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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| SIA929DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia929djt1ge3-datasheets-5811.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 1 | Other Transistors | 5 ns | 10ns | 10 ns | 22 ns | 4.3A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | -30V | 2 P-Channel (Dual) | 575pF @ 15V | 64m Ω @ 3A, 10V | 1.1V @ 250μA | 4.5A Tc | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIA975DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia975djt1ge3-datasheets-5566.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 41mOhm | 6 | EAR99 | Tin | No | 7.8W | SIA975 | 6 | Dual | 1.9W | 2 | Other Transistors | 22 ns | 22ns | 15 ns | 32 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -400mV | -12V | 2 P-Channel (Dual) | 1500pF @ 6V | 41m Ω @ 4.3A, 4.5V | 1V @ 250μA | 26nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| DMN4031SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn4031ssd13-datasheets-5807.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 15 Weeks | 73.992255mg | No SVHC | 31mOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.42W | GULL WING | 260 | DMN4031 | 8 | Dual | 40 | 2.6W | 2 | FET General Purpose Power | 6.4 ns | 9.7ns | 3.1 ns | 19.8 ns | 5.2A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 7A | 40V | 2 N-Channel (Dual) | 945pF @ 20V | 31m Ω @ 6A, 10V | 3V @ 250μA | 18.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SH8K25GZ0TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8k25gz0tb-datasheets-5571.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 8A | 0.085Ohm | 0.48 mJ | 2 N-Channel (Dual) | 100pF @ 10V | 85m Ω @ 5.2A, 10V | 2.5V @ 1mA | 5.2A Ta | 1.7nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2023UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2023ucb47-datasheets-5556.pdf | 4-XFBGA, WLBGA | 2.564nF | 8 Weeks | 4 | EAR99 | 1.45W | NOT SPECIFIED | 1 | NOT SPECIFIED | 10 ns | 20ns | 29 ns | 75 ns | 6A | 12V | 24V | 27mOhm | 2 N-Channel (Dual) Common Drain | 3333pF @ 10V | 1.3V @ 1mA | 6A Ta | 37nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC8602 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc8602-datasheets-5222.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 35 Weeks | 36mg | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | 690mW | GULL WING | Dual | 690mW | 2 | FET General Purpose Power | 150°C | 3.5 ns | 1.7ns | 2.3 ns | 5.4 ns | 1.2A | 20V | SILICON | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 3.2V | MO-193AA | 0.35Ohm | 5 pF | 100V | 2 N-Channel (Dual) | 70pF @ 50V | 350m Ω @ 1.2A, 10V | 4V @ 250μA | 2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| US6J12TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 6-SMD, Flat Leads | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 12V | 910mW Ta | 2 P-Channel (Dual) | 850pF @ 6V | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 2A Ta | 7.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9933CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9933cdyt1ge3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58MOhm | 8 | yes | EAR99 | Tin | No | 470mW | GULL WING | 260 | SI9933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 21 ns | 50ns | 13 ns | 29 ns | -4A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 3.1W | 4A | -20V | 2 P-Channel (Dual) | 665pF @ 10V | 58m Ω @ 4.8A, 4.5V | 1.4V @ 250μA | 4A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| DMC4029SK4-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmc4029sk413-datasheets-5642.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | 1.5W | NOT SPECIFIED | NOT SPECIFIED | 8.3A | 40V | 1.5W | N and P-Channel Complementary | 1060pF @ 20V | 24m Ω @ 6A, 10V | 3V @ 250μA | 19.1nC @ 20V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8MA2GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8ma2gzetb-datasheets-5645.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W Ta | 12A | 0.08Ohm | 1.1 mJ | N and P-Channel | 125pF 305pF @ 15V | 80m Ω @ 4.5A, 10V, 82m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 3nC, 6.7nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH8KA1TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | 8 | 20 Weeks | EAR99 | not_compliant | YES | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.4W | 12A | 0.073Ohm | 0.65 mJ | 2 N-Channel (Dual) | 125pf @ 15V | 73m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A | 3nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS6J1TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-qs6j1tr-datasheets-5577.pdf | -20V | -1.5A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 340MOhm | 5 | yes | EAR99 | No | e1 | 1.25W | GULL WING | 260 | *J1 | 6 | Dual | 10 | 1.25W | 2 | Other Transistors | R-PDSO-G6 | 10 ns | 12ns | 12 ns | 45 ns | 1.5A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -2V | 6A | -20V | 2 P-Channel (Dual) | 270pF @ 10V | 215m Ω @ 1.5A, 4.5V | 2V @ 1mA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| FDS9926A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fds9926a-datasheets-5681.pdf | 20V | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 8 ns | 9ns | 4 ns | 15 ns | 6.5A | 10V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 900mW | 0.03Ohm | 20V | 2 N-Channel (Dual) | 650pF @ 10V | 1 V | 30m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI1900DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | /files/vishaysiliconix-si1900dlt1e3-datasheets-4332.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 0.3W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 300mW 270mW | 0.59A | 0.48Ohm | 2 N-Channel (Dual) | 480m Ω @ 590mA, 10V | 3V @ 250μA | 630mA Ta 590mA Ta | 1.4nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8DN6LF6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stl8dn6lf6ag-datasheets-5452.pdf | 8-PowerVDFN | 20 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 55W | NOT SPECIFIED | STL8 | NOT SPECIFIED | 1.34nF | 32A | 60V | 2 N-Channel (Dual) | 27m Ω @ 9.6A, 10V | 2.5V @ 250μA | 32A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6926ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si6926adqt1e3-datasheets-4790.