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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Factory Lead Time | Number of Pins | Radiation Hardening | Reach Compliance Code | Max Power Dissipation | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Configuration | Drain to Source Voltage (Vdss) | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPC6109-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII-H | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 30V | 700mW Ta | P-Channel | 490pF @ 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200μA | 5A Ta | 12.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK15A60U(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.60 |
Min: 1 Mult: 1 |
download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | 40W | 1 | TO-220SIS | 950pF | 37ns | 8 ns | 15A | 30V | 600V | 40W Tc | N-Channel | 950pF @ 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 15A Ta | 17nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||
| SSM3J129TU(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 2.1mm | 700μm | 1.7mm | 3 | No | Single | 32 ns | 102 ns | 4.6A | 8V | 20V | 500mW Ta | P-Channel | 640pF @ 10V | 46m Ω @ 3A, 4.5V | 1V @ 1mA | 4.6A Ta | 8.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||
| SSM3J120TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 4A | 20V | 500mW Ta | P-Channel | 1484pF @ 10V | 38m Ω @ 3A, 4V | 1V @ 1mA | 4A Ta | 22.3nC @ 4V | 1.5V 4V | ±8V | ||||||||||||||||||||||||||||||||||
| SSM3J321T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | No | 5.2A | 8V | 20V | 700mW Ta | P-Channel | 640pF @ 10V | 46m Ω @ 3A, 4.5V | 1V @ 1mA | 5.2A Ta | 8.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD, Flat Leads | 6 | No | Other Transistors | 9.5A | 8V | Single | 20V | 1W Ta | P-Channel | 1100pF @ 10V | 22.1m Ω @ 3A, 4.5V | 1V @ 1mA | 9.5A Ta | 15nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SSM4K27CTTPL3 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 4-SMD, No Lead | 4 | unknown | 1 | Single | 400mW | FET General Purpose Power | 10 ns | 12 ns | 500mA | 12V | 400mW Ta | 0.5A | 20V | N-Channel | 174pF @ 10V | 205m Ω @ 250mA, 4V | 1.1V @ 1mA | 500mA Ta | 1.8V 4V | ±12V | ||||||||||||||||||||||||
| SSM6J51TUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD, Flat Leads | 12V | 500mW Ta | P-Channel | 1700pF @ 10V | 54m Ω @ 2A, 2.5V | 1V @ 1mA | 4A Ta | ||||||||||||||||||||||||||||||||||||||||
| SSM3K7002BSU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k7002bsulf-datasheets-4802.pdf | SC-70, SOT-323 | USM | 17pF | 200mA | 60V | 150mW Ta | N-Channel | 17pF @ 25V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250μA | 200mA Ta | 2.1 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6j53fete85lf-datasheets-4832.pdf | SOT-563, SOT-666 | unknown | 500mW | 1.8A | 8V | 500mW Ta | 20V | P-Channel | 568pF @ 10V | 136m Ω @ 1A, 2.5V | 1V @ 1mA | 1.8A Ta | 10.6nC @ 4V | 1.5V 2.5V | ±8V | ||||||||||||||||||||||||||||||||
| SSM5H12TU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD (5 Leads), Flat Lead | unknown | 1.9A | 30V | 500mW Ta | N-Channel | 123pF @ 15V | 133m Ω @ 1A, 4V | 1V @ 1mA | 1.9A Ta | 1.9nC @ 4V | Schottky Diode (Isolated) | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||
| SSM3K316T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k316tte85lf-datasheets-4842.pdf | TO-236-3, SC-59, SOT-23-3 | FET General Purpose Power | 4A | Single | 30V | 700mW Ta | 4A | N-Channel | 270pF @ 10V | 53m Ω @ 3A, 10V | 1V @ 1mA | 4A Ta | 4.3nC @ 4V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||
| SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | FET General Purpose Power | 6A | Single | 30V | 700mW Ta | 6A | N-Channel | 450pF @ 15V | 27.6m Ω @ 4A, 10V | 2.5V @ 1mA | 6A Ta | 10.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SSM3K106TU(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 3 | No | Single | 800mW | 1.2A | 20V | 500mW Ta | 20V | N-Channel | 36pF @ 10V | 310m Ω @ 600mA, 10V | 2.3V @ 100μA | 1.2A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||
| SSM3K15FS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SC-75, SOT-416 | 100mA | 30V | 200mW Ta | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||
