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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Factory Lead Time | Resistance | Number of Pins | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Configuration | Drain to Source Voltage (Vdss) | Power Dissipation-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SK3868(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3868qm-datasheets-3710.pdf | TO-220-3 Full Pack | 5A | 500V | 35W Tc | N-Channel | 550pF @ 25V | 1.7 Ω @ 2.5A, 10V | 4V @ 1mA | 5A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TPC8035-H(TE12L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 1.9W | 8-SOP (5.5x6.0) | 7.8nF | 5.1ns | 11 ns | 18A | 20V | 30V | 1W Ta | 3.2mOhm | 30V | N-Channel | 7800pF @ 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 18A Ta | 82nC @ 10V | 3.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||
| 2SK3466(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3466te24lq-datasheets-3727.pdf | SC-97 | 5A | 500V | 50W Tc | N-Channel | 780pF @ 10V | 1.5 Ω @ 5A, 10V | 4V @ 1mA | 5A Ta | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| 2SK3403(Q) | Toshiba Semiconductor and Storage | $0.56 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3403q-datasheets-3744.pdf | TO-220-3, Short Tab | Lead Free | 3 | No | Single | 100W | 1 | 28ns | 10 ns | 13A | 30V | 100W Tc | 450V | N-Channel | 1600pF @ 25V | 400m Ω @ 6A, 10V | 5V @ 1mA | 13A Ta | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| TPCA8048-H(TE12L,Q | Toshiba Semiconductor and Storage | $1.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | EAR99 | No | 2.8W | 1 | FET General Purpose Power | 3.6ns | 7.3 ns | 35A | 20V | Single | 60V | 1.6W Ta 45W Tc | N-Channel | 7540pF @ 10V | 6.6m Ω @ 18A, 10V | 2.3V @ 1mA | 35A Ta | 90nC @ 10V | |||||||||||||||||||||||||
| 2SK4021(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk4021q-datasheets-3958.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 3 | No | Single | 15ns | 15 ns | 4.5A | 20V | 250V | 20W Tc | N-Channel | 440pF @ 10V | 1 Ω @ 2.5A, 10V | 3.5V @ 1mA | 4.5A Ta | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| 2SK3388(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3388te24lq-datasheets-4265.pdf | SC-97 | FET General Purpose Power | 20A | Single | 250V | 125W Tc | N-Channel | 4000pF @ 10V | 105m Ω @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| 2SK3844(Q) | Toshiba Semiconductor and Storage | $7.91 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3844q-datasheets-4443.pdf | TO-220-3 Full Pack | 10mm | 4.5mm | 8.1mm | Lead Free | 3 | Single | 450W | 1 | 80ns | 104 ns | 104 ns | 45A | 20V | 45W Tc | 60V | N-Channel | 12400pF @ 10V | 5.8m Ω @ 23A, 10V | 4V @ 1mA | 45A Ta | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| 2SK2995(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2995f-datasheets-6490.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 90W | 1 | 30A | 250V | 90W Tc | N-Channel | 5400pF @ 10V | 68m Ω @ 15A, 10V | 3.5V @ 1mA | 30A Ta | 132nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| 2SK2847(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2847f-datasheets-6492.pdf | TO-3P-3, SC-65-3 | 15.9mm | 20mm | 4.8mm | Lead Free | 3 | No | Single | 85W | 1 | 60 ns | 25ns | 20 ns | 30 ns | 8A | 30V | 85W Tc | 900V | N-Channel | 2040pF @ 25V | 1.4 Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| 2SK2719(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2719f-datasheets-6494.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 125W | 1 | 15ns | 30 ns | 3A | 30V | 900V | 125W Tc | N-Channel | 750pF @ 25V | 4.3 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| 2SK3127(TE24L,Q) | Toshiba Semiconductor and Storage | $8.69 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3127te24lq-datasheets-6496.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12mOhm | Single | 65W | TO-220SM | 2.3nF | 12ns | 75 ns | 45A | 30V | 30V | 65W Tc | 12mOhm | 30V | N-Channel | 2300pF @ 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 45A Ta | 66nC @ 10V | 12 mΩ | 10V | ±20V | |||||||||||||||||||||||
