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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Factory Lead Time | Weight | Resistance | Number of Pins | Radiation Hardening | Max Power Dissipation | Operating Temperature (Max) | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Configuration | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Power Dissipation-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK8A60DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.54 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 7.5A | 30V | 600V | 45W Tc | N-Channel | 1050pF @ 25V | 1Ohm @ 4A, 10V | 4V @ 1mA | 7.5A Ta | 20nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||
| TK6Q60W,S1VQ | Toshiba Semiconductor and Storage | $1.51 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 390pF | 16 Weeks | 820mOhm | 3 | Single | 18ns | 7 ns | 55 ns | 6.2A | 30V | 600V | 60W Tc | N-Channel | 390pF @ 300V | 820m Ω @ 3.1A, 10V | 3.7V @ 310μA | 6.2A Ta | 12nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||
| TK11A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.92 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 11A | 30V | 450V | 40W Tc | N-Channel | 1050pF @ 25V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 20nC @ 10V | 620 mΩ | 10V | ±30V | |||||||||||||||||||||||||
| TK8Q65W,S1Q | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 16 Weeks | I-PAK | 570pF | 7.8A | 650V | 80W Tc | N-Channel | 570pF @ 300V | 670mOhm @ 3.9A, 10V | 3.5V @ 300μA | 7.8A Ta | 16nC @ 10V | 670 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK12Q60W,S1VQ | Toshiba Semiconductor and Storage | $7.58 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-251-3 Stub Leads, IPak | 890pF | 12 Weeks | 340mOhm | 3 | Single | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 100W Tc | 600V | N-Channel | 890pF @ 300V | 340m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||
| TK10A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.31 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.05nF | 25ns | 10 ns | 75 ns | 10A | 30V | 500V | 45W Tc | 620mOhm | 500V | N-Channel | 1050pF @ 25V | 720mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 20nC @ 10V | 720 mΩ | 10V | ±30V | ||||||||||||||||||||
| TK7A60W,S4VX | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 490pF | 16 Weeks | Single | 30W | TO-220SIS | 490pF | 18ns | 7 ns | 55 ns | 7A | 30V | 600V | 30W Tc | 500mOhm | 600V | N-Channel | 490pF @ 300V | 600mOhm @ 3.5A, 10V | 3.7V @ 350μA | 7A Ta | 15nC @ 10V | Super Junction | 600 mΩ | 10V | ±30V | ||||||||||||||||||||||
| TK40E10K3,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | No | 147W | 147W | 1 | 40A | 100V | N-Channel | 4000pF @ 10V | 15m Ω @ 20A, 10V | 4V @ 1mA | 40A Ta | 84nC @ 10V | ||||||||||||||||||||||||||||||||||||
| TK7Q60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 16 Weeks | 3.949996g | 3 | No | 1 | Single | I-PAK | 490pF | 40 ns | 18ns | 7 ns | 55 ns | 7A | 30V | 600V | 60W Tc | 500mOhm | N-Channel | 490pF @ 300V | 600mOhm @ 3.5A, 10V | 3.7V @ 350μA | 7A Ta | 15nC @ 10V | 600 mΩ | 10V | ±30V | |||||||||||||||||||||
| TK6A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.66 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 6A | 30V | 650V | 45W Tc | N-Channel | 1050pF @ 25V | 1.11Ohm @ 3A, 10V | 4V @ 1mA | 6A Ta | 20nC @ 10V | 1.11 Ω | 10V | ±30V | ||||||||||||||||||||||||||
| TK10A60W,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 52 Weeks | TO-220 | 600V | 30W Tc | N-Channel | 720pF @ 300V | 380mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK5Q60W,S1VQ | Toshiba Semiconductor and Storage | $9.35 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 16 Weeks | 900mOhm | 3 | Single | 18ns | 7 ns | 50 ns | 5.4A | 30V | 600V | 60W Tc | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||
| TK15A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.61 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 50W | 1 | TO-220SIS | 2.3nF | 50ns | 25 ns | 15A | 30V | 500V | 50W Tc | N-Channel | 2300pF @ 25V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||
| TK9A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.2nF | 25ns | 12 ns | 9A | 30V | 600V | 45W Tc | N-Channel | 1200pF @ 25V | 830mOhm @ 4.5A, 10V | 4V @ 1mA | 9A Ta | 24nC @ 10V | 830 mΩ | 10V | ±30V | ||||||||||||||||||||||||||
