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FDME1024NZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDME1024NZT
- Package: 6-UFDFN Exposed Pad
- Datasheet:
- Stock: 4902
- Description: FDME1024NZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 25.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | ESD PROTECTION |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.4W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.5 ns |
| Power - Max | 600mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 66m Ω @ 3.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| Rise Time | 2ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 1.7 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 3.8A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 40 pF |
| Height | 500μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
FDME1024NZT Description
The device is a single package solution designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-state resistance to achieve minimum on-loss.
FDME1024NZT Applications
Baseband Switch
Load Switch
FDME1024NZT Features
Max rps(on)=66mΩ at Vs=4.5Vlo=3.4A
Max rps(on)=86 mΩat VGs=2.5VIo=2.9 A
Max ros(on)=113 mΩ at VGs=1.8Vp=2.5A Max rpsion)=160mΩat VGs=1.5V1o=2.1 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level>1600 V(Note 3)
RoHS Compliant