| 2SK2967(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 150W | 1 | 30A | 250V | 150W Tc | N-Channel | 5400pF @ 10V | 68m Ω @ 15A, 10V | 3.5V @ 1mA | 30A Ta | 132nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| 2SK3132(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3132q-datasheets-6504.pdf | TO-3PL | Lead Free | 3 | No | Single | 250W | 1 | 160ns | 245 ns | 65 ns | 50A | 30V | 250W Tc | 500V | N-Channel | 11000pF @ 10V | 95m Ω @ 25A, 10V | 3.4V @ 1mA | 50A Ta | 280nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| 2SK2993(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2993te24lq-datasheets-6507.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 250V | 100W Tc | N-Channel | 4000pF @ 10V | 105m Ω @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2SK2917(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2917f-datasheets-6512.pdf | TO-3P-3, SC-65-3 | 500V | 90W Tc | N-Channel | 3720pF @ 10V | 270m Ω @ 10A, 10V | 4V @ 1mA | 18A Ta | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| 2SK2916(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2916f-datasheets-6586.pdf | TO-3P-3, SC-65-3 | 3 | Single | 80W | 1 | TO-3P(N)IS | 2.6nF | 106ns | 89 ns | 108 ns | 14A | 30V | 500V | 80W Tc | 400mOhm | 500V | N-Channel | 2600pF @ 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 14A Ta | 58nC @ 10V | 400 mΩ | 10V | ±30V | ||||||||||||||||||||
| 2SK3565(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | Copper, Silver, Tin | No | TO-220SIS | 1.15nF | 30ns | 60 ns | 5A | 30V | 900V | 45W Tc | N-Channel | 1150pF @ 25V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 5A Ta | 28nC @ 10V | 2.5 Ω | 10V | ±30V | ||||||||||||||||||||||
| 2SK3068(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3068te24lq-datasheets-6763.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 500V | 100W Tc | N-Channel | 2040pF @ 10V | 520m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TPC8021-H(TE12LQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8021hte12lqm-datasheets-0825.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 1.9W | 8-SOP (5.5x6.0) | 640pF | 4ns | 4 ns | 11A | 20V | 30V | 1W Ta | 17mOhm | 30V | N-Channel | 640pF @ 10V | 17mOhm @ 5.5A, 10V | 2.3V @ 1mA | 11A Ta | 11nC @ 10V | 17 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||
| TPC8014(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8014te12lqm-datasheets-0849.pdf | 8-SOIC (0.173, 4.40mm Width) | 14mOhm | 8 | Single | 1W | 8-SOP (5.5x6.0) | 1.86nF | 19ns | 69 ns | 20 ns | 11A | 30V | 1W Ta | 22mOhm | 30V | N-Channel | 1860pF @ 10V | 14mOhm @ 5.5A, 10V | 2.5V @ 1mA | 11A Ta | 39nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||
| 2SK3309(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3309te24lq-datasheets-0851.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM | 450V | 65W Tc | N-Channel | 920pF @ 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 10A Ta | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| 2SK2266(TE24R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2266te24rq-datasheets-0885.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | 65W Tc | N-Channel | 1800pF @ 10V | 30m Ω @ 25A, 10V | 2V @ 1mA | 45A Ta | 60nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK55D10J1(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk55d10j1q-datasheets-0887.pdf | TO-220-3 | Lead Free | Single | 140W | TO-220(W) | 5.7nF | 7ns | 20 ns | 55A | 20V | 100V | 140W Tc | 10.5mOhm | 100V | N-Channel | 5700pF @ 10V | 10.5mOhm @ 27A, 10V | 2.3V @ 1mA | 55A Ta | 110nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||
| TK70D06J1(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk70d06j1q-datasheets-0888.pdf | TO-220-3 | Lead Free | Single | 140W | TO-220(W) | 5.45nF | 70A | 20V | 60V | 45W Tc | 5.1mOhm | 60V | N-Channel | 5450pF @ 10V | 6.4mOhm @ 35A, 10V | 2.3V @ 1mA | 70A Ta | 87nC @ 10V | 6.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| TK12A60U(Q,M) | Toshiba Semiconductor and Storage | $0.65 |
Min: 1 Mult: 1 |
download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | Single | 35W | TO-220SIS | 720pF | 30ns | 8 ns | 12A | 30V | 600V | 35W Tc | 400mOhm | 600V | N-Channel | 720pF @ 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 12A Ta | 14nC @ 10V | 400 mΩ | 10V | ±30V | ||||||||||||||||||
| TPC8A02-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8a02hte12lq-datasheets-0891.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | unknown | 1.9W | 6ns | 12 ns | 16A | 20V | 1W Ta | 30V | N-Channel | 1970pF @ 10V | 5.6m Ω @ 8A, 10V | 2.3V @ 1mA | 16A Ta | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| TPC8038-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSV-H | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | unknown | 30V | N-Channel | 2150pF @ 10V | 11.4m Ω @ 6A, 10V | 2.5V @ 1mA | 12A Ta | 21nC @ 10V | |||||||||||||||||||||||||||||||||||||||
| TPCA8008-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8008hte12lq-datasheets-9781.pdf | 8-PowerVDFN | 8 | No | 45W | 8ns | 13 ns | 4A | 20V | 1.6W Ta 45W Tc | 250V | N-Channel | 600pF @ 10V | 580m Ω @ 2A, 10V | 4V @ 1mA | 4A Ta | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| TPC6107(TE85L,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Silver, Tin | No | 2.2W | VS-6 (2.9x2.8) | 680pF | 145ns | 92 ns | 142 ns | 4.5A | 12V | 20V | 700mW Ta | 55mOhm | -20V | P-Channel | 680pF @ 10V | 55mOhm @ 2.2A, 4.5V | 1.2V @ 200μA | 4.5A Ta | 9.8nC @ 5V | 55 mΩ | 2V 4.5V | ±12V |