| TK9A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.20 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 8.5A | 30V | 550V | 40W Tc | N-Channel | 1050pF @ 25V | 860mOhm @ 4.3A, 10V | 4V @ 1mA | 8.5A Ta | 20nC @ 10V | 860 mΩ | 10V | ±30V | ||||||||||||||||||||||||||
| TK11A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 25ns | 12 ns | 11A | 30V | 500V | 45W Tc | N-Channel | 1200pF @ 25V | 600m Ω @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK60E08K3,S1X(S | Toshiba Semiconductor and Storage | $8.06 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 12 Weeks | 60A | 75V | 128W | N-Channel | 9m Ω @ 30A, 10V | 75nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| TK9A65W,S5X | Toshiba Semiconductor and Storage | $3.05 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 700pF | 9.3A | 650V | 30W Tc | N-Channel | 700pF @ 300V | 500mOhm @ 4.6A, 10V | 3.5V @ 350μA | 9.3A Ta | 20nC @ 10V | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK12A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 25ns | 12 ns | 12A | 30V | 450V | 45W Tc | N-Channel | 1200pF @ 25V | 520m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK7A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.81 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.2nF | 25ns | 12 ns | 7A | 30V | 650V | 45W Tc | N-Channel | 1200pF @ 25V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 7A Ta | 24nC @ 10V | 980 mΩ | 10V | ±30V | ||||||||||||||||||||||||
| TPC8109(TE12L) | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8109te12l-datasheets-5015.pdf | -30V | -10A | 8-SOIC (0.173, 4.40mm Width) | Contains Lead | 8 | 150°C | Other Transistors | 5ns | 10A | Single | 1.9W | 30V | P-Channel | 2260pF @ 10V | 20m Ω @ 5A, 10V | 2V @ 1mA | 10A Ta | 45nC @ 10V | |||||||||||||||||||||||||||||||
| 2SJ377(TE16R1,NQ) | Toshiba Semiconductor and Storage | $9.33 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj377te16r1nq-datasheets-7576.pdf | -60V | -5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | No | 20W | 1 | PW-MOLD | 630pF | 25ns | 5A | 60V | 20W Tc | P-Channel | 630pF @ 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 5A Ta | 22nC @ 10V | 190 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||
| TPCF8104(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 2.5W | 2.8ns | 22 ns | 6A | 20V | 30V | 700mW Ta | -30V | P-Channel | 1760pF @ 10V | 28m Ω @ 3A, 10V | 2V @ 1mA | 6A Ta | 34nC @ 10V | |||||||||||||||||||||||||||||||||
| TPCF8B01(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcf8b01te85lfm-datasheets-8247.pdf | 8-SMD, Flat Lead | 20V | 330mW Ta | P-Channel | 470pF @ 10V | 110m Ω @ 1.4A, 4.5V | 1.2V @ 200μA | 2.7A Ta | 6nC @ 5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| TPCF8A01(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcf8a01te85l-datasheets-8252.pdf | 20V | 3A | 8-SMD, Flat Lead | Contains Lead | 8 | No | 3ns | 4.4 ns | 3A | 12V | 330mW Ta | N-Channel | 590pF @ 10V | 49m Ω @ 1.5A, 4.5V | 1.2V @ 200μA | 3A Ta | 7.5nC @ 5V | Schottky Diode (Isolated) | 2V 4.5V | ±12V | |||||||||||||||||||||||||||||
| TPCF8101(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | VS-8 (2.9x1.5) | 1.6nF | 7ns | 21 ns | 6A | 8V | 12V | 700mW Ta | P-Channel | 1600pF @ 10V | 28mOhm @ 3A, 4.5V | 1.2V @ 200μA | 6A Ta | 18nC @ 5V | 28 mΩ | ||||||||||||||||||||||||||||||
| TPCA8065-H,LQ(S | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 1.6nF | 2.2ns | 2.3 ns | 16A | 30V | 30V | 1.6W Ta 25W Tc | N-Channel | 1600pF @ 10V | 11.4mOhm @ 8A, 10V | 2.3V @ 200μA | 16A Ta | 20nC @ 10V | 11.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| TPC8062-H,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 12 Weeks | 8 | No | 8-SOP | 2.9nF | 3ns | 9.7 ns | 18A | 20V | 30V | 1W Ta | N-Channel | 2900pF @ 10V | 5.8mOhm @ 9A, 10V | 2.3V @ 300μA | 18A Ta | 34nC @ 10V | 5.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| TK11P65W,RQ | Toshiba Semiconductor and Storage | $1.18 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 890pF | 11.1A | 650V | 100W Tc | N-Channel | 890pF @ 300V | 440mOhm @ 5.5A, 10V | 3.5V @ 450μA | 11.1A Ta | 25nC @ 10V | 440 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TPCA8120,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 7.42nF | 10ns | 262 ns | 45A | 20V | 30V | 1.6W Ta 45W Tc | P-Channel | 7420pF @ 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 45A Ta | 190nC @ 10V | 3 mΩ | 4.5V 10V | +20V, -25V |
