.7A | 650V | 130W Tc | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TPH4R10ANL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 100V | 2.5W Ta 67W Tc | N-Channel | 6.3nF @ 50V | 4.1m Ω @ 35A, 10V | 2.5V @ 1mA | 92A Ta 70A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TJ40S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $0.62 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 4.14nF | 46ns | 150 ns | 40A | 10V | 40V | 68W Tc | P-Channel | 4140pF @ 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 40A Ta | 83nC @ 10V | 9.1 mΩ | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||
| TPCA8056-H,LQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 6.2nF | 4.7ns | 7.5 ns | 48A | 20V | 30V | 1.6W Ta 63W Tc | N-Channel | 6200pF @ 10V | 2.2mOhm @ 24A, 10V | 2.3V @ 1mA | 48A Ta | 74nC @ 10V | 2.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 43ns | 118 ns | 30A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 68W Tc | 60A | 0.028Ohm | 71 mJ | P-Channel | 3950pF @ 10V | 21.8m Ω @ 15A, 10V | 3V @ 1mA | 30A Ta | 80nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||
| TK46E08N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 80A | 80V | 103W Tc | N-Channel | 2500pF @ 40V | 8.4m Ω @ 23A, 10V | 4V @ 500μA | 80A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK8A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.90 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | No | SINGLE | 1 | 20ns | 12 ns | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | 8A | 0.85Ohm | 165 mJ | N-Channel | 800pF @ 25V | 850m Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| TK65S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 88W | 1 | 11ns | 16 ns | 65A | 20V | 40V | 88W Tc | N-Channel | 2800pF @ 10V | 4.5m Ω @ 32.5A, 10V | 3V @ 1mA | 65A Ta | 63nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TK4A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 24 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 4A | 30V | 500V | 30W Tc | N-Channel | 380pF @ 25V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 9nC @ 10V | 2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK42E12N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 16 Weeks | Single | 140W | 18ns | 22 ns | 64 ns | 88A | 20V | 140W Tc | 120V | N-Channel | 3100pF @ 60V | 9.4m Ω @ 21A, 10V | 4V @ 1mA | 88A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK9P65W,RQ | Toshiba Semiconductor and Storage | $6.39 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 9.3A | 650V | 80W Tc | N-Channel | 700pF @ 300V | 560m Ω @ 4.6A, 10V | 3.5V @ 350μA | 9.3A Ta | 20nC @ 10V | 10V | ±30V |
