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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | ECCN Code | Radiation Hardening | Reach Compliance Code | Max Power Dissipation | Terminal Position | Terminal Form | Power Dissipation | Number of Elements | JESD-30 Code | Supplier Device Package | Input Capacitance | Rise Time | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain-source On Resistance-Max | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPCA8052-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | unknown | 20A | 40V | 1.6W Ta 30W Tc | N-Channel | 2110pF @ 10V | 11.3m Ω @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 25nC @ 10V | |||||||||||||||||||||||||||||||||||
| TK40P03M1(T6RDS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 33W | DPAK | 1.15nF | 15ns | 14 ns | 40A | 20V | 30V | N-Channel | 1150pF @ 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100μA | 40A Ta | 17.5nC @ 10V | 10.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TK4A60DB(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 18ns | 8 ns | 3.7A | 30V | 600V | 35W Tc | N-Channel | 540pF @ 25V | 2 Ω @ 1.9A, 10V | 4.4V @ 1mA | 3.7A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| TK4A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.90 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 3.5A | 30V | 550V | 30W Tc | N-Channel | 380pF @ 25V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 9nC @ 10V | 2.45 Ω | 10V | ±30V | ||||||||||||||||||||||
| TK45P03M1,RQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 39W | DPAK | 1.5nF | 4.2ns | 9.4 ns | 45A | 20V | 30V | N-Channel | 1500pF @ 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200μA | 45A Ta | 25nC @ 10V | 9.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TK4A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 24 Weeks | No | TO-220SIS | 490pF | 18ns | 8 ns | 4A | 30V | 550V | 35W Tc | N-Channel | 490pF @ 25V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 11nC @ 10V | 1.88 Ω | 10V | ±30V | ||||||||||||||||||||||||
| TK4A53D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 24 Weeks | 3 | No | TO-220SIS | 490pF | 18ns | 8 ns | 4A | 30V | 525V | 35W Tc | N-Channel | 490pF @ 25V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 11nC @ 10V | 1.7 Ω | 10V | ±30V | |||||||||||||||||||||||
| TK20A25D,S5Q(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | TO-220SIS | 250V | 45W Tc | N-Channel | 2550pF @ 100V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK4P50D(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | No | 80W | 1 | 15ns | 7 ns | 4A | 30V | 500V | 80W Tc | N-Channel | 380pF @ 25V | 2 Ω @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| TK4P55D(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | D-Pak | 490pF | 18ns | 8 ns | 4A | 30V | 550V | 80W Tc | N-Channel | 490pF @ 25V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 11nC @ 10V | 1.88 Ω | 10V | ±30V | ||||||||||||||||||||||||
| TPC8126,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 12 Weeks | 8 | No | 8-SOP (5.5x6.0) | 2.4nF | 8ns | 65 ns | 11A | 30V | 30V | 1W Ta | P-Channel | 2400pF @ 10V | 10mOhm @ 5.5A, 10V | 2V @ 500μA | 11A Ta | 56nC @ 10V | 10 mΩ | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||
| TK4P60DB(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.53 |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 3.7A | 30V | 600V | 80W Tc | N-Channel | 540pF @ 25V | 2 Ω @ 1.9A, 10V | 4.4V @ 1mA | 3.7A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| TPC6010-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | 2.4ns | 3.2 ns | 6.1A | 20V | 60V | 700mW Ta | N-Channel | 830pF @ 10V | 59m Ω @ 3.1A, 10V | 2.3V @ 100μA | 6.1A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| TPC8A06-H(TE12LQM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 1.8nF | 2.4ns | 3.5 ns | 12A | 20V | 30V | N-Channel | 1800pF @ 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 12A Ta | 19nC @ 10V | Schottky Diode (Body) | 10.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| TPCC8065-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 2ns | 2.1 ns | 13A | 20V | 30V | 700mW Ta 18W Tc | N-Channel | 1350pF @ 10V | 11.4m Ω @ 6.5A, 10V | 2.3V @ 200μA | 13A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| TPC6012(TE85L,F,M) | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | VS-6 (2.9x2.8) | 630pF | 5ns | 10 ns | 6A | 12V | 20V | 700mW Ta | N-Channel | 630pF @ 10V | 20mOhm @ 3A, 4.5V | 1.2V @ 200μA | 6A Ta | 9nC @ 5V | 20 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||
| TPC6009-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2ns | 1.7 ns | 5.3A | 20V | 40V | 700mW Ta | N-Channel | 290pF @ 10V | 81m Ω @ 2.7A, 10V | 2.3V @ 100μA | 5.3A Ta | 4.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| TK4A65DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.99 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 3.5A | 30V | 650V | 35W Tc | N-Channel | 600pF @ 25V | 1.9Ohm @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 12nC @ 10V | 1.9 Ω | 10V | ±30V | |||||||||||||||||||||||
| TK4P55DA(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | D-Pak | 380pF | 15ns | 7 ns | 3.5A | 30V | 550V | 80W Tc | N-Channel | 380pF @ 25V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 9nC @ 10V | 2.45 Ω | 10V | ±30V | |||||||||||||||||||||||
| TK50E10K3(S1SS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 12 Weeks | TO-220-3 | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK50E06K3A,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | No | 104W | 104W | 1 | TO-220-3 | 50A | 60V | N-Channel | 8.5mOhm @ 25A, 10V | 50A Tc | 54nC @ 10V | 8.5 mΩ | |||||||||||||||||||||||||||||||||
| TPC6008-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.4ns | 2 ns | 5.9A | 20V | 30V | 700mW Ta | N-Channel | 300pF @ 10V | 60m Ω @ 3A, 10V | 2.3V @ 100μA | 5.9A Ta | 4.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| TPCC8009,LQ(O | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 30V | N-Channel | 1270pF @ 10V | 7m Ω @ 12A, 10V | 3V @ 200μA | 24A Ta | 26nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| TPC8A05-H(TE12L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 1.7nF | 2ns | 2.5 ns | 10A | 20V | 30V | 1W Ta | N-Channel | 1700pF @ 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 10A Ta | 15nC @ 10V | Schottky Diode (Body) | 13.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||
| TK4P60DA(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 3.5A | 30V | 600V | 80W Tc | N-Channel | 490pF @ 25V | 2.2 Ω @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| TK50E08K3,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 104W | TO-220-3 | 50A | 75V | N-Channel | 12mOhm @ 25A, 10V | 50A Tc | 55nC @ 10V | 12 mΩ | |||||||||||||||||||||||||||||||||||||
| TK16A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $10.98 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 16A | 450V | N-Channel | 270mOhm @ 8A, 10V | 16A | 270 mΩ | ||||||||||||||||||||||||||||||||||||
| TPCC8066-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 5 | 12 Weeks | 8 | EAR99 | No | DUAL | FLAT | 1 | S-PDSO-F5 | 2.1ns | 2.3 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 700mW Ta 17W Tc | 0.019Ohm | N-Channel | 1100pF @ 10V | 15m Ω @ 5.5A, 10V | 2.3V @ 100μA | 11A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||
| TK50E06K3(S1SS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2016 | TO-220-3 | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||
| TPC6011(TE85L,F,M) | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | VS-6 (2.9x2.8) | 640pF | 5.8ns | 8 ns | 6A | 20V | 30V | 700mW Ta | N-Channel | 640pF @ 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 6A Ta | 14nC @ 10V | 20 mΩ | 4.5V 10V | ±20V |
