Products
Manufacturer
RFQ
NEWS
ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lead Pitch | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Power Dissipation | Terminal Position | Terminal Form | Pin Count | Element Configuration | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SJ610(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj610te16l1nq-datasheets-3598.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | No | PW-MOLD | 381pF | 5ns | 6 ns | 2A | 20V | 250V | 20W Ta | P-Channel | 381pF @ 10V | 2.55Ohm @ 1A, 10V | 3.5V @ 1mA | 2A Ta | 24nC @ 10V | 2.55 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SJ681(Q) | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj681q-datasheets-3602.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 20W | 1 | 5A | 20V | 60V | 20W Ta | P-Channel | 700pF @ 10V | 170m Ω @ 2.5A, 10V | 2V @ 1mA | 5A Ta | 15nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3313(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3313q-datasheets-3604.pdf | TO-220-3 Full Pack | Lead Free | 620mOhm | Single | 40W | TO-220NIS | 2.04nF | 12A | 30V | 500V | 40W Tc | 500mOhm | 500V | N-Channel | 2040pF @ 10V | 620mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 45nC @ 10V | 620 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| 2SK2744(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | 3 | No | 30ns | 80 ns | 45A | 20V | 50V | 125W Tc | N-Channel | 2300pF @ 10V | 20m Ω @ 25A, 10V | 3.5V @ 1mA | 45A Ta | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ360(TE12L,F) | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj360te12lf-datasheets-3608.pdf | TO-243AA | 3 | 12 Weeks | 4 | EAR99 | No | SINGLE | FLAT | 3 | 1.5W | 1 | Other Transistors | R-PSSO-F3 | 17ns | 20 ns | 1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 500mW Ta | 1A | P-Channel | 155pF @ 10V | 730m Ω @ 500mA, 10V | 2V @ 1mA | 1A Ta | 6.5nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||
| 2SK2507(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2507f-datasheets-3619.pdf | TO-220-3 Full Pack | Lead Free | 3 | No | Single | 30W | 1 | TO-220NIS | 900pF | 25 ns | 15ns | 30 ns | 110 ns | 25A | 20V | 50V | 30W Tc | 46mOhm | 50V | N-Channel | 900pF @ 10V | 46mOhm @ 12A, 10V | 2V @ 1mA | 25A Ta | 25nC @ 10V | 46 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2SK1119(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 10.3mm | 9mm | 4.7mm | Lead Free | 3 | 2.54mm | No | 100W | 1 | 4A | 20V | 1kV | 1000V | 3.5V | 100W Tc | N-Channel | 700pF @ 25V | 3.5 V | 3.8 Ω @ 2A, 10V | 3.5V @ 1mA | 4A Ta | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2SJ380(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj380f-datasheets-3625.pdf | TO-220-3 Full Pack | Lead Free | 3 | 35W | 1 | 2kV | 12A | 20V | -100V | 100V | -2V | 35W Tc | P-Channel | 1100pF @ 10V | -2 V | 210m Ω @ 6A, 10V | 2V @ 1mA | 12A Ta | 48nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK3342(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3342te16l1nq-datasheets-3628.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 4.5A | 250V | 20W Tc | N-Channel | 440pF @ 10V | 1 Ω @ 2.5A, 10V | 3.5V @ 1mA | 4.5A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ304(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj304f-datasheets-3630.pdf | TO-220-3 Full Pack | Lead Free | 120mOhm | Single | 40W | TO-220NIS | 1.2nF | 20ns | 25 ns | 14A | 20V | 60V | 40W Tc | 120mOhm | -60V | P-Channel | 1200pF @ 10V | 120mOhm @ 7A, 10V | 2V @ 1mA | 14A Ta | 45nC @ 10V | 120 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2SK2845(TE16L1,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2845te16l1q-datasheets-3633.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | unknown | Single | 40W | 1 | 20ns | 30 ns | 1A | 30V | 40W Tc | 900V | N-Channel | 350pF @ 25V | 9 Ω @ 500mA, 10V | 4V @ 1mA | 1A Ta | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK2883(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2883te24lq-datasheets-3636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3.6Ohm | Single | 75W | 51ns | 56 ns | 81 ns | 3A | 30V | 75W Tc | 800V | N-Channel | 750pF @ 25V | 3.6 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ360(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj360te12lf-datasheets-3608.pdf | TO-243AA | Lead Free | 3 | 4 | No | FLAT | Single | 1.5W | 1 | R-PSSO-F3 | 17ns | 20 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 60V | 500mW Ta | 1A | -60V | P-Channel | 155pF @ 10V | 730m Ω @ 500mA, 10V | 2V @ 1mA | 1A Ta | 6.5nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TPCA8A02-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 3.6ns | 7.7 ns | 34A | 20V | 30V | 1.6W Ta 45W Tc | N-Channel | 3430pF @ 10V | 5.3m Ω @ 17A, 10V | 2.3V @ 1mA | 34A Ta | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2866(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2866f-datasheets-3643.pdf | TO-220-3 | Lead Free | 3 | No | Single | 125W | 1 | 22ns | 36 ns | 10A | 30V | 125W Tc | 600V | N-Channel | 2040pF @ 10V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| 2SK3906(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3906q-datasheets-3645.pdf | TO-3P-3, SC-65-3 | 15.9mm | 19mm | 4.8mm | Lead Free | Unknown | 3 | No | Single | 150W | 1 | 12ns | 10 ns | 20A | 30V | 600V | 4V | 150W Tc | 600V | N-Channel | 4250pF @ 25V | 4 V | 330m Ω @ 10A, 10V | 4V @ 1mA | 20A Ta | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| 2SK2544(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2544f-datasheets-3648.pdf | TO-220-3 | Lead Free | No | Single | 80W | 1 | TO-220AB | 1.3nF | 25ns | 40 ns | 6A | 30V | 600V | 80W Tc | 1.25Ohm | 600V | N-Channel | 1300pF @ 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | 6A Ta | 30nC @ 10V | 1.25 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TPC8026(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8026te12lqm-datasheets-3652.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 1.9W | 8-SOP (5.5x6.0) | 1.8nF | 15ns | 21 ns | 13A | 20V | 30V | 1W Ta | 6.6mOhm | 30V | N-Channel | 1800pF @ 10V | 6.6mOhm @ 6.5A, 10V | 2.5V @ 1mA | 13A Ta | 42nC @ 10V | 6.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPC8036-H(TE12L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 4.6nF | 4.5ns | 7.4 ns | 18A | 20V | 30V | 1W Ta | N-Channel | 4600pF @ 10V | 4.5mOhm @ 9A, 10V | 2.3V @ 1mA | 18A Ta | 49nC @ 10V | 4.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TPCA8025(TE12L,Q,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 12ns | 23 ns | 40A | 20V | 30V | 1.6W Ta 45W Tc | N-Channel | 2200pF @ 10V | 3.5m Ω @ 20A, 10V | 2.5V @ 1mA | 40A Ta | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4016(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk4016q-datasheets-3662.pdf | TO-220-3 Full Pack | 10mm | 8.1mm | 4.5mm | Lead Free | 3 | No | Single | 50W | 1 | 60ns | 50 ns | 13A | 30V | 600V | 50W Tc | 600V | N-Channel | 3100pF @ 25V | 4 V | 500m Ω @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| 2SK3662(F) | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | U-MOSIII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | Lead Free | 3 | TO-220NIS | 5.12nF | 35A | 60V | 35W Tc | N-Channel | 5120pF @ 10V | 12.5mOhm @ 18A, 10V | 2.5V @ 1mA | 35A Ta | 91nC @ 10V | 12.5 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8036-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | 38A | 30V | 1.6W Ta 45W Tc | N-Channel | 4600pF @ 10V | 4.2m Ω @ 19A, 10V | 2.3V @ 500μA | 38A Ta | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8042(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 2.9nF | 18ns | 25 ns | 18A | 20V | 30V | 1W Ta | N-Channel | 2900pF @ 10V | 3.4mOhm @ 9A, 10V | 2.5V @ 1mA | 18A Ta | 56nC @ 10V | 3.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TPC8051-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 3.4ns | 6.7 ns | 13A | 20V | 80V | 1W Ta | N-Channel | 7540pF @ 10V | 9.7m Ω @ 6.5A, 10V | 2.3V @ 1mA | 13A Ta | 85nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8003-H(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 2.9mm | 800μm | 2.4mm | Lead Free | 8 | EAR99 | No | Single | 1.68W | FET General Purpose Power | 7ns | 3 ns | 2.2A | 20V | 840mW Ta | 100V | N-Channel | 360pF @ 10V | 180m Ω @ 1.1A, 10V | 2.3V @ 1mA | 2.2A Ta | 7.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPCA8A04-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 45W | FET General Purpose Power | 4.9ns | 8.3 ns | 44A | 20V | Single | 30V | N-Channel | 5700pF @ 10V | 3.2m Ω @ 22A, 10V | 2.3V @ 1mA | 44A Ta | 59nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPCP8005-H(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | EAR99 | No | 1.68W | FET General Purpose Power | 3ns | 4 ns | 11A | 20V | Single | 840mW Ta | 30V | N-Channel | 2150pF @ 10V | 12.9m Ω @ 5.5A, 10V | 2.5V @ 1mA | 11A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK3462(TE16L1,NQ) | Toshiba Semiconductor and Storage | $3.80 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3462te16l1nq-datasheets-3690.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | PW-MOLD | 267pF | 3A | 250V | 20W Tc | N-Channel | 267pF @ 10V | 1.7Ohm @ 1.5A, 10V | 3.5V @ 1mA | 3A Ta | 12nC @ 10V | 1.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4017(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 52 Weeks | No SVHC | 3 | Silver, Tin | No | Single | 20W | 1 | 10ns | 4 ns | 5A | 20V | 60V | 2.5V | 20W Tc | N-Channel | 730pF @ 10V | 2.5 V | 100m Ω @ 2.5A, 10V | 2.5V @ 1mA | 5A Ta | 15nC @ 10V | 4V 10V | ±20V |
