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ContactFDC8602
FDC8602 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC8602
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 6752
- Description: FDC8602 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 35 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 690mW |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 690mW |
| Turn On Delay Time | 3.5 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| Rise Time | 1.7ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 2.3 ns |
| Turn-Off Delay Time | 5.4 ns |
| Continuous Drain Current (ID) | 1.2A |
| Threshold Voltage | 3.2V |
| JEDEC-95 Code | MO-193AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.35Ohm |
| Drain to Source Breakdown Voltage | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Standard |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDC8602 Description
The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.
FDC8602 Features
Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC8602 Applications
Distribution
