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IRF7329TRPBF
  • IRF7329TRPBF

IRF7329TRPBF

IRF7329TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7329TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 5172
  • Description: IRF7329TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Voltage - Rated DC -12V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -9.2A
Base Part Number IRF7329PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 260 ns
Turn-Off Delay Time 340 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.017Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7329TRPBF            Description

 

 Intrative Rectifier's new P-channel HEXFET power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with the well-known rugged device design of HEXFET Power MOSFET, provides designers with an extremely efficient and reliable device for use in a variety of applications.Over the years, SO-8 has been improved through customized thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to greatly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology.


IRF7329TRPBF            Features

 Trench Technology

 Ultra Low On-Resistance

 Dual P-Channel MOSFET

 Low Profile (<1.8mm)

 Available in Tape & Reel

 Lead-Free

 

IRF7329TRPBF               Applications

making it an ideal choice for a variety of power applications

 

 



 



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