| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK46A08N1,S4X | Toshiba Semiconductor and Storage | $0.86 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 30 ns | 11ns | 17 ns | 51 ns | 46A | 20V | 35W Tc | 80A | 80V | N-Channel | 2500pF @ 40V | 8.4m Ω @ 23A, 10V | 4V @ 500μA | 46A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK7P60W,RVQ | Toshiba Semiconductor and Storage | $1.09 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | Single | 60W | 18ns | 7 ns | 55 ns | 7A | 30V | 60W Tc | 600V | N-Channel | 490pF @ 300V | 600m Ω @ 3.5A, 10V | 3.7V @ 350μA | 7A Ta | 15nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TK80S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage | $2.94 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 4.34nF | 13 ns | 28ns | 80 ns | 20 ns | 80A | 20V | 40V | 100W Tc | N-Channel | 4340pF @ 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 80A Ta | 87nC @ 10V | 3.1 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK6P60W,RVQ | Toshiba Semiconductor and Storage | $6.02 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | Single | 60W | 1 | 18ns | 7 ns | 55 ns | 6.2A | 30V | 60W Tc | 600V | N-Channel | 390pF @ 300V | 820m Ω @ 3.1A, 10V | 3.7V @ 310μA | 6.2A Ta | 12nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TPCA8057-H,LQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 5.2nF | 4.3ns | 6.3 ns | 42A | 20V | 30V | 1.6W Ta 57W Tc | N-Channel | 5200pF @ 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500μA | 42A Ta | 61nC @ 10V | 2.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPCA8064-H,LQ(CM | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 1.9nF | 3.4ns | 5.9 ns | 20A | 20V | 30V | 1.6W Ta 32W Tc | N-Channel | 1900pF @ 10V | 8.2mOhm @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 23nC @ 10V | 8.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK5A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.11 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 18ns | 7 ns | 4.5A | 30V | 450V | 30W Tc | N-Channel | 380pF @ 25V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 4.5A Ta | 9nC @ 10V | 1.75 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TPCA8062-H,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 2.9nF | 2.8ns | 9.5 ns | 28A | 20V | 30V | 1.6W Ta 42W Tc | N-Channel | 2900pF @ 10V | 5.6mOhm @ 14A, 10V | 2.3V @ 300μA | 28A Ta | 34nC @ 10V | 5.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK4A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.89 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | 18ns | 8 ns | 4A | 30V | 600V | 35W Tc | N-Channel | 600pF @ 25V | 1.7 Ω @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 100ns | 250 ns | 60A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 100W Tc | 120A | 0.0145Ohm | P-Channel | 7760pF @ 10V | 11.2m Ω @ 30A, 10V | 3V @ 1mA | 60A Ta | 156nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||
| TJ80S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $0.88 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 100ns | 300 ns | 80A | 10V | 40V | 100W Tc | P-Channel | 7770pF @ 10V | 5.2m Ω @ 40A, 10V | 3V @ 1mA | 80A Ta | 158nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||
| TK5Q65W,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-251-3 Stub Leads, IPak | 16 Weeks | 5.2A | 650V | 60W Tc | N-Channel | 380pF @ 300V | 1.22 Ω @ 2.6A, 10V | 3.5V @ 170μA | 5.2A Ta | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12P60W,RVQ | Toshiba Semiconductor and Storage | $0.66 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | DPAK | 890pF | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 600V | 100W Tc | 340mOhm | N-Channel | 890pF @ 300V | 340mOhm @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 340 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK25E06K3,S1X(S | Toshiba Semiconductor and Storage | $3.75 |
Min: 1 Mult: 1 |
