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ContactSI1900DL-T1-GE3
MOSFET Dual 30V N-CH TRENCH
- Manufacturer: Vishay Siliconix
- NO: 880-SI1900DL-T1-GE3
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 5582
- Description: MOSFET Dual 30V N-CH TRENCH(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 300mW 270mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 480m Ω @ 590mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 630mA Ta 590mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain Current-Max (Abs) (ID) | 0.59A |
| Drain-source On Resistance-Max | 0.48Ohm |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.3W |
| FET Feature | Standard |
| RoHS Status | Non-RoHS Compliant |