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 830mW | GULL WING | 260 | SI6926 | 8 | Dual | 40 | 830mW | 2 | FET General Purpose Powers | 6 ns | 16ns | 16 ns | 46 ns | 4.5A | 8V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 4.1A | 2 N-Channel (Dual) | 30m Ω @ 4.5A, 4.5V | 1V @ 250μA | 4.1A | 10.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| BUK9K29-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9k29100e115-datasheets-5500.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | 68W | GULL WING | 8 | 2 | Dual | 68W | 2 | R-PDSO-G6 | 6.1 ns | 6.4ns | 35.1 ns | 67.3 ns | 30A | 10V | 100V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 100V | 2 N-Channel (Dual) | 3491pF @ 25V | 27m Ω @ 10A, 10V | 2.1V @ 1mA | 54nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC3A16DN8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmc3a16dn8tc-datasheets-5510.pdf | 30V | 6.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 48mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.25W | DUAL | GULL WING | 260 | 8 | 40 | 2.1W | 2 | Other Transistors | 3 ns | 6.4ns | 9.4 ns | 21.6 ns | 4.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.9A | 30V | N and P-Channel | 796pF @ 25V | 35m Ω @ 9A, 10V | 1V @ 250μA (Min) | 4.9A 4.1A | 17.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| QH8K22TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-qh8k22tcr-datasheets-5551.pdf | 8-SMD, Flat Lead | 8 | 16 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 1.1W Ta | 18A | 0.046Ohm | 1.6 mJ | 2 N-Channel (Dual) | 195pF @ 20V | 46m Ω @ 6.5A, 10V | 2.5V @ 10μA | 6.5A Ta | 2.6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDME1024NZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fdme1024nzt-datasheets-4973.pdf | 6-UFDFN Exposed Pad | 1.6mm | 500μm | 1.6mm | 6 | 16 Weeks | 25.2mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTION | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | Dual | 1.3W | 2 | FET General Purpose Power | 4.5 ns | 2ns | 1.7 ns | 15 ns | 3.8A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 700mV | 600mW | 3.4A | 40 pF | 20V | 2 N-Channel (Dual) | 300pF @ 10V | 66m Ω @ 3.4A, 4.5V | 1V @ 250μA | 4.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| ZXMHC3F381N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmhc3f381n8tc-datasheets-5264.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 55mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 870mW | DUAL | GULL WING | 260 | ZXMHC3F381 | 8 | 40 | 1.35W | 4 | Other Transistors | 1.9 ns | 3ns | 21 ns | 30 ns | 3.36A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | -30V | 2 N and 2 P-Channel (H-Bridge) | 430pF @ 15V | 33m Ω @ 5A, 10V | 3V @ 250μA | 3.98A 3.36A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| FDMC8030 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdmc8030-datasheets-4982.pdf | 8-PowerWDFN | 3mm | 800μm | 3mm | 8 | 7 Weeks | 196mg | 8 | ACTIVE (Last Updated: 3 hours ago) | yes | EAR99 | AVALANCHE RATED | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 800mW | 2 | Dual | 1.9W | 1 | 150°C | 7 ns | 3ns | 3 ns | 19 ns | 12A | 12V | SILICON | DRAIN SOURCE | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 50A | 30 pF | 40V | 2 N-Channel (Dual) | 1975pF @ 20V | 10m Ω @ 12A, 10V | 2.8V @ 250μA | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2.4W | GULL WING | 260 | SI4946 | 8 | 2 | Dual | 40 | 2.4W | 2 | 175°C | 10 ns | 12ns | 10 ns | 25 ns | 6.5A | 20V | SILICON | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 3.7W | 5.3A | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| IRF7341TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7341trpbf-datasheets-5055.pdf | 55V | 4.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 50mOhm | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | 2W | GULL WING | 260 | IRF7341PBF | 2 | Dual | 30 | 2W | 2 | FET General Purpose Power | 150°C | 8.3 ns | 3.2ns | 13 ns | 32 ns | 4.7A | 20V | 55V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 90 ns | 5.1A | 140 mJ | 55V | 2 N-Channel (Dual) | 740pF @ 25V | 1 V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 36nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI4922BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 16mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 3.1W | 8A | 30V | 2 N-Channel (Dual) | 2070pF @ 15V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| NVMFD5C462NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c462nlt1g-datasheets-5481.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 50W | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3W Ta 50W Tc | 311A | 0.0077Ohm | 174 mJ | 2 N-Channel (Dual) | 1300pF @ 25V | 4.7m Ω @ 10A, 10V | 2.2V @ 40μA | 18A Ta 84A Tc | 11nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K12-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k1260ex-datasheets-5489.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | AEC-Q101; IEC-60134 | 68W | GULL WING | 8 | 2 | R-PDSO-G6 | 35A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 68W | 204A | 0.0115Ohm | 118 mJ | 2 N-Channel (Dual) | 3470pF @ 25V | 10.7m Ω @ 15A, 10V | 2.1V @ 1mA | 24.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6875 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6875-datasheets-5249.pdf | -20V | -6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 30mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 8 ns | 15ns | 35 ns | 98 ns | -6A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -800mV | 900mW | 6A | -20V | 2 P-Channel (Dual) | 2250pF @ 10V | 30m Ω @ 6A, 4.5V | 1.5V @ 250μA | 6A | 31nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4288DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4288dyt1ge3-datasheets-5505.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 8 ns | 16 ns | 7.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 40V | 2 N-Channel (Dual) | 580pF @ 20V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7329TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7329trpbf-datasheets-5288.pdf | -12V | -9.2A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | No | 2W | GULL WING | IRF7329PBF | Dual | 2W | 2 | 10 ns | 8.6ns | 260 ns | 340 ns | 9.2A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 0.017Ohm | -12V | 2 P-Channel (Dual) | 3450pF @ 10V | 17m Ω @ 9.2A, 4.5V | 900mV @ 250μA | 57nC @ 4.5V | Logic Level Gate |