download | U-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 60W | TO-220-3 | 25A | 60V | 60W Tc | 14Ohm | 60V | N-Channel | 18mOhm @ 12.5A, 10V | 25A Ta | 29nC @ 10V | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK80S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 4.2nF | 13ns | 17 ns | 80A | 20V | 60V | 100W Tc | N-Channel | 4200pF @ 10V | 5.5mOhm @ 40A, 10V | 3V @ 1mA | 80A Ta | 85nC @ 10V | 5.5 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK35E08N1,S1X | Toshiba Semiconductor and Storage | $5.96 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-tk35e08n1s1x-datasheets-8328.pdf | TO-220-3 | 12 Weeks | 55A | 80V | 72W Tc | N-Channel | 1700pF @ 40V | 12.2m Ω @ 17.5A, 10V | 4V @ 300μA | 55A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.93 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | TO-220SIS | 490pF | 18ns | 8 ns | 5.5A | 30V | 450V | N-Channel | 490pF @ 25V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 5.5A Ta | 11nC @ 10V | 1.35 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK5A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 35W | TO-220SIS | 490pF | 18ns | 8 ns | 5A | 30V | 500V | 35W Tc | 1.5Ohm | 500V | N-Channel | 490pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK10A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | 3 | No | Single | 45W | TO-220SIS | 1.35nF | 55ns | 100 ns | 15 ns | 10A | 30V | 600V | 45W Tc | 750mOhm | 600V | N-Channel | 1350pF @ 25V | 750mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 25nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TK3A60DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.03 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 2.5A | 30V | 600V | 30W Tc | N-Channel | 380pF @ 25V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 2.5A Ta | 9nC @ 10V | 2.8 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK8P60W,RVQ | Toshiba Semiconductor and Storage | $1.65 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | Single | DPAK | 570pF | 20ns | 5.5 ns | 70 ns | 8A | 30V | 600V | 80W Tc | 420mOhm | 600V | N-Channel | 570pF @ 300V | 500mOhm @ 4A, 10V | 3.7V @ 400μA | 8A Ta | 18.5nC @ 10V | Super Junction | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK12V60W,LVQ | Toshiba Semiconductor and Storage | $3.80 |
Min: 1 Mult: 1 |
download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | 4-DFN-EP (8x8) | 890pF | 45 ns | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 600V | 104W Tc | 300mOhm | 600V | N-Channel | 890pF @ 300V | 300mOhm @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| 2SK2963(TE12L,F) | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2963te12lf-datasheets-5493.pdf | 100V | 1A | TO-243AA | 4.6mm | 1.6mm | 2.5mm | Lead Free | 3 | Copper, Silver, Tin | No | Single | 1.5W | 1 | 13 ns | 8ns | 45 ns | 175 ns | 1A | 20V | 500mW Ta | 100V | N-Channel | 140pF @ 10V | 700m Ω @ 500mA, 10V | 2V @ 1mA | 1A Ta | 6.3nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2SK2231(TE16R1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 60V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Silver, Tin | No | Single | 20W | 1 | PW-MOLD | 370pF | 55ns | 65 ns | 95 ns | 5A | 20V | 60V | 20W Tc | 160mOhm | 60V | N-Channel | 370pF @ 10V | 160mOhm @ 2.5A, 10V | 2V @ 1mA | 5A Ta | 12nC @ 10V | 160 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||
| TPCA8008-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8008hte12lq-datasheets-9781.pdf | 250V | 4A | 8-PowerVDFN | Lead Free | 8 | 8-SOP Advance (5x5) | 600pF | 8ns | 4A | 250V | 1.6W Ta 45W Tc | N-Channel | 600pF @ 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 4A Ta | 10nC @ 10V | 580 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPCA8007-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8007hte12lq-datasheets-9789.pdf | SOP | 8 | 45W | 450W | 1nF | 94ns | 80 ns | 100 ns | 20A | 20V | 100V | 47mOhm | 100V | 47 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8010-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | unknown | YES | FET General Purpose Power | Single | 200V | 1.6W Ta 45W Tc | 5.5A | N-Channel | 600pF @ 10V | 450m Ω @ 2.7A, 10V | 4V @ 1mA | 5.5A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8009-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8009hte12lq-datasheets-9763.pdf | 150V | 7A | 8-PowerVDFN | Lead Free | 8 | unknown | 7ns | 7A | 1.6W Ta 45W Tc | N-Channel | 600pF @ 10V | 350m Ω @ 3.5A, 10V | 4V @ 1mA | 7A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8016-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8016hte12lqm-datasheets-9839.pdf | 8-PowerVDFN | 8 | 45W | 45W | 1 | 8-SOP Advance (5x5) | 1.375nF | 4ns | 3 ns | 25A | 20V | 60V | 21mOhm | 60V | N-Channel | 1375pF @ 10V | 21mOhm @ 13A, 10V | 2.3V @ 1mA | 25A Ta | 22nC @ 10V | 21 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| 2SK3128(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3128q-datasheets-3368.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | Single | 150W | TO-3P(N) | 2.3nF | 12ns | 75 ns | 60A | 20V | 30V | 150W Tc | 12mOhm | 30V | N-Channel | 2300pF @ 10V | 12mOhm @ 30A, 10V | 3V @ 1mA | 60A Ta | 66nC @ 10V | 12 mΩ | 10V | ±20V |
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