| TPCC8001-H(TE12LQM | Toshiba Semiconductor and Storage | $0.09 |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8001hte12lqm-datasheets-5272.pdf | 8-PowerVDFN | 8 | No | 2.8ns | 5.9 ns | 22A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2500pF @ 10V | 8.3m Ω @ 11A, 10V | 2.5V @ 1mA | 22A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SSM3K303T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | No | Single | 700mW | 2.9A | 20V | 700mW Ta | 30V | N-Channel | 180pF @ 10V | 83m Ω @ 1.5A, 10V | 2.6V @ 1mA | 2.9A Ta | 3.3nC @ 4V | 4V 10V | ±20V | |||||||||||||||||||||||||||||
| TPCC8002-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8002hte12lq-datasheets-6257.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 2.5nF | 2.8ns | 5.9 ns | 22A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2500pF @ 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 22A Ta | 27nC @ 10V | 8.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TPCC8003-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8003hte12lqm-datasheets-5329.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 1.3nF | 2.2ns | 2.7 ns | 13A | 20V | 30V | 700mW Ta 22W Tc | N-Channel | 1300pF @ 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200μA | 13A Ta | 17nC @ 10V | 16.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TPCC8005-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8005hte12lqm-datasheets-5324.pdf | 8-PowerVDFN | 8 | No | 4.5ns | 9.8 ns | 26A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2900pF @ 10V | 6.4m Ω @ 13A, 10V | 2.3V @ 500μA | 26A Ta | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| TPCC8A01-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 1.9nF | 2.2ns | 3.4 ns | 21A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 1900pF @ 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 21A Ta | 20nC @ 10V | 9.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SSM3J108TU(TE85L) | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | Lead Free | 3 | No | Single | 800mW | 1 | 1.8A | 8V | 20V | 500mW Ta | -20V | P-Channel | 250pF @ 10V | 158m Ω @ 800mA, 4V | 1V @ 1mA | 1.8A Ta | 1.8V 4V | ±8V | ||||||||||||||||||||||||||
| TPCP8004(TE85L,F) | Toshiba Semiconductor and Storage | $1.18 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 12ns | 9 ns | 8.3A | 20V | 30V | 840mW Ta | N-Channel | 1270pF @ 10V | 8.5m Ω @ 4.2A, 10V | 2.5V @ 1mA | 8.3A Ta | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| TPCC8006-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8006hte12lqm-datasheets-5352.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 2.2nF | 3.8ns | 9.7 ns | 22A | 20V | 30V | 700mW Ta 27W Tc | N-Channel | 2200pF @ 10V | 8mOhm @ 11A, 10V | 2.3V @ 200μA | 22A Ta | 27nC @ 10V | 8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TPCP8103-H(TE85LFM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 6.5 ns | 9 ns | 4.8A | 20V | 40V | 840mW Ta | P-Channel | 800pF @ 10V | 40m Ω @ 2.4A, 10V | 2V @ 1mA | 4.8A Ta | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| TPCC8103(TE12L,QM) | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 9.3ns | 68 ns | 18A | 20V | 30V | 700mW Ta 27W Tc | P-Channel | 1600pF @ 10V | 12m Ω @ 9A, 10V | 2V @ 1mA | 18A Ta | 38nC @ 10V | |||||||||||||||||||||||||||||||
| SSM3J307T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 700μm | 1.6mm | 3 | No | Single | 35 ns | 160 ns | 5A | 8V | 20V | 700mW Ta | P-Channel | 1170pF @ 10V | 31m Ω @ 4A, 4.5V | 1V @ 1mA | 5A Ta | 19nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||
| TK40P03M1(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 33W | DP | 1.15nF | 15ns | 14 ns | 40A | 20V | 30V | N-Channel | 1150pF @ 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100μA | 40A Ta | 17.5nC @ 10V | 10.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||
| TK13A65U(STA4,Q,M) | Toshiba Semiconductor and Storage | $4.24 |
Min: 1 Mult: 1 |
download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | 40W | 1 | TO-220SIS | 950pF | 30ns | 8 ns | 13A | 30V | 650V | 40W Tc | N-Channel | 950pF @ 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 13A Ta | 17nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||
| SSM3K35MFV(TPL3) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-723 | 1.2mm | 500μm | 800μm | 11 Weeks | 3 | No | Single | 150mW | 180mA | 10V | 150mW Ta | 20V | N-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA Ta | 1.2V 4V | ±10V |
