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NVMFD5C462NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVMFD5C462NLT1G
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 2168
- Description: NVMFD5C462NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 48 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 3W Ta 50W Tc |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 4.7m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18A Ta 84A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 0.0077Ohm |
| Pulsed Drain Current-Max (IDM) | 311A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 174 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 50W |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
NVMFD5C462NLT1G Description
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NVMFD5C462NLT1G Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C462NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NVMFD5C462NLT1G Applications
DC-DC converters
system voltage rails
load points